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p-n Junction Diodes Vbi Computation

This document describes a Matlab code that calculates the built-in voltage (Vbi) of silicon p+/n and n+/p step junction diodes at 300K for different doping concentrations (ND). The code defines constants, computes Vbi using the formula Vbi=EG/2+kT*log(ND/ni) for varying ND values, and plots the results on a graph with labels.
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0% found this document useful (0 votes)
38 views3 pages

p-n Junction Diodes Vbi Computation

This document describes a Matlab code that calculates the built-in voltage (Vbi) of silicon p+/n and n+/p step junction diodes at 300K for different doping concentrations (ND). The code defines constants, computes Vbi using the formula Vbi=EG/2+kT*log(ND/ni) for varying ND values, and plots the results on a graph with labels.
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd

LAB EXPERIMENT 1

p-n Junctions and Diodes


Built-in voltage in Si p+/n and n+/p step junction diodes at 300 K
Exercise 5.1
Matlab Code
caseI
%Vbi Computation (p+/n and n+/p junctions)
%Constants
EG=1.12;
kT=0.0259;
ni=1.0e10;
%Computation
ND=logspace(14,17);
Vbi=EG/2+kT.*log(ND./ni);
%Plotting
close
semilogx(ND,Vbi);

grid

axis([1.0e14 1.0e17 0.75 1])


xlabel('NA or ND (cm-3)');

ylabel('Vbi (volts)')

text(1e16,0.8,'Si, 300K')
text(1e16,0.78,'p+/n and n+/p diodes')

Case-II
%Vbi Computation (p+/n and n+/p junctions)

%Constants
EG=1.12;
kT=0.0259;
ni=1.0e10;

%Computation
ND=logspace(13,19);
Vbi=EG/2+kT.*log(ND./ni);

%Plotting
close
semilogx(ND,Vbi);

grid

axis([1.0e13 1.0e19 0.5 1.5])


xlabel('NA or ND (cm-3)');

ylabel('Vbi (volts)')

text(1e16,0.8,'Si, 300K')
text(1e16,0.78,'p+/n and n+/p diodes')

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