<?xml version="1.0" encoding="US-ASCII"?>
<dblp>
<article key="journals/iet-cds/ZhangLSZY20" mdate="2024-11-06">
<author>Kai Zhang</author>
<author>Weifeng L&#252;</author>
<author>Peng Si</author>
<author>Zhifeng Zhao</author>
<author>Tianyu Yu 0007</author>
<title>Performance improvement of timing and power variations due to random dopant fluctuation in negative-capacitance CMOS inverters.</title>
<pages>908-914</pages>
<year>2020</year>
<volume>14</volume>
<journal>IET Circuits Devices Syst.</journal>
<number>6</number>
<ee>https://doi.org/10.1049/iet-cds.2020.0101</ee>
<url>db/journals/iet-cds/iet-cds14.html#ZhangLSZY20</url>
</article>
</dblp>
