"4H-SiC semi-superjunction IGBT with split-gate and back-side trench ..."

Dong Wu et al. (2025)

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DOI: 10.1016/J.MEJO.2025.106671

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type: Journal Article

metadata version: 2025-04-29

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Dong Wu, Xiang Guo, Zhao Ding, Wenhan Hou:
4H-SiC semi-superjunction IGBT with split-gate and back-side trench heterojunction for low loss and low EMI noise. Microelectron. J. 159: 106671 (2025)

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