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2SD 718 - Isc

The document provides specifications for the Inchange Semiconductor 2SD718 silicon NPN power transistor. It is packaged in a TO-3P(I) case and is intended for power amplifier applications requiring 45-50W of audio frequency power. Key specifications include an absolute maximum collector-emitter voltage of 120V, a current gain range of 55-160, and an output capacitance of 170pF. The document provides detailed ratings, characteristics, and package outline dimensions for the transistor.

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739 views4 pages

2SD 718 - Isc

The document provides specifications for the Inchange Semiconductor 2SD718 silicon NPN power transistor. It is packaged in a TO-3P(I) case and is intended for power amplifier applications requiring 45-50W of audio frequency power. Key specifications include an absolute maximum collector-emitter voltage of 120V, a current gain range of 55-160, and an output capacitance of 170pF. The document provides detailed ratings, characteristics, and package outline dimensions for the transistor.

Uploaded by

Steven
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD718

DESCRIPTION
With TO-3P(I) package
Complement to type 2SB688

APPLICATIONS
Power amplifier applications
Recommend for 45~50W audio frequency
amplifier output stage

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3 Emitter

TO R

Absolute maximum ratings(Ta=25)
N D U
SYMBOL
EM I C
PARAMETER
O CONDITIONS VALUE UNIT

G E S
N
VCBO Collector-base voltage Open emitter 120 V

A
INCH
VCEO Collector-emitter voltage Open base 120 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 8 A

IB Base current 0.8 A

PT Total power dissipation TC=25 80 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD718

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Base-emitter breakdown voltage IC=50mA ,IB=0 120 V

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V

VBE Base-emitter voltage IC=5A ; VCE=5V 1.5 V

ICBO Collector cut-off current VCB=120V; IE=0 10 A

IEBO Emitter cut-off current VEB=5V; IC=0 10 A

hFE DC current gain IC=1A ; VCE=5V 55 160

fT Transition frequency IC=1A ; VCE=5V 12 MHz

R
Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 170 pF

D U TO
N
C O

I
hFE Classifications

R O
E S EM
A NG
INCH
55-110 80-160

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD718

PACKAGE OUTLINE

TO R
N D U
EM I C O
G E S
A N
INCH
Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)

3
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD718

TO R
N D U
EM I C O
G E S
A N
INCH

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