Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices.

Gerald Lucovsky

S. Lee J. P. Long Gerald Lucovsky J. L. Whitten H. Seo J. Lüning Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. 364-369 2008 48 Microelectron. Reliab. 3 https://doi.org/10.1016/j.microrel.2007.07.068 db/journals/mr/mr48.html#LeeLLWSL08

Gerald Lucovsky H. Seo L. B. Fleming M. D. Ulrich J. Lüning Patrick Lysaght Gennadi Bersuker Intrinsic bonding defects in transition metal elemental oxides. 1623-1628 2006 46 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2006.07.032 db/journals/mr/mr46.html#LucovskySFULLB06

Gerald Lucovsky James C. Phillips Bond strain and defects at interfaces in high-k gate stacks. 770-778 2005 45 Microelectron. Reliab. 5-6 https://doi.org/10.1016/j.microrel.2004.11.051 db/journals/mr/mr45.html#LucovskyP05

Gerald Lucovsky J. G. Hong Charles C. Fulton N. A. Stoute Y. Zou Robert J. Nemanich David E. Aspnes Harald Ade D. G. Schlom Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. 827-830 2005 45 Microelectron. Reliab. 5-6 https://doi.org/10.1016/j.microrel.2004.11.038 db/journals/mr/mr45.html#LucovskyHFSZNAAS05

Yi-Mu Lee Yider Wu Gerald Lucovsky Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. 207-212 2004 44 Microelectron. Reliab. 2 https://doi.org/10.1016/j.microrel.2003.07.002 db/journals/mr/mr44.html#LeeWL04

Gerald Lucovsky Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects. 1417-1426 2003 43 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(03)00253-1 db/journals/mr/mr43.html#Lucovsky03

Carlton M. Osburn Indong Kim Sungkee Han Indranil De Kam F. Yee Shyam Gannavaram Sung-Joo Lee Chung-Ho Lee Zhijiong J. Luo Wenjuan Zhu 0002 John R. Hauser Dim-Lee Kwong Gerald Lucovsky T. P. Ma Mehmet C. Öztürk Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? 299-316 2002 46 IBM J. Res. Dev. 2-3 https://doi.org/10.1147/rd.462.0299 db/journals/ibmrd/ibmrd46.html#OsburnKHDYGLLLZHKLMO02

Gerald Lucovsky Gilbert B. Rayner Robert S. Johnson Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. 937-945 2001 41 Microelectron. Reliab. 7 https://doi.org/10.1016/S0026-2714(01)00046-4 https://www.wikidata.org/entity/Q127289260 db/journals/mr/mr41.html#LucovskyRJ01

Gerald Lucovsky Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability. 301-326 1999 43 IBM J. Res. Dev. 3 https://doi.org/10.1147/rd.433.0301 db/journals/ibmrd/ibmrd43.html#Lucovsky99

Nino A. Masnari John R. Hauser Gerald Lucovsky Dennis M. Maher Robert J. Markunas Mehmet C. Bztork Jimmie J. Wortman Cener for advanced electronic materials processing. 42-59 1993 81 Proc. IEEE 1 https://doi.org/10.1109/jproc.1993.752025 db/journals/pieee/pieee81.html#MasnariHLMMBW93

Harald Ade David E. Aspnes Gennadi Bersuker Mehmet C. Bztork Indranil De L. B. Fleming Charles C. Fulton Shyam Gannavaram Sungkee Han John R. Hauser J. G. Hong Robert S. Johnson Indong Kim Dim-Lee Kwong Chung-Ho Lee S. Lee Sung-Joo Lee Yi-Mu Lee J. P. Long J. Lüning Zhijiong J. Luo Patrick Lysaght T. P. Ma Dennis M. Maher Robert J. Markunas Nino A. Masnari Robert J. Nemanich Carlton M. Osburn Mehmet C. Öztürk James C. Phillips Gilbert B. Rayner D. G. Schlom H. Seo N. A. Stoute M. D. Ulrich J. L. Whitten Jimmie J. Wortman Yider Wu Kam F. Yee Wenjuan Zhu 0002 Y. Zou