A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm<sup>2</sup> at 0.85V.

Myeonghee Oh Hyunjin Shin Sangkyung Won Dohui Kim Byunghun Choi Gyusung Kim Myeonghee Oh Jaeseung Choi 0001 Jongwook Kye A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm<sup>2</sup> at 0.85V. 132-133 2022 VLSI Technology and Circuits https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830151 conf/vlsit/2022 db/conf/vlsit/vlsit2022.html#ShinWKCKO0K22 Hyunjin Shin Myeonghee Oh Jaeseung Choi 0001 Taejoong Song Jongwook Kye A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application. 1-2 2021 VLSI Circuits https://doi.org/10.23919/VLSICircuits52068.2021.9492384 conf/vlsic/2021 db/conf/vlsic/vlsic2021.html#ShinO0SK21 Byunghun Choi Jaeseung Choi 0001 Dohui Kim Gyusung Kim Jongwook Kye Hyunjin Shin Taejoong Song Sangkyung Won