Scott Allen
Rintaro Fujita
Scott Allen
Recognition: capture(scene).
14:1
2024
SIGGRAPH Asia Art Gallery
https://doi.org/10.1145/3680529.3688966
conf/siggrapha/2024gallery
db/conf/siggrapha/siggrapha2024gallery.html#FujitaA24
Satyaki Ganguly
Daniel J. Lichtenwalner
Caleb Isaacson
Donald A. Gajewski
Philipp Steinmann
Ryan Foarde
Brett Hull
Sei-Hyung Ryu
Scott Allen
John W. Palmour
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.
8
2022
IRPS
https://doi.org/10.1109/IRPS48227.2022.9764608
conf/irps/2022
db/conf/irps/irps2022.html#GangulyLIGSFHRA22
Daniel J. Lichtenwalner
Brett Hull
Edward Van Brunt
Shadi Sabri
Donald A. Gajewski
Dave Grider
Scott Allen
John W. Palmour
Akin Akturk
James McGarrity
Reliability studies of SiC vertical power MOSFETs.
2
2018
IRPS
https://doi.org/10.1109/IRPS.2018.8353544
conf/irps/2018
db/conf/irps/irps2018.html#LichtenwalnerHB18
Akin Akturk
Edward Van Brunt
Ryan Foarde
Rintaro Fujita
Donald A. Gajewski
Satyaki Ganguly
Dave Grider
Brett Hull
Caleb Isaacson
Daniel J. Lichtenwalner
James McGarrity
John PalmourJohn W. Palmour
Sei-Hyung Ryu
Shadi Sabri
Philipp Steinmann