Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode.

Xintong Xie Shuxiang Sun Zhijia Zhao 0005 Pengfei Zhang Jie Wei Xin Zhou Jingyu Shen Jinpeng Qiu Xiaorong Luo Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. 106091 2024 February 144 Microelectron. J. https://doi.org/10.1016/j.mejo.2024.106091 db/journals/mj/mj144.html#XieSZZWZSQL24