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ORCIDRock-Hyun Baek
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- affiliation: Pohang University of Science and Technology, South Korea
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2020 – today
- 2025
[j27]Sanguk Lee
, Jinsu Jeong, Jongseo Park, Seunghwan Lee, Junjong Lee, Yonghwan Ahn, Minchan Kim, Rock-Hyun Baek:
Patterned Multi-Wall Nanosheet FETs for Sustainable Scaling: Zero Gate Extension With Minimal Gate Cut Width. IEEE Access 13: 99355-99365 (2025)- [j26]Jung Rae Cho, Seungwon Go, Jingyu Park, Tae Jun Yang, Seonhaeng Lee, Namhyun Lee, Dong Keun Lee, Yoon Kim, Myounggon Kang, Rock-Hyun Baek, Changhyun Kim, Sangwan Kim, Dae Hwan Kim:
Analysis of Bias Temperature Instability in Peripheral CMOS Devices for Low-Temperature Memory Applications. IEEE Access 13: 156497-156503 (2025) - [j25]Seungjoon Eom, Seunghwan Lee, Hyeok Yun, Kyeongrae Cho, Soomin Kim, Rock-Hyun Baek:
Machine Learning-Driven Extraction of Hybrid Compact Models Integrating Neural Networks and Berkeley Short-Channel Insulated-Gate Field-Effect Transistor Model-Common Multigate for Multidevice Applications. Adv. Intell. Syst. 7(5) (2025) - 2024
- [j24]Hyunseo You, Kihoon Nam, Jehyun An, Chanyang Park, Donghyun Kim, Seonhaeng Lee, Namhyun Lee, Rock-Hyun Baek:
Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications. IEEE Access 12: 10988-10994 (2024) - [j23]Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim:
Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning. IEEE Access 12: 23881-23886 (2024) - [j22]Bohyeon Kang, Jehyun An, Jongseo Park, Giryun Hong, Beomjoo Ham, Jaeseong Pyo, Sung-Min Ahn, Rock-Hyun Baek:
FEOL Monolithic Co-Integration of FeFET and CMOS on 8-Inch Wafer Using Laser Spike Annealing With Implementation of an FeFET Inverter. IEEE Access 12: 110273-110282 (2024) - [j21]Seunghwan Lee, Seungjoon Eom, Jinsu Jeong, Junjong Lee, Sanguk Lee, Hyeok Yun, Yonghwan Ahn, Rock-Hyun Baek:
Multi-Task Learning for Real-Time BSIM-CMG Parameter Extraction of NSFETs With Multiple Structural Variations. IEEE Access 12: 184619-184628 (2024) - [j20]Seungjoon Eom, Hyeok Yun, Hyundong Jang, Kyeongrae Cho, Seunghwan Lee, Jinsu Jeong, Rock-Hyun Baek:
Neural Compact Modeling Framework for Flexible Model Parameter Selection with High Accuracy and Fast SPICE Simulation. Adv. Intell. Syst. 6(4) (2024) - [j19]Hyeok Yun, Hyundong Jang, Seunghwan Lee, Junjong Lee, Kyeongrae Cho, Seungjoon Eom, Soomin Kim, Choong-Ki Kim, Hong-Chul Byun, Seongjoo Han, Min-Soo Yoo, Rock-Hyun Baek:
Nonlinear Variation Decomposition of Neural Networks for Holistic Semiconductor Process Monitoring. Adv. Intell. Syst. 6(10) (2024) - 2023
- [j18]Kihoon Nam, Chanyang Park, Hyeok Yun, Jun-Sik Yoon, Hyundong Jang, Kyeongrae Cho, Min Sang Park, Hyun-Chul Choi, Rock-Hyun Baek:
Holistic Optimization of Trap Distribution for Performance/Reliability in 3-D NAND Flash Using Machine Learning. IEEE Access 11: 7135-7144 (2023) - [j17]Jongseo Park, Kyeong-Keun Choi, Jehyun An, Bohyeon Kang, Hyeonseo You, Giryun Hong, Sung-Min Ahn, Rock-Hyun Baek:
Curing Process on Passivation Layer for Backside-Illuminated CMOS Image Sensor Application. IEEE Access 11: 60660-60667 (2023) - [j16]Hyeok Yun, Chang-Hyeon An, Hyundong Jang, Kyeongrae Cho, Jeong-Sik Lee, Seungjoon Eom, Choong-Ki Kim, Min-Soo Yoo, Hyun-Chul Choi, Rock-Hyun Baek:
Accurate Prediction and Reliable Parameter Optimization of Neural Network for Semiconductor Process Monitoring and Technology Development. Adv. Intell. Syst. 5(9) (2023) - [j15]Kyeongrae Cho, Jeong-Sik Lee, Chanyang Park, Hyeok Yun, Hyundong Jang, Seungjoon Eom, Min Sang Park, Hyun-Chul Choi, Rock-Hyun Baek:
Modeling of 3D NAND Characteristics for Cross-Temperature by Using Graph Neural Network and Its Application. Adv. Intell. Syst. 5(12) (2023) - [c2]J. Lee, J. Jeong, S. Lee, S. Lee, J. Lim, S. C. Song, Shashank Ekbote, Nick Stevens-Yu, David Greenlaw, Rock-Hyun Baek:
Front-side and Back-side Power Delivery Network Guidelines for 2nm node High Perf Computing and Mobile SoC applications. VLSI Technology and Circuits 2023: 1-2 - 2022
- [j14]Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Junjong Lee, Sanguk Lee, Jaewan Lim, Rock-Hyun Baek:
DC Performance Variations by Grain Boundary in Source/Drain Epitaxy of Sub-3-nm Nanosheet Field-Effect Transistors. IEEE Access 10: 22032-22037 (2022) - [j13]Hyundong Jang, Hyeok Yun, Chanyang Park, Kyeongrae Cho, Kihoon Nam, Jun-Sik Yoon, Hyun-Chul Choi, Rock-Hyun Baek:
Extraction of Device Structural Parameters Through DC/AC Performance Using an MLP Neural Network Algorithm. IEEE Access 10: 64408-64419 (2022) - [j12]Jeong-Sik Lee, Rock-Hyun Baek, Hyun-Chul Choi:
Arbitrary Font Generation by Encoder Learning of Disentangled Features. Sensors 22(6): 2374 (2022) - [j11]Ubaid Ullah, Jeong-Sik Lee, Chang-Hyeon An, Hyeonjin Lee, Su-Yeong Park, Rock-Hyun Baek, Hyun-Chul Choi:
A Review of Multi-Modal Learning from the Text-Guided Visual Processing Viewpoint. Sensors 22(18): 6816 (2022) - 2021
- [j10]Jinsu Jeong, Jun-Sik Yoon, Rock-Hyun Baek:
Analysis of TSV-Induced Mechanical Stress and Electrical Noise Coupling in Sub 5-nm Node Nanosheet FETs for Heterogeneous 3D-ICs. IEEE Access 9: 16728-16735 (2021) - [j9]Jun-Sik Yoon, Seunghwan Lee, Hyeok Yun, Rock-Hyun Baek:
Digital/Analog Performance Optimization of Vertical Nanowire FETs Using Machine Learning. IEEE Access 9: 29071-29077 (2021) - [j8]Junjong Lee, Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Sanguk Lee, Rock-Hyun Baek:
Monolithic 3D 6T-SRAM Based on Newly Designed Gate and Source/Drain Bottom Contact Schemes. IEEE Access 9: 138192-138199 (2021) - 2020
- [j7]Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Rock-Hyun Baek:
Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application. IEEE Access 8: 35873-35881 (2020) - [j6]Hyun-Chul Choi, Hyeok Yun, Jun-Sik Yoon, Rock-Hyun Baek:
Neural Approach for Modeling and Optimizing Si-MOSFET Manufacturing. IEEE Access 8: 159351-159370 (2020) - [j5]Jun-Sik Yoon, Rock-Hyun Baek:
Device Design Guideline of 5-nm-Node FinFETs and Nanosheet FETs for Analog/RF Applications. IEEE Access 8: 189395-189403 (2020) - [j4]Jun-Sik Yoon, Rock-Hyun Baek:
A Novel Sub-5-nm Node Dual-Workfunction Folded Cascode Nanosheet FETs for Low Power Mobile Applications. IEEE Access 8: 196975-196978 (2020)
2010 – 2019
- 2019
- [j3]Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Rock-Hyun Baek:
Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain. IEEE Access 7: 38593-38596 (2019) - [j2]Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Rock-Hyun Baek:
Bottom Oxide Bulk FinFETs Without Punch-Through-Stopper for Extending Toward 5-nm Node. IEEE Access 7: 75762-75767 (2019) - [j1]Jun-Sik Yoon, Seunghwan Lee, Junjong Lee, Jinsu Jeong, Hyeok Yun, Bohyeon Kang, Rock-Hyun Baek:
Source/Drain Patterning FinFETs as Solution for Physical Area Scaling Toward 5-nm Node. IEEE Access 7: 172290-172295 (2019) - 2018
- [c1]Kyunghyun Lim, Minsoo Choi, Myat Thu Linn Aung, Kyunghwan Kim, Ji-Seong Kim, Rock-Hyun Baek, Ho-Jin Song, Tony Tae-Hyoung Kim, Byungsub Kim:
Experimental Verification of a Simple, Intuitive, and Accurate Closed-Form Transfer Function Model for Diverse High-Speed Interconnects. ISOCC 2018: 239-240
Coauthor Index
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