{"id":"https://openalex.org/W2105347783","doi":"https://doi.org/10.1109/4.315209","title":"InAlAs/InGaAs HBT X-band double-balanced upconverter","display_name":"InAlAs/InGaAs HBT X-band double-balanced upconverter","publication_year":1994,"publication_date":"1994-01-01","ids":{"openalex":"https://openalex.org/W2105347783","doi":"https://doi.org/10.1109/4.315209","mag":"2105347783"},"language":"en","primary_location":{"id":"doi:10.1109/4.315209","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.315209","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5017828957","display_name":"K.W. Kobayashi","orcid":"https://orcid.org/0000-0001-6296-6845"},"institutions":[{"id":"https://openalex.org/I4210099535","display_name":"Redondo Optics (United States)","ror":"https://ror.org/00wgn9w85","country_code":"US","type":"company","lineage":["https://openalex.org/I4210099535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K.W. Kobayashi","raw_affiliation_strings":["Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","TRW Electron. & Technol. Div., Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","institution_ids":[]},{"raw_affiliation_string":"TRW Electron. & Technol. Div., Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I4210099535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101401689","display_name":"L.T. Tran","orcid":"https://orcid.org/0000-0003-2743-0425"},"institutions":[{"id":"https://openalex.org/I4210099535","display_name":"Redondo Optics (United States)","ror":"https://ror.org/00wgn9w85","country_code":"US","type":"company","lineage":["https://openalex.org/I4210099535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L.T. Tran","raw_affiliation_strings":["Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","TRW Electron. & Technol. Div., Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","institution_ids":[]},{"raw_affiliation_string":"TRW Electron. & Technol. Div., Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I4210099535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009687117","display_name":"S. Bui","orcid":null},"institutions":[{"id":"https://openalex.org/I4210099535","display_name":"Redondo Optics (United States)","ror":"https://ror.org/00wgn9w85","country_code":"US","type":"company","lineage":["https://openalex.org/I4210099535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Bui","raw_affiliation_strings":["Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","TRW Electron. & Technol. Div., Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","institution_ids":[]},{"raw_affiliation_string":"TRW Electron. & Technol. Div., Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I4210099535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056154826","display_name":"A.K. Oki","orcid":null},"institutions":[{"id":"https://openalex.org/I4210099535","display_name":"Redondo Optics (United States)","ror":"https://ror.org/00wgn9w85","country_code":"US","type":"company","lineage":["https://openalex.org/I4210099535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A.K. Oki","raw_affiliation_strings":["Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","TRW Electron. & Technol. Div., Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","institution_ids":[]},{"raw_affiliation_string":"TRW Electron. & Technol. Div., Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I4210099535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020929912","display_name":"D.C. Streit","orcid":null},"institutions":[{"id":"https://openalex.org/I4210099535","display_name":"Redondo Optics (United States)","ror":"https://ror.org/00wgn9w85","country_code":"US","type":"company","lineage":["https://openalex.org/I4210099535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.C. Streit","raw_affiliation_strings":["Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","TRW Electron. & Technol. Div., Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","institution_ids":[]},{"raw_affiliation_string":"TRW Electron. & Technol. Div., Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I4210099535"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5047373595","display_name":"M. Rosen","orcid":null},"institutions":[{"id":"https://openalex.org/I4210099535","display_name":"Redondo Optics (United States)","ror":"https://ror.org/00wgn9w85","country_code":"US","type":"company","lineage":["https://openalex.org/I4210099535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Rosen","raw_affiliation_strings":["Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","TRW Electron. & Technol. Div., Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Systems and Technology Division, TRW, Redondo Beach, CA, USA","institution_ids":[]},{"raw_affiliation_string":"TRW Electron. & Technol. Div., Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I4210099535"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210099535"],"apc_list":null,"apc_paid":null,"fwci":0.934,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.75283663,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"29","issue":"10","first_page":"1238","last_page":"1243"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.8983011841773987},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.705841064453125},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.6445491909980774},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5569166541099548},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.546479344367981},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5303258299827576},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.5179876089096069},{"id":"https://openalex.org/keywords/baseband","display_name":"Baseband","score":0.511099636554718},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.49469324946403503},{"id":"https://openalex.org/keywords/dbm","display_name":"dBm","score":0.47644713521003723},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.44951653480529785},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.32183313369750977},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.26944971084594727},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24012771248817444},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.18242570757865906},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.17342528700828552},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14264589548110962},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.12833374738693237}],"concepts":[{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.8983011841773987},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.705841064453125},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.6445491909980774},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5569166541099548},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.546479344367981},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5303258299827576},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.5179876089096069},{"id":"https://openalex.org/C65165936","wikidata":"https://www.wikidata.org/wiki/Q575784","display_name":"Baseband","level":3,"score":0.511099636554718},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.49469324946403503},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.47644713521003723},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.44951653480529785},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.32183313369750977},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.26944971084594727},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24012771248817444},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.18242570757865906},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.17342528700828552},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14264589548110962},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.12833374738693237}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.315209","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.315209","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8600000143051147,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2105917469","https://openalex.org/W2110688917","https://openalex.org/W2138074821","https://openalex.org/W2138303619","https://openalex.org/W2534900133","https://openalex.org/W3216225027"],"related_works":["https://openalex.org/W3044591057","https://openalex.org/W2174353780","https://openalex.org/W2467369358","https://openalex.org/W1977804317","https://openalex.org/W3172238151","https://openalex.org/W2182198657","https://openalex.org/W3043943092","https://openalex.org/W4298203396","https://openalex.org/W3145579886","https://openalex.org/W2220553444"],"abstract_inverted_index":{"We":[0],"report":[1],"on":[2],"an":[3,18,54,109],"InAlAs/InGaAs":[4,122],"HBT":[5,141],"Gilbert":[6,131],"cell":[7,26,132],"double-balanced":[8],"mixer":[9,25],"which":[10,100],"upconverts":[11],"a":[12,28,102,130],"3":[13],"GHz":[14],"IF":[15,89],"signal":[16],"to":[17,40,69,80,136],"RF":[19,62,91,110],"frequency":[20,92],"of":[21,31,57,76,105,113,129],"5-12":[22],"GHz.":[23,42,115],"The":[24,43,116],"achieves":[27,101],"conversion":[29,103],"loss":[30],"between":[32],"0.8":[33],"dB":[34,37,52,107],"and":[35,45,90,139],"2.6":[36],"from":[38],"5":[39],"12":[41],"LO-RF":[44],"IF-RF":[46],"isolations":[47],"are":[48],"better":[49],"than":[50],"30":[51],"at":[53],"LO":[55,78],"drive":[56],"+5":[58,82],"dBm":[59],"across":[60],"the":[61,71,77,88,96,125],"band.":[63],"A":[64],"pre-distortion":[65],"circuit":[66],"is":[67],"used":[68],"increase":[70],"linear":[72],"input":[73],"power":[74],"range":[75],"port":[79],"above":[81],"dBm.":[83],"Discrete":[84],"amplifiers":[85],"designed":[86],"for":[87,108],"ports":[93],"make":[94],"up":[95],"complete":[97],"upconverter":[98,117,134],"architecture":[99],"gain":[104],"40":[106],"output":[111],"bandwidth":[112],"10":[114],"chip":[118],"set":[119],"fabricated":[120],"with":[121],"HBT's":[123],"demonstrates":[124],"widest":[126],"gain-bandwidth":[127],"performance":[128],"based":[133],"compared":[135],"previous":[137],"GaAs":[138],"InP":[140],"or":[142],"Si-bipolar":[143],"IC's.>":[144]},"counts_by_year":[],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}