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2020 – today
- 2025
[c3]Sang-Hoon Kim, Jaehyeok Baek, Moon-Chul Choi, Daewoong Lee, Donggun An, Se-Mi Kim, Yeonggeun Song, Minkyo Shim, Sung-Yong Cho, Dongha Lee, Gun-hee Cho, Inwoo Jun, Juseop Park, TaeYoon Lee, Hwan-Chul Jung, Chanyong Lee, Gil-Young Kang, Hye-Ran Kim, Jongmyung Lee, Young Su Joo, Hyo-Jin Jung, Bokyeon Won, Ji-Hak Yu, Sangkeun Han, Yechan Hwang, Chungman Kim, Seok-Jung Kim, YoungSeok Lee, Young-Tae Kim, Myeong-O. Kim, Wonhwa Shin, Tae-Young Oh, SangJoon Hwang:
30.3 A 24Gb 42.5Gb/s GDDR7 DRAM with Low-Power WCK Distribution, an RC-Optimized Dual-Emphasis TX, and Voltage/Time-Margin-Enhanced Power Reduction. ISSCC 2025: 508-510- [c2]Jin-Hyeok Baek, Jang-Hoo Kim, Yoo-Chang Sung, Jae-Woo Jeong, Jin-Kwan Park, Hyun-Kyu Oh, Bo-Hyeon Lee, Dong-Wan Ko, Tae-Seob Oh, Seung-Gi Hong, Chang-Ki Kwon
, Daihyun Lim, Myeong-O. Kim, Seung-Jun Bae, Tae-Young Oh, Sang-Jun Hwang:
A 16Gb 12.7Gb/s/pin LPDDR5-Ultra-Pro DRAM with 4-Phase Self-Calibration and AC-Coupled Transceiver Equalization in a 5th-Generation 10nm DRAM Process. ISSCC 2025: 510-512 - 2023
- [j1]Yesin Ryu, Sung-Gi Ahn, Jaehoon Lee, Jaewon Park, Yong-Ki Kim, Hyochang Kim, Yeong Geol Song, Han-Won Cho, Sunghye Cho, Seung Ho Song, Haesuk Lee, Useung Shin, Jonghyun Ahn, Je-Min Ryu, Sukhan Lee, Kyounghwan Lim, Jungyu Lee, Jeong Hoan Park, Jae-Seung Jeong, Sunghwan Jo, Dajung Cho, Sooyoung Kim, Minsu Lee, Hyunho Kim, Minhwan Kim, Jae San Kim, Jinah Kim, Hyun Gil Kang, Myung-Kyu Lee, Sung-Rae Kim, Young-Cheon Kwon, Young-Yong Byun, Kijun Lee, Sangkil Park, Jaeyoun Youn, Myeong-O. Kim, Kyomin Sohn, SangJoon Hwang, JooYoung Lee:
A 16 GB 1024 GB/s HBM3 DRAM With Source-Synchronized Bus Design and On-Die Error Control Scheme for Enhanced RAS Features. IEEE J. Solid State Circuits 58(4): 1051-1061 (2023) - 2022
- [c1]Yesin Ryu, Young-Cheon Kwon, Jaehoon Lee, Sung-Gi Ahn, Jaewon Park, Kijun Lee, Yu Ho Choi, Han-Won Cho, Jae San Kim, Jungyu Lee, Haesuk Lee, Seung Ho Song, Je-Min Ryu, Yeong Ho Yun, Useung Shin, Dajung Cho, Jeong Hoan Park, Jae-Seung Jeong, Sukhan Lee, Kyounghwan Lim, Tae-Sung Kim, Kyungmin Kim, Yu Jin Cha, Ik Joo Lee, Tae Kyu Byun, Han Sik Yoo, Yeong Geol Song, Myung-Kyu Lee, Sunghye Cho, Sung-Rae Kim, Ji-Min Choi, Hyoungmin Kim, Soo Young Kim, Jaeyoun Youn, Myeong-O. Kim, Kyomin Sohn, SangJoon Hwang, JooYoung Lee:
A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Scheme for Enhanced RAS Features. VLSI Technology and Circuits 2022: 130-131
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