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Silicon NPN Power Transistors

This document provides specifications for the 2SC5386 silicon NPN power transistor. It is housed in a TO-3P(H)IS package and is suitable for high voltage, high speed applications such as horizontal deflection output for high resolution displays and color TVs. Key parameters include a collector-emitter breakdown voltage of 600V, saturation voltage of 3.0V maximum, and current gain ranging from 15 to 35 at 1A collector current. The transistor has a maximum collector current of 8A and storage/fall times of 2.5-3.5μs and 0.15-0.3μs respectively.

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108 views4 pages

Silicon NPN Power Transistors

This document provides specifications for the 2SC5386 silicon NPN power transistor. It is housed in a TO-3P(H)IS package and is suitable for high voltage, high speed applications such as horizontal deflection output for high resolution displays and color TVs. Key parameters include a collector-emitter breakdown voltage of 600V, saturation voltage of 3.0V maximum, and current gain ranging from 15 to 35 at 1A collector current. The transistor has a maximum collector current of 8A and storage/fall times of 2.5-3.5μs and 0.15-0.3μs respectively.

Uploaded by

fabioboog
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

JMnic Product Specification

Silicon NPN Power Transistors 2SC5386

DESCRIPTION
・With TO-3P(H)IS package
・High voltage;high speed
・Low collector saturation voltage

APPLICATIONS
・Horizontal deflection output for high
resolution display,color TV
・High speed switching applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3 Emitter

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 600 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 8 A

ICM Collector current-Peak 16 A

IB Base current 4 A

PC Total power dissipation TC=25℃ 50 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon NPN Power Transistors 2SC5386

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 600 V

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A 3.0 V

VBEsat Base-emitter saturation voltage IC=6A; IB=1.5A 1.5 V

ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA

IEBO Emitter cut-off current VEB=5V; IC=0 10 μA

hFE-1 DC current gain IC=1A ; VCE=5V 15 35

hFE-2 DC current gain IC=6A ; VCE=5V 4.3 7.5

Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 105 pF

fT Transition frequency IE=0.1A ; VCE=10V 1.7 MHz

Switching times

ts Storage time 2.5 3.5 μs


ICP=5A;IB1(end)=1.0A
fH =64kHz
tf Fall time 0.15 0.3 μs

2
JMnic Product Specification

Silicon NPN Power Transistors 2SC5386

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)

3
JMnic Product Specification

Silicon NPN Power Transistors 2SC5386

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