N
2N3904
C C B
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
Discrete POWER & Signal Technologies
MMBT3904
TO-92
E
SOT-23
Mark: 1A
MMPQ3904
B E B E B E B
PZT3904
C
C
SOIC-16
E C B
SOT-223
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
40 60 6.0 200 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 30 V, VEB = 0 VCE = 30 V, VEB = 0 40 60 6.0 50 50 V V V nA nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
0.65
0.2 0.3 0.85 0.95
V V V V
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure (except MMPQ3904) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 m A, VCE = 5.0 V, RS =1.0kW, f=10 Hz to 15.7 kHz 300 4.0 8.0 5.0 MHz pF pF dB
SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time
(except MMPQ3904)
VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA
35 35 200 50
ns ns ns ns
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Thermal Characteristics
Symbol
PD Rq JC Rq JA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3904 625 5.0 83.3 200
Max
*PZT3904 1,000 8.0 125
Units
mW mW/C C/W C/W
Symbol
PD Rq JA
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die
Max
**MMBT3904 350 2.8 357 MMPQ3904 1,000 8.0 125 240
Units
mW mW/C C/W C/W C/W
2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Typical Characteristics
Typical Pulsed Current Gain
- TYPICAL PULSED CURRENT GAIN
vs Collector Current
500
V CE = 5V
400
125 C
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation Voltage vs Collector Current
0.15 = 10
125 C
300
25 C
0.1
25 C
200 100 0 0.1
- 40 C
0.05
- 40 C
FE
10
100
0.1
I C - COLLECTOR CURRENT (mA)
1 10 I C - COLLECTOR CURRENT (mA)
Pr23
100
V BE(ON)- BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1
= 10
Base-Emitter ON Voltage vs Collector Current
1 VCE = 5V 0.8
- 40 C 25 C
0.8
- 40 C 25 C
0.6
125 C
0.6
125 C
0.4
0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA)
Pr23
100
0.2 0.1
1 10 I C - COLLECTOR CURRENT (mA)
Pr23
100
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Collector-Cutoff Current vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) 500
CAPACITANCE (pF) 10
Capacitance vs Reverse Bias Voltage
f = 1.0 MHz
100 10 1 0.1
VCB = 30V
5 4 3 2
C obo C ibo
25
50 75 100 125 TA - AMBIENT TEMPERATURE ( C)
Pr23
150
1 0.1
1 10 REVERSE BIAS VOLTAGE (V)
100
Noise Figure vs Frequency
12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1
I C = 100 A, R S = 500
Noise Figure vs Source Resistance
12 NF - NOISE FIGURE (dB)
I C = 1.0 mA
I C = 1.0 mA R S = 200 I C = 50 A R S = 1.0 k I C = 0.5 mA R S = 200
V CE = 5.0V 10
I C = 5.0 mA
8 6 4 2 0 0.1
I C= 50 A
I C= 100 A
1 10 f - FREQUENCY (kHz)
100
1 10 R S - SOURCE RESISTANCE ( k )
Pr23
100
Current Gain and Phase Angle vs Frequency
45 40 35 30 25 20 15 10 5 0 V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz) h fe
PD - POWER DISSIPATION (W)
Power Dissipation vs Ambient Temperature
0 20 40 60 80 100 120 140 160 180
1000
1
50 - CURRENT GAIN (dB)
SOT-223
0.75
TO-92
0.5
- DEGREES
SOT-23
0.25
fe
25
50 75 100 o TEMPERATURE ( C)
125
150
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Turn-On Time vs Collector Current
500 I B1 = I B2= 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA)
Pr23
Rise Time vs Collector Current
500 VCC = 40V t r - RISE TIME (ns) I B1= I B2=
Ic 10
Ic 10
100
T J = 125C
T J = 25C
10
100
10 I C - COLLECTOR CURRENT (mA)
Pr23
100
Storage Time vs Collector Current
500 t S - STORAGE TIME (ns) I B1= I B2=
T J = 25C Ic 10
Fall Time vs Collector Current
500 I B1= I B2= t f - FALL TIME (ns)
T J = 125C Ic 10
VCC = 40V
100
T J = 125C
100
T J = 25C
10 5 1 10 I C - COLLECTOR CURRENT (mA)
Pr23
10 100 5 1 10 I C - COLLECTOR CURRENT (mA)
Pr23
100
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Test Circuits
3.0 V
300 ns 10.6 V Duty Cycle = 2% 0 - 0.5 V
< 1.0 ns
275
10 K C 1 < 4.0 pF
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
10 < t1 < 500 s
t1 10.9 V 275
Duty Cycle = 2% 0 10 K C 1 < 4.0 pF - 9.1 V
< 1.0 ns
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
This datasheet has been download from: [Link] Datasheets for electronics components.
