"High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec ..."

Yi Han et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185373

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type: Conference or Workshop Paper

metadata version: 2024-10-06

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Yi Han, Jingxuan Sun, Jin Hee Bae, Detlev Grützmacher, Joachim Knoch, Qing-Tai Zhao:
High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain. VLSI Technology and Circuits 2023: 1-2

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