<?xml version="1.0"?>
<dblpperson name="Hema Lata Rao Maddi" pid="347/8980" n="1">
<person key="homepages/347/8980" mdate="2023-05-24">
<author pid="347/8980">Hema Lata Rao Maddi</author>
</person>
<r><inproceedings key="conf/irps/ZhuSJQBMWALSC23" mdate="2025-09-06">
<author pid="229/5422">Shengnan Zhu</author>
<author orcid="0009-0001-7012-5955" pid="347/8000">Limeng Shi</author>
<author orcid="0000-0001-5182-2926" pid="324/8762">Michael Jin</author>
<author pid="347/8981">Jiashu Qian</author>
<author pid="347/8548">Monikuntala Bhattacharya</author>
<author orcid="0000-0001-5064-8436" pid="347/8980">Hema Lata Rao Maddi</author>
<author pid="80/1664">Marvin H. White</author>
<author pid="194/0789">Anant K. Agarwal</author>
<author pid="08/6825">Tianshi Liu</author>
<author pid="296/2176">Atsushi Shimbori</author>
<author pid="295/7336">Chingchi Chen</author>
<title>Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs.</title>
<pages>1-5</pages>
<year>2023</year>
<booktitle>IRPS</booktitle>
<ee>https://doi.org/10.1109/IRPS48203.2023.10117998</ee>
<crossref>conf/irps/2023</crossref>
<url>db/conf/irps/irps2023.html#ZhuSJQBMWALSC23</url>
</inproceedings>
</r>
<coauthors n="10" nc="1">
<co c="0"><na f="a/Agarwal:Anant_K=" pid="194/0789">Anant K. Agarwal</na></co>
<co c="0"><na f="b/Bhattacharya:Monikuntala" pid="347/8548">Monikuntala Bhattacharya</na></co>
<co c="0"><na f="c/Chen:Chingchi" pid="295/7336">Chingchi Chen</na></co>
<co c="0"><na f="j/Jin:Michael" pid="324/8762">Michael Jin</na></co>
<co c="0"><na f="l/Liu:Tianshi" pid="08/6825">Tianshi Liu</na></co>
<co c="0"><na f="q/Qian:Jiashu" pid="347/8981">Jiashu Qian</na></co>
<co c="0"><na f="s/Shi:Limeng" pid="347/8000">Limeng Shi</na></co>
<co c="0"><na f="s/Shimbori:Atsushi" pid="296/2176">Atsushi Shimbori</na></co>
<co c="0"><na f="w/White:Marvin_H=" pid="80/1664">Marvin H. White</na></co>
<co c="0"><na f="z/Zhu:Shengnan" pid="229/5422">Shengnan Zhu</na></co>
</coauthors>
</dblpperson>

