Nanomaterials
Lecture 3: Advanced Lithography
Department of Materials Science and Engineering, Northwestern University
Deep Ultra-Violet Lithography
Deep UV XeF XeCl KrF ArF F2 Excimer Laser Sources: 351 nm 308 nm 248 nm 193 nm 157 nm Fused silica / quartz optics
CaF optics difficult to grind and polish due to hygroscopic (water-absorbing) properties
Department of Materials Science and Engineering, Northwestern University
Phase Shifting Masks
Minimizes diffraction effects but complicates mask making
R. Waser (ed.), Nanoelectronics and Information Technology, Chapter 9
Department of Materials Science and Engineering, Northwestern University
Influence of Substrate Reflections
Interference between incident and reflected photon beams can lead to a standing wave pattern in the resist.
Reflections can also occur at buried interfaces, thus leading to a dependence of linewidth on buried layer thicknesses.
R. Waser (ed.), Nanoelectronics and Information Technology, Chapter 9
Department of Materials Science and Engineering, Northwestern University
Effect of Anti-Reflective Coatings
Without Anti-Reflective Coating
With Anti-Reflective Coating
R. Waser (ed.), Nanoelectronics and Information Technology, Chapter 9
Department of Materials Science and Engineering, Northwestern University
Extreme Ultra-violet Lithography
(a.k.a., soft x-ray lithography) Developed at Sandia National Laboratory in 1996 EUV source based on a plasma created when a laser is focused on a beam of Xe gas clusters expanding at supersonic speeds ~ 10 nm NOTE: At short , optical materials are highly absorptive Reflective optics (e.g., Bragg reflectors) Thin, defect-free masks e.g., at = 13 nm, reflector consists of 40 layer pairs of Mo and Si with 7 nm periodicity per layer pair
Department of Materials Science and Engineering, Northwestern University
Extreme Ultra-violet Lithography (cont.)
G. D. Hutcheson, et al., Scientific American, 290, 76 (2004).
Department of Materials Science and Engineering, Northwestern University
Typical EUV Mask
R. Waser (ed.), Nanoelectronics and Information Technology, Chapter 9
Department of Materials Science and Engineering, Northwestern University
Depth of focus is less of an issue at short wavelengths high aspect ratio resist profiles are possible with EUV
G. Timp, Nanotechnology, Chapter 4
Department of Materials Science and Engineering, Northwestern University
Example of resist patterned with EUV lithography:
G. Timp, Nanotechnology, Chapter 4
Department of Materials Science and Engineering, Northwestern University
X-Ray Lithography
= 1 nm BUT resolution = k(g)1/2 where g = size of gap between mask and substrate (tends to be 5 40 m in production) Therefore, resolution = 0.07 0.2 m for = 1 nm However, when contact printing is done in research environments, 30 nm resolution is achievable High aspect ratios are achieved in developed resists
Department of Materials Science and Engineering, Northwestern University
Example of resist patterned with x-ray lithography:
R. Waser (ed.), Nanoelectronics and Information Technology, Chapter 9
Department of Materials Science and Engineering, Northwestern University
Established Advantages of X-Ray Lithography
(1) Large depth of focus (2) Excellent resist profiles (pillars of resist) (3) Large process latitude (4) Linewidth independent of substrate topography or type (5) Relatively immune to low atomic weight contaminants
Department of Materials Science and Engineering, Northwestern University
Remaining Disadvantages of X-Ray Lithography
(1) 1X mask technology (gold on 1 2 m thick silicon) Defects, aspect ratio, bending, and heating are problems (2) Source cost and/or complexity (3) Alignment/registration is nontrivial To become a commercial success, x-ray lithography needs: (A) A mask distortion free, inspectable, repairable (B) A resist presently acceptable but could be improved (C) An alignment/registration system (D) An x-ray source acceptable cost and throughput
Department of Materials Science and Engineering, Northwestern University
Ion Beam Lithography
Typically, liquid metal (e.g., gallium) ions are used Ion projection lithography developed in the late 1970s Advanced lithography group government, and universities consortium of industry,
ALG-1000 20 m by 20 m fields at 3X reduction using 150 keV hydrogen ions 0.1 m resolution
Department of Materials Science and Engineering, Northwestern University
Advantages of Ion Beam Lithography
(1) Less long range scattering than electrons (2) Ion beams stay near initial trajectory no dose adjustment for different patterns or substrates (3) Can directly write metal lines (focused ion beam) suitable for mask repair
Department of Materials Science and Engineering, Northwestern University
Disadvantages of Ion Beam Lithography
(1) Ions interact strongly with target causing: (A) Ion mixing (B) Amorphizing crystals (C) Altered optical properties (D) Implanted dopants (E) Sputter etching (2) Ions are highly absorbed (typically within 10 nm) Stencil type masks The center of a ring falls out unless sub-resolution supports are used
Department of Materials Science and Engineering, Northwestern University
Electron Beam Lithography
Very popular in research environments Used for mask making commercially = h/(2mE)1/2 = 7.7 pm @ 25 keV serial (slow) process
Typically, EBL is direct write
Projection EBL systems have been developed e.g., SCALPEL (SCALPEL = Scattering with Angular Limitation Projection Electron-beam Lithography)
Department of Materials Science and Engineering, Northwestern University
Advantages of Electron Beam Lithography
(1) High resolution down to 5 nm (2) Useful design tool direct write allows for quick pattern changes (no masks are needed)
Disadvantages of Electron Beam Lithography
(1) Cost (up to $6 10 million for hardware) (2) Direct write has low throughput slow and expensive
Department of Materials Science and Engineering, Northwestern University
Projection Electron Beam Lithography
Department of Materials Science and Engineering, Northwestern University
Nanoimprint Lithography
Hot embossing
UV curing
R. Waser (ed.), Nanoelectronics and Information Technology, Chapter 9
Department of Materials Science and Engineering, Northwestern University
Nanoimprint Lithography Patterns
~20 nm pillars
~20 nm holes
~20 nm dots
P. R. Krauss, et al., Appl. Phys. Lett., 71, 3174 (1997).
Department of Materials Science and Engineering, Northwestern University
Other Lithographic Approaches
Microcontact Printing
60 nm
Nanosphere Lithography Scanning Probe Lithographies - Dip-pen Nanolithography - Field Induced Oxidation - Feedback Controlled Lithography We will revisit these approaches later in the course
1 nm
FIO
FCL
Department of Materials Science and Engineering, Northwestern University
