AOD444/AOI444

60V N-Channel MOSFET

General Description Product Summary

The AOD444/AOI444 combine advanced trench MOSFET VDS 60V

technology with a low resistance package to provide ID (at VGS=10V) 12A
extremely low RDS(ON). Those devices are suitable for use RDS(ON) (at VGS=10V) < 60mΩ
in PWM, load switching and general purpose applications. RDS(ON) (at VGS = 4.5V) < 85mΩ

100% UIS Tested

100% Rg Tested

TO252 TO-251A
DPAK IPAK
TopView Bottom View D
TopView Bottom View

D
D
D

S G
S G G
D
G D S
G S S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 12
ID
Current G TC=100°C 9 A
C
Pulsed Drain Current IDM 30
Continuous Drain TA=25°C 4
IDSM A
Current TA=70°C 3
Avalanche Current C IAS, IAR 19 A
Avalanche energy L=0.1mH C EAS, EAR 18 mJ
TC=25°C 20
PD W
Power Dissipation B TC=100°C 10
TA=25°C 2.1
PDSM W
Power Dissipation A TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 17.4 30 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 50 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 4 7.5 °C/W

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 AOD444/AOI444

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V
VDS=48V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 2.4 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 30 A
VGS=10V, ID=12A 47 60
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 85 100
VGS=4.5V, ID=6A 67 85 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 14 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 360 450 540 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 40 61 80 pF
Crss Reverse Transfer Capacitance 16 27 40 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.6 1.4 2.0 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 7.5 10 nC
Qg(4.5V) Total Gate Charge 3.8 5 nC
VGS=10V, VDS=30V, ID=12A
Qgs Gate Source Charge 1.2 nC
Qgd Gate Drain Charge 1.9 nC
tD(on) Turn-On DelayTime 4.2 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=2.5Ω, 3.4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 16 ns
tf Turn-Off Fall Time 2 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 27 35 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 30 nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD444/AOI444

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20

VDS=5V
25 7V
16
6V
20 5V 12
10V

ID(A)
ID (A)

15 4.5V
25°C
8
4V
10
VGS=3.5V 4 125°C
5

0
0
2 3 4 5 6
0 1 2 3 4 5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)

100 2.4

90 Normalized On-Resistance 2.2

VGS=10V
80 2
VGS=4.5V ID=12A
RDS(ON) (mΩ)

1.8
70 17
1.6
60 5
1.4 2
50 VGS=4.5V10
1.2
VGS=10V ID=6A
40 1

30 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E) 18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)

130 1.0E+01
ID=12A
1.0E+00
110
40
125°C 1.0E-01
RDS(ON) (mΩ)

90 125°C
IS (A)

1.0E-02
70 25°C
1.0E-03

50 1.0E-04
25°C
30 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AOD444/AOI444

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 700

VDS=30V 600
8
ID=12A
Ciss
500

Capacitance (pF)
VGS (Volts)

6
400

4 300
Coss
200
2 Crss
100

0 0
0 2 4 6 8 0 5 1015 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 200

10µs 10µs 160 TJ(Max)=175°C

10.0
TC=25°C
RDS(ON) 100µs
Power (W)
ID (Amps)

1ms
120 17
limited DC
1.0 10ms 5
80 2
10
0.1 TJ(Max)=175°C
TC=25°C 40

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=7.5°C/W 40
1

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD444/AOI444

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 25
TA=25°C
IAR (A) Peak Avalanche Current

TA=100°C
20

Power Dissipation (W)

15

10 TA=150°C
TA=125°C 10

0
1
0 25 50 75 100 125 150 175
1 10 100
Time in avalanche, tA (µs) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

16 10000

14 TA=25°C
12 1000
Current rating ID(A)

10 17
Power (W)

8 100 5
2
6 10
4 10

0 1
0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOD444/AOI444

AOD444/AOI4

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & W aveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 0: Aug 2009 www.aosmd.com Page 6 of 6