{"id":"https://openalex.org/W4390843626","doi":"https://doi.org/10.1016/j.mejo.2024.106100","title":"Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components","display_name":"Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components","publication_year":2024,"publication_date":"2024-01-13","ids":{"openalex":"https://openalex.org/W4390843626","doi":"https://doi.org/10.1016/j.mejo.2024.106100"},"language":"en","primary_location":{"id":"doi:10.1016/j.mejo.2024.106100","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2024.106100","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"K. Manikanta","orcid":null},"institutions":[{"id":"https://openalex.org/I4210131147","display_name":"SRM University","ror":"https://ror.org/037skf023","country_code":"IN","type":"education","lineage":["https://openalex.org/I145286018","https://openalex.org/I4210131147"]},{"id":"https://openalex.org/I4401726783","display_name":"VIT-AP University","ror":"https://ror.org/007v4hf75","country_code":null,"type":"education","lineage":["https://openalex.org/I4401726783"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"K. Manikanta","raw_affiliation_strings":["School of Electronics Engineering, VIT-AP University, Inavolu, beside AP Secretariat, Amaravati Andhra Pradesh, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering, VIT-AP University, Inavolu, beside AP Secretariat, Amaravati Andhra Pradesh, India","institution_ids":["https://openalex.org/I4210131147","https://openalex.org/I4401726783"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029155856","display_name":"Umakanta Nanda","orcid":"https://orcid.org/0000-0003-4746-5297"},"institutions":[{"id":"https://openalex.org/I4210131147","display_name":"SRM University","ror":"https://ror.org/037skf023","country_code":"IN","type":"education","lineage":["https://openalex.org/I145286018","https://openalex.org/I4210131147"]},{"id":"https://openalex.org/I4401726783","display_name":"VIT-AP University","ror":"https://ror.org/007v4hf75","country_code":null,"type":"education","lineage":["https://openalex.org/I4401726783"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Umakanta Nanda","raw_affiliation_strings":["School of Electronics Engineering, VIT-AP University, Inavolu, beside AP Secretariat, Amaravati Andhra Pradesh, India"],"raw_orcid":"https://orcid.org/0000-0003-4746-5297","affiliations":[{"raw_affiliation_string":"School of Electronics Engineering, VIT-AP University, Inavolu, beside AP Secretariat, Amaravati Andhra Pradesh, India","institution_ids":["https://openalex.org/I4210131147","https://openalex.org/I4401726783"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5015664010","display_name":"Chandan Kumar Pandey","orcid":"https://orcid.org/0000-0002-6177-6430"},"institutions":[{"id":"https://openalex.org/I4210131147","display_name":"SRM University","ror":"https://ror.org/037skf023","country_code":"IN","type":"education","lineage":["https://openalex.org/I145286018","https://openalex.org/I4210131147"]},{"id":"https://openalex.org/I4401726783","display_name":"VIT-AP University","ror":"https://ror.org/007v4hf75","country_code":null,"type":"education","lineage":["https://openalex.org/I4401726783"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Chandan Kumar Pandey","raw_affiliation_strings":["School of Electronics Engineering, VIT-AP University, Inavolu, beside AP Secretariat, Amaravati Andhra Pradesh, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering, VIT-AP University, Inavolu, beside AP Secretariat, Amaravati Andhra Pradesh, India","institution_ids":["https://openalex.org/I4210131147","https://openalex.org/I4401726783"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5029155856"],"corresponding_institution_ids":["https://openalex.org/I4210131147","https://openalex.org/I4401726783"],"apc_list":{"value":2370,"currency":"USD","value_usd":2370},"apc_paid":null,"fwci":2.077,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.86600733,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":"144","issue":null,"first_page":"106100","last_page":"106100"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.8283078670501709},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.550428032875061},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5202397108078003},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.49973225593566895},{"id":"https://openalex.org/keywords/tunnel-field-effect-transistor","display_name":"Tunnel field-effect transistor","score":0.49639755487442017},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4808295965194702},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4518834352493286},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.44601136445999146},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4020848572254181},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.33661872148513794},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24341914057731628},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18660089373588562},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.12417441606521606}],"concepts":[{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.8283078670501709},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.550428032875061},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5202397108078003},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.49973225593566895},{"id":"https://openalex.org/C2775945429","wikidata":"https://www.wikidata.org/wiki/Q17139821","display_name":"Tunnel field-effect transistor","level":5,"score":0.49639755487442017},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4808295965194702},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4518834352493286},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.44601136445999146},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4020848572254181},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33661872148513794},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24341914057731628},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18660089373588562},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.12417441606521606}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.mejo.2024.106100","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2024.106100","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1876422086","https://openalex.org/W1966227433","https://openalex.org/W1967406701","https://openalex.org/W1975037717","https://openalex.org/W2062509156","https://openalex.org/W2062632887","https://openalex.org/W2129680670","https://openalex.org/W2133800303","https://openalex.org/W2217129587","https://openalex.org/W2305410567","https://openalex.org/W2792717068","https://openalex.org/W2800020703","https://openalex.org/W2807552231","https://openalex.org/W2915685169","https://openalex.org/W3199282169","https://openalex.org/W4235420326","https://openalex.org/W4302375843","https://openalex.org/W4308731709","https://openalex.org/W6679338773","https://openalex.org/W6751822713","https://openalex.org/W6801355808"],"related_works":["https://openalex.org/W2135546725","https://openalex.org/W1980973127","https://openalex.org/W2004610448","https://openalex.org/W2072424359","https://openalex.org/W1975037717","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236","https://openalex.org/W4380878037","https://openalex.org/W4393192750"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":5}],"updated_date":"2026-06-15T08:34:33.830935","created_date":"2025-10-10T00:00:00"}