"Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 ..."

Zehao Lin, Mengwei Si, Peide D. Ye (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830156

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type: Conference or Workshop Paper

metadata version: 2022-08-04

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Zehao Lin, Mengwei Si, Peide D. Ye:
Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 10⁹ Cycles without VT Drift Penalty. VLSI Technology and Circuits 2022: 1-2

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