Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension.

Shiyu Zhang Dongqing Hu Xintian Zhou Yunpeng Jia Yu Wu 0015 Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. 66-72 2023 EITCE https://doi.org/10.1145/3650400.3650412 conf/eitce/2023 db/conf/eitce/eitce2023.html#ZhangHZJ023