100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS.

Donald A. Hitko

James Chingwei Li Kenneth R. Elliott David S. Matthews Donald A. Hitko Daniel Zehnder Yakov Royter Pamela R. Patterson Tahir Hussain Joseph F. Jensen 100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS. 2663-2670 2009 44 IEEE J. Solid State Circuits 10 https://doi.org/10.1109/JSSC.2009.2026819 db/journals/jssc/jssc44.html#LiEMHZRPHJ09

Marko Sokolich Mary Y. Chen Rajesh D. Rajavel David H. Chow Yakov Royter Stephen Thomas III Charles H. Fields Binqiang Shi Steven S. Bui James Chingwei Li Donald A. Hitko Kenneth R. Elliott InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers. 1615-1621 2004 39 IEEE J. Solid State Circuits 10 https://doi.org/10.1109/JSSC.2004.833560 db/journals/jssc/jssc39.html#SokolichCRCRTTF04

Donald A. Hitko Circuit design and technological limitations of silicon RFICs for wireless applications. 2002 Massachusetts Institute of Technology, Cambridge, MA, USA https://hdl.handle.net/1721.1/8117 ndltd.org (oai:dspace.mit.edu:1721.1/8117) Donald A. Hitko Theodore L. Tewksbury Charles G. Sodini A 1V, 5mW, 1.8GHz balanced voltage-controlled oscillator with an integrated resonator. 46-51 1997 conf/islped/1997 ISLPED https://doi.org/10.1145/263272.263281 db/conf/islped/islped1997.html#HitkoTS97 Steven S. Bui Mary Y. Chen David H. Chow Kenneth R. Elliott Charles H. Fields Tahir Hussain Joseph F. Jensen James Chingwei Li David S. Matthews Pamela R. Patterson Rajesh D. Rajavel Yakov Royter Binqiang Shi Charles G. Sodini Marko Sokolich Theodore L. Tewksbury Stephen Thomas III Daniel Zehnder