P3004ND5G

NIKO-SEM N- & P-Channel Enhancement Mode Field

TO-252-5
Effect Transistor
Halogen-Free & Lead-Free

PRODUCT SUMMARY
D1 D2

D1/D2
V(BR)DSS RDS(ON) ID

S2 G2
N-Channel 40 30mΩ 12A G1 G2 G : GATE
D : DRAIN

S1G1
P-Channel -40 55mΩ -8.8A S1 S2 S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS ±20 ±20 V
TC = 25 °C 12 -8.8
Continuous Drain Current ID
TC = 70 °C 8 -5.8 A
1
Pulsed Drain Current IDM 50 -50
Avalanche Current IAS 19 -18
Avalanche Energy L = 0.1mH EAS 20 19 mJ
TC = 25 °C 3
Power Dissipation PD W
TC = 70 °C 2.1
Junction & Storage Temperature Range Tj, Tstg -55 to 150
1
°C
Lead Temperature ( /16” from case for 10 sec.) TL 275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RJC 6 °C / W
Junction-to-Ambient RJA 42 °C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle  1%

ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted)

LIMITS UNIT
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX
STATIC

VGS = 0V, ID = 250A N-Ch 40

Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250A P-Ch -40

VDS = VGS, ID = 250A V

N-Ch 1.7 2.0 3.0
Gate Threshold Voltage VGS(th)
VDS = VGS, ID = -250A P-Ch -1.7 -2.0 -3.0

REV 1.0
1 Oct-21-2009
 P3004ND5G
NIKO-SEM N- & P-Channel Enhancement Mode Field
TO-252-5
Effect Transistor
Halogen-Free & Lead-Free

VDS = 0V, VGS = ±20V N-Ch ±100

Gate-Body Leakage IGSS nA
VDS = 0V, VGS = ±20V P-Ch ±100

VDS = 32V, VGS = 0V N-Ch 1

P-Ch -1
VDS = -32V, VGS = 0V
Zero Gate Voltage Drain Current IDSS A
VDS = 30V, VGS = 0V, TJ = 55 °C N-Ch 10
P-Ch -10
VDS = -30V, VGS = 0V, TJ = 55 °C

VDS = 5V, VGS = 10V N-Ch 50

On-State Drain Current1 ID(ON) A
P-Ch -50
VDS =-5V, VGS = -10V

VGS = 5V, ID = 6A N-Ch 39 50

P-Ch 76 99
VGS = -5V, ID = -4.5A
Drain-Source On-State mΩ
Resistance1 RDS(ON)
VGS = 10V, ID = 7A N-Ch 26 30
P-Ch 47 55
VGS = -10V, ID = -5.5A

VDS = 10V, ID = 7A N-Ch 18

Forward Transconductance1 gfs S
P-Ch 10
VDS = -10V, ID = -5.5A

DYNAMIC
N-Ch 495 643
Input Capacitance Ciss
N-Channel P-Ch 558 725
VGS = 0V, VDS = 10V, f = 1MHz N-Ch 110 143
Output Capacitance Coss
P-Channel P-Ch 250 325 pF
VGS = 0V, VDS = -10V, f = 1MHz N-Ch 41 53
Reverse Transfer Capacitance Crss
P-Ch 60 78
N-Ch 1.8
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω
P-Ch 7

N-Channel N-Ch 12
Total Gate Charge2 Qg
VDS = 0.5V(BR)DSS, VGS = 10V, P-Ch 11
ID = 7A N-Ch 1.8
2
Gate-Source Charge Qgs
P-Channel P-Ch 1.7 nC
VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 1.6
2
Gate-Drain Charge Qgd ID = -5.5A
P-Ch 1.5

REV 1.0
2 Oct-21-2009
 P3004ND5G
NIKO-SEM N- & P-Channel Enhancement Mode Field
TO-252-5
Effect Transistor
Halogen-Free & Lead-Free

N-Ch 1.7 3.2

Turn-On Delay Time2 td(on) N-Channel
P-Ch 5.4 12
VDS = 20V
N-Ch 5.6 10
Rise Time2 tr
ID  1A, VGS = 10V, RGEN = 6Ω P-Ch 7.8 16.5
N-Ch 7.6 14
Turn-Off Delay Time
2
td(off) P-Channel nS
P-Ch 16 30
VDS = -20V
2
N-Ch 2.8 5.5
Fall Time tf
ID  -1A, VGS = -10V, RGEN = 6Ω P-Ch 10 18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C)

IF = 7A, VGS = 0V N-Ch 1.2

1
Forward Voltage VSD V
P-Ch -1.2
IF = -5.5A, VGS = 0V

IF = 7A, dlF/dt = 100A / S N-Ch 40

Reverse Recovery Time trr nS
P-Ch 50
IF = -5.5A, dlF/dt = 100A / S
N-Ch 28
Reverse Recovery Charge Qrr nC
P-Ch 50
1
Pulse test : Pulse Width  300 sec, Duty Cycle  2%.
2
Independent of operating temperature.

REMARK: THE PRODUCT MARKED WITH “P3004ND5G”, DATE CODE or LOT #

REV 1.0
3 Oct-21-2009
 P3004ND5G
NIKO-SEM N- & P-Channel Enhancement Mode Field
TO-252-5
Effect Transistor
Halogen-Free & Lead-Free

N-CHANNEL

Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS= 0V
T A = 125°C
10
Is - Reverse Drain Current(A)

25°C
1

-55°C
0.1

0.01

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Body Diode Forward Voltage(V)

REV 1.0
4 Oct-21-2009
 P3004ND5G
NIKO-SEM N- & P-Channel Enhancement Mode Field
TO-252-5
Effect Transistor
Halogen-Free & Lead-Free

REV 1.0
5 Oct-21-2009
 P3004ND5G
NIKO-SEM N- & P-Channel Enhancement Mode Field
TO-252-5
Effect Transistor
Halogen-Free & Lead-Free

P-CHANNEL

Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS= 0V
-Is - Reverse Drain Current(A)

10

TA = 125°C
1

25°C -55°C
0.1

0.01

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD - Body Diode Forward Voltage(V)

REV 1.0
6 Oct-21-2009
 P3004ND5G
NIKO-SEM N- & P-Channel Enhancement Mode Field
TO-252-5
Effect Transistor
Halogen-Free & Lead-Free

REV 1.0
7 Oct-21-2009
 P3004ND5G
NIKO-SEM N- & P-Channel Enhancement Mode Field
TO-252-5
Effect Transistor
Halogen-Free & Lead-Free

REV 1.0
8 Oct-21-2009