Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations.

J. W. McPherson Edward Van Brunt Daniel J. Lichtenwalner J. H. Park Satyaki Ganguly J. W. McPherson Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations. 1-4 2023 IRPS https://doi.org/10.1109/IRPS48203.2023.10117702 conf/irps/2023 db/conf/irps/irps2023.html#BruntLPGM23 Evelyn Landman Shai Cohen Noam Brousard Raanan Gewirtzman Inbar Weintrob Eyal Fayne Yahel David Yuval Bonen Omer Niv Shai Tzroia Alex Burlak J. W. McPherson Degradation Monitoring - from a Vision to Reality. 1-4 2019 IRPS https://doi.org/10.1109/IRPS.2019.8720527 conf/irps/2019 db/conf/irps/irps2019.html#LandmanCBGWFDBN19 J. W. McPherson Brief history of JEDEC qualification standards for silicon technology and their applicability(?) to WBG semiconductors. 3 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353556 conf/irps/2018 db/conf/irps/irps2018.html#McPherson18 J. W. McPherson Understanding the underlying degradation physics for proper time-to-failure distribution selection. 1 2015 IRPS https://doi.org/10.1109/IRPS.2015.7112798 conf/irps/2015 db/conf/irps/irps2015.html#McPherson15

J. W. McPherson Time dependent dielectric breakdown physics - Models revisited. 1753-1760 2012 52 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2012.06.007 db/journals/mr/mr52.html#McPherson12

J. W. McPherson Reliability Trends with Advanced CMOS Scaling and The Implications for Design. 405-412 2007 CICC https://doi.org/10.1109/CICC.2007.4405763 conf/cicc/2007 db/conf/cicc/cicc2007.html#McPherson07 J. W. McPherson Reliability challenges for 45nm and beyond. 176-181 2006 conf/dac/2006 DAC https://doi.org/10.1145/1146909.1146959 db/conf/dac/dac2006.html#McPherson06

J. W. McPherson Mie-Grüneisen Analysis of the Molecular Bonding States in Silica Which Impact Time-Dependent Dielectric Breakdown. 1491-1496 2004 44 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2004.07.045 db/journals/mr/mr44.html#McPherson04

J. W. McPherson Scaling-Induced Reductions in CMOS Reliability Margins and the Escalating Need for Increased Design-In Reliability Efforts. 123-130 2001 conf/isqed/2001 ISQED https://doi.org/10.1109/ISQED.2001.915216 https://doi.ieeecomputersociety.org/10.1109/ISQED.2001.915216 db/conf/isqed/isqed2001.html#McPherson01 Yuval Bonen Noam Brousard Edward Van Brunt Alex Burlak Shai Cohen Yahel David Eyal Fayne Satyaki Ganguly Raanan Gewirtzman Evelyn Landman Daniel J. Lichtenwalner Omer Niv J. H. Park Shai Tzroia Inbar Weintrob