Study of sub-5 nm RRAM, tunneling selector and selector less device.

I. Yang Kai-Shin Li Ming-Taou Lee Min-Cheng Chen Cho-Lun Hsu J. M. Lu C. H. Lin C. C. Chen B. W. Wu Y. F. Hou C. Yi. Lin Y. J. Chen T. Y. Lai M. Y. Li I. Yang C. S. Wu Fu-Liang Yang W. K. Yeh Study of sub-5 nm RRAM, tunneling selector and selector less device. 385-388 2015 ISCAS https://doi.org/10.1109/ISCAS.2015.7168651 conf/iscas/2015 db/conf/iscas/iscas2015.html#LiLCHLLCWHLCLLY15

Rajiv V. Joshi Ching-Te Chuang Samuel K. H. Fung Fari Assaderaghi Melanie Sherony I. Yang Ghavam V. Shahidi PD/SOI SRAM performance in presence of gate-to-body tunneling current. 1106-1113 2003 11 IEEE Trans. Very Large Scale Integr. Syst. 6 https://doi.org/10.1109/TVLSI.2003.817552 db/journals/tvlsi/tvlsi11.html#JoshiCFASYS03

Fari Assaderaghi C. C. Chen Min-Cheng Chen Y. J. Chen Ching-Te Chuang Samuel K. H. Fung Y. F. Hou Cho-Lun Hsu Rajiv V. Joshi T. Y. Lai Ming-Taou Lee Kai-Shin Li M. Y. Li C. H. Lin C. Yi. Lin J. M. Lu Ghavam V. Shahidi Melanie Sherony B. W. Wu C. S. Wu Fu-Liang Yang W. K. Yeh