"NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great ..."

E. Ray Hsieh et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830515

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type: Conference or Workshop Paper

metadata version: 2026-04-13

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E. Ray Hsieh, J. K. Chang, T. Y. Tang, Y. J. Li, C. W. Liang, M. Y. Lin, S. Y. Huang, C. J. Su, J. C. Guo, Steve S. Chung:
NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 10¹⁰ Cycles of Endurance, and Decade Lifetime at 103 °C. VLSI Technology and Circuits 2022: 359-360

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