Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's.

Wolfgang Quade

Franco Venturi Enrico Sangiorgi Rossella Brunetti Wolfgang Quade Carlo Jacoboni Bruno Riccò Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's. 1276-1286 1991 10 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10 https://doi.org/10.1109/43.88923 db/journals/tcad/tcad10.html#VenturiSBQJR91

Wolfgang Quade Massimo Rudan Eckehard Schöll Hydrodynamic simulation of impact-ionization effects in p-n junctions. 1287-1294 1991 10 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10 https://doi.org/10.1109/43.88924 db/journals/tcad/tcad10.html#QuadeRS91

Rossella Brunetti Carlo Jacoboni Bruno Riccò Massimo Rudan Enrico Sangiorgi Eckehard Schöll Franco Venturi