NPN S I L I C O N T RA N S I S T O R

K I SEMICONDUCTOR C3203

█ APPLICATIONS
HIGH CURRENT APPLICATIONS.

█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92

T stg ——Storage Temperature………………………… -55~150℃

T j ——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………600mW
1―Emitter，E
V CBO——Collector-Base Voltage………………………………35V
2―Collector，C
VCEO——Collector-Emitter Voltage……………………………30V 3―Base，B

V EBO ——Emitter-Base Voltage………………………………5V

I C ——Collector Current……………………………………800mA

█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Min Typ Max Unit Test Conditions

BVCBO Collector-Base Breakdown Voltage 35 V IC=100μA, IE=0

BVCEO Collector-Emitter Breakdown Voltage 30 V IC=10mA, IB=0
BVEBO Emitter-Base Breakdown Voltage 5 V IE=1mA，IC=0
HFE（1） DC Current Gain 100 320 VCE=1V, IC=100mA
HFE（2） DC Current Gain 35 VCE=1V, IC=700mA
VCE(sat) Collector- Emitter Saturation Voltage 0.5 V IC=500mA, IB=20mA
VBE Base-Emitter Voltage 05 0.8 V VCE=1V, IC=10mA
ICBO Collector Cut-off Current 100 nA VCB=35V, IE=0
IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0
fT Current Gain-Bandwidth Product 120 MHz VCE=5V, IC=10mA
Cob Output Capacitance 13 pF VCB=10V, IE=0，f=1MHz

█ HFE Classification

O Y

100—200 160—320