GATE EC||ANALOG ELECTRONIC||BJT||PYQS(2000-2025)

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Question 1

For the BJT Q1 in the circuit shown below, β = ∞, V_BE(on) = 0.7 V_CE(sat) = 0.7 V. The switch is initially closed. At time t = 0, the switch is opened. The time t at which Q1 leaves the active region is

(GATE 2011|| EC || PYQ || MCQ || 2 MARKS)

10 ms
25 ms
50 ms
100 ms

Question 2

In the voltage regulator shown below, V₁ is the unregulated at 15 V. Assume V_BE = 0.7 V and the base current is negligible for both the BJTs. If the regulated output V_o is 9 V, the value of R₂ is ……. Ω.

(GATE 2020 || EC || PYQ || NAT ||2 MARKS)

Question 3

In the figure shown, the npn transistor acts as a switch

For the input V_in(t) as shown in the figure, the transistor switches between the cut-off and saturation regions of operation, when T is large. Assume collector-to-emitter voltage at saturation V_CE(sat)= 0.2V and base-to-emitter voltage V_BE = 0.7 V. The minimum value of the common- base current gain (α) of the transistor for the switching should be ………….

( GATE 2017 || EC || PYQ || NAT ||2 MARKS)

0.902

Question 4

Consider the circuit shown in the figure. Assuming V_BE1 = V_EB2 = 0.7 volt, the value of the dc voltage V_C2 (in volt) is …………………..

(GATE 2016 || EC || PYQ || NAT ||2 MARKS)

Question 5

The Ebers-Moll model of a BJT is valid

(GATE 2016 || EC || PYQ || MCQ ||2 MARKS)

only in a active mode
only in active and saturation modes
only in active and cut-off modes
in active, saturation and cut-off modes

Question 6

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter base voltage V_EB = 600 mV, the emitter collector voltage V_EC (in Volts) is ……………….

(GATE 2015 || EC || PYQ || NAT ||1 MARKS)

Question 7

In the circuit shown, the silicon BJT has β = 50. Assume V_BE = 0.7 V and V_CE(sat)= 0.2V. Which one of the following statements is correct?

(GATE 2014|| EC || PYQ || MCQ || 2 MARKS)

For R_C = 1 kΩ , the BJT operates in the saturation region
For R_C = 1 kΩ , the BJT operates in the saturation region
For R_C = 20 k Ω, the BJT operates in the saturation region
For R_C = 20 kΩ, the BJT operates in the linear region

Question 8

In the circuit shown, the PNP transistor has |V_BE| = 0.7 V and β = 50. Assume that R_B = 100 k Ω. For V₀ to be 5 V, the value of R_C (in k Ω) is ………….. .

(GATE 2014|| EC || PYQ || NAT ||1 MARKS)

1.075

Question 9

In the circuit shown below, the silicon npn transistor Q has a very high value of β. The required value of R₂ in kΩ to produce I_C = 1 mA is

(GATE 2013|| EC || PYQ || MCQ || 2 MARKS)

Question 10

Consider the circuit shown in the figure. Assume base-to-emitter voltage V_BE = 0.8 V and. Common- base current gain (α) of the transistor is unity. The value of collector-to-emitter voltage V_CE (in Volt) is ………….

(GATE 2012|| EC || PYQ || NAT ||2 MARKS)

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