High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs.

Ling Yang 0003 Xidian University, School of Advanced Materials and Nanotechnology, China Xidian University, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, China https://orcid.org/0000-0001-7284-8180 Ling Yang Ling Yang 0001 Hunan University, College of Electrical and Information Engineering, Changsha, China Hunan University, National Electric Power Conversion and Control Engineering Technology Research Center, Changsha, China https://orcid.org/0000-0002-8707-6977 https://www.wikidata.org/entity/Q61758963 Ling Yang 0002 Lanzhou University, School of Information Science and Engineering, China https://orcid.org/0000-0002-4570-3784 Ling Yang 0004 Tongji University, College of Surveying and Geo-Informatics, Shanghai, China https://orcid.org/0000-0001-7663-7743 https://www.wikidata.org/entity/Q93160138 Ling Yang 0005 St. John's University, Department of Marketing and Logistics Management, Taipei, Taiwan Ling Yang 0006 Princeton University, NJ, USA Peking University, Beijing, China https://yangling0818.github.io/ https://scholar.google.com/citations?user=sIKujqAAAAAJ https://www.researchgate.net/profile/Ling-Yang-72 https://openreview.net/profile?id=~Ling_Yang1 https://github.com/YangLing0818 https://orcid.org/0000-0003-1905-8053 https://www.wikidata.org/entity/Q131135673 Ling Yang 0007 Chinese Academy of Sciences, National Key Laboratory of Microwave Imaging, Beijing, China University of Chinese Academy of Sciences, School of Electronic, Electrical and Communication Engineering, Beijing, China Aerospace Information Research Institute, National Key Laboratory of Microwave Imaging, Beijing, China https://orcid.org/0000-0001-9738-4634 Ling Yang 0008 National University of Defense Technology, School of Computer, Changsha, China https://orcid.org/0000-0002-0838-0066 https://www.wikidata.org/entity/Q130853515

Qian Yu Ling Yang 0003 Long Zhang Chunzhou Shi Bin Hou Mei Wu Meng Zhang Hao Lu 0012 Xu Zou Wenze Gao Xiaohua Ma 0001 Yue Hao 0001 High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs. 2026 69 Sci. China Inf. Sci. 2 https://doi.org/10.1007/s11432-025-4527-1 db/journals/chinaf/chinaf69.html#YuYZSHWZLZGMH26 streams/journals/chinaf

Shiming Li Hao Lu 0012 Ling Yang 0003 Mei Wu Bin Hou Meng Zhang Xiaohua Ma 0001 Yue Hao 0001 High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap. 2026 69 Sci. China Inf. Sci. 3 https://doi.org/10.1007/s11432-025-4572-5 db/journals/chinaf/chinaf69.html#LiLYWHZMH26 streams/journals/chinaf

Hao Lu 0012 Xiaohua Ma 0001 Longge Deng Ling Yang 0003 Bin Hou Meng Zhang Mei Wu Yue Hao 0001 High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process. 2026 69 Sci. China Inf. Sci. 3 https://doi.org/10.1007/s11432-025-4494-2 db/journals/chinaf/chinaf69.html#LuMDYHZWH26 streams/journals/chinaf

Mao Jia Bin Hou Ling Yang 0003 Meng Zhang Mei Wu Hao Lu 0012 Xitong Hong Zhiqiang Xue Jiale Du Qingyuan Chang Qian Xiao Xiaohua Ma 0001 Yue Hao 0001 Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. 2025 68 Sci. China Inf. Sci. 5 https://doi.org/10.1007/s11432-024-4343-5 db/journals/chinaf/chinaf68.html#JiaHYZWLHXDCXMH25 streams/journals/chinaf

Qing Zhu 0013 Zhenni Wang Yuxiang Wei 0006 Ling Yang 0003 Xiaoli Lu Jiejie Zhu Peng Zhong Yimin Lei Xiaohua Ma 0001 Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. 2024 67 Sci. China Inf. Sci. 1 https://doi.org/10.1007/s11432-023-3867-4 db/journals/chinaf/chinaf67.html#ZhuWWYLZZLM24

Chunzhou Shi Ling Yang 0003 Meng Zhang Hao Lu 0012 Mei Wu Bin Hou Xuerui Niu Qian Yu Wenliang Liu 0003 Wenze Gao Xiaohua Ma 0001 Yue Hao 0001 Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. 2024 67 Sci. China Inf. Sci. 4 https://doi.org/10.1007/s11432-023-3940-x db/journals/chinaf/chinaf67.html#ShiYZLWHNYLGMH24

Qingyuan Chang Bin Hou Ling Yang 0003 Mei Wu Meng Zhang Hao Lu 0012 Fuchun Jia Xuerui Niu Chunzhou Shi Jiale Du Mao Jia Qian Yu Shiming Li Youjun Zhu Xiaohua Ma 0001 Yue Hao 0001 High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. 2024 67 Sci. China Inf. Sci. 12 https://doi.org/10.1007/s11432-024-4164-1 db/journals/chinaf/chinaf67.html#ChangHYWZLJNSDJYLZMH24 streams/journals/chinaf

Siyu Liu Xiaohua Ma 0001 Jiejie Zhu Minhan Mi Jingshu Guo Jielong Liu Yilin Chen Qing Zhu 0013 Ling Yang 0003 Yue Hao 0001 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. 2022 65 Sci. China Inf. Sci. 10 https://doi.org/10.1007/s11432-021-3359-y db/journals/chinaf/chinaf65.html#LiuMZMGLCZYH22

Yuchen Wang Xiaohua Ma 0001 Yang Lu Bochao Zhao Ziyue Zhao 0003 Chupeng Yi Ling Yang 0003 Jiangyi Shi Yue Hao 0001 A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits. 1-9 2022 71 IEEE Trans. Instrum. Meas. https://doi.org/10.1109/TIM.2022.3196953 db/journals/tim/tim71.html#WangMLZZYYSH22

Hao Lu 0012 Likun Zhou Longge Deng Ling Yang 0003 Bin Hou Xiaohua Ma 0001 Yue Hao 0001 First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. 30-31 2022 ICTA https://doi.org/10.1109/ICTA56932.2022.9962999 conf/icta3/2022 db/conf/icta3/icta2022.html#LuZD0HMH22

Yue Hao 0001 Shuiying Xiang Genquan Han Jincheng Zhang 0001 Xiaohua Ma 0001 Zhangming Zhu Xingxing Guo Yahui Zhang Yanan Han Ziwei Song Yan Liu Ling Yang 0003 Hong Zhou Jiangyi Shi Wei Zhang 0343 Min Xu Weisheng Zhao Biao Pan Yangqi Huang Qi Liu 0010 Yimao Cai Jian Zhu Xin Ou Tiangui You Huaqiang Wu Bin Gao 0006 Zhiyong Zhang Guoping Guo Yonghua Chen Yong Liu Xiangfei Chen Chunlai Xue Xingjun Wang Lixia Zhao Xihua Zou Lianshan Yan Ming Li Recent progress of integrated circuits and optoelectronic chips. 2021 64 Sci. China Inf. Sci. 10 https://doi.org/10.1007/s11432-021-3235-7 db/journals/chinaf/chinaf64.html#HaoXHZMZGZHSLYZ21

Hao Lu 0012 Xiaohua Ma 0001 Bin Hou Ling Yang 0003 Teng Huo Zeyan Si Yue Hao 0001 Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. 78-79 2021 ICTA https://doi.org/10.1109/ICTA53157.2021.9661678 conf/icta3/2021 db/conf/icta3/icta2021.html#LuMH0HSH21

Qing Zhu 0013 Xiaohua Ma 0001 Bin Hou Mei Wu Jiejie Zhu Ling Yang 0003 Meng Zhang Yue Hao 0001 Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. 35520-35528 2020 8 IEEE Access https://doi.org/10.1109/ACCESS.2020.2975118 db/journals/access/access8.html#ZhuMHWZYZH20

Jiejie Zhu Bin Hou Lixiang Chen Qing Zhu 0013 Ling Yang 0003 Xiaowei Zhou Peng Zhang Xiaohua Ma 0001 Yue Hao 0001 Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. 1 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353704 conf/irps/2018 db/conf/irps/irps2018.html#ZhuHCZYZZMH18 Yimao Cai Qingyuan Chang Lixiang Chen Xiangfei Chen Yilin Chen Yonghua Chen Longge Deng Jiale Du Bin Gao 0006 Wenze Gao Guoping Guo Jingshu Guo Xingxing Guo Genquan Han Yanan Han Yue Hao 0001 Xitong Hong Bin Hou Yangqi Huang Teng Huo Fuchun Jia Mao Jia Yimin Lei Ming Li Shiming Li Jielong Liu Qi Liu 0010 Siyu Liu Wenliang Liu 0003 Yan Liu Yong Liu Hao Lu 0012 Xiaoli Lu Yang Lu Xiaohua Ma 0001 Minhan Mi Xuerui Niu Xin Ou Biao Pan Chunzhou Shi Jiangyi Shi Zeyan Si Ziwei Song Xingjun Wang Yuchen Wang Zhenni Wang Yuxiang Wei 0006 Huaqiang Wu Mei Wu Shuiying Xiang Qian Xiao Min Xu Chunlai Xue Zhiqiang Xue Lianshan Yan Chupeng Yi Tiangui You Qian Yu Jincheng Zhang 0001 Long Zhang Meng Zhang Peng Zhang Wei Zhang 0343 Yahui Zhang Zhiyong Zhang Bochao Zhao Lixia Zhao Weisheng Zhao Ziyue Zhao 0003 Peng Zhong Hong Zhou Likun Zhou Xiaowei Zhou Jian Zhu Jiejie Zhu Qing Zhu 0013 Youjun Zhu Zhangming Zhu Xihua Zou Xu Zou