IGBT
A new development in the area of power
MOSFET technology.
It combines the advantages of both MOSFET and
BJT
It has high input impedance like MOSFET and
low on state loss as in BJT
It is free from secondary breakdown
Meta oxide insulated gate transistor-Conductively
modulated field effect transistor-Gain modulated
FET-Insulated gate transistor
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IGBT(Insulated Gate Bipolar Transistor)
Constructed in the same way
as that of MOSFET with a
major difference in the
substrate
n+ layer substrate at the drain
in power MOSFET is
substituted in the IGBT by a
p+ structure called collector
IGBT has thousands of basic
structure cells connected on a
single chip of silicon
When gate is positive w.r.t
emitter and with gate –emitter
voltage more than the
threshold voltage of IGBT, an
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n channel is formed
IGBT(Insulated Gate Bipolar Transistor)
This n channel short circuits the n-region with n+
emitter regions
An electron movement in the n-channel causes
substantial hole injection from p+ substrate layer in
to the epitaxial n-layer
A forward current is established
The three layer p+, n- and p – PNP transistor with
p+ as emitter, n- base and p as collector. Also n-,p
and n+ layers constitute NPN transistor
Here n- serves as base for PNP transistor and also
as collector for NPN transistor
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IGBT(Insulated Gate Bipolar Transistor)
P serves as collector for PNP device and as base
for NPN transistor.
Two and n+ layers constitute NPN transistor
n- serves as base for PNP transistor and also as
collector for NPN transistor
p serves as collector for PNP transistor and as
base for NPN transistor
Two npn and pnp transistors can be connected
together to give the equivalent circuit of an
IGBT
Circuit Elements: Gate, Emitter and Collector 4
Basic Structure, Equivalent structure
and Symbol of IGBT
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IGBT Characteristics
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Transfer Characteristics
Plot of collector current
and gate-emitter voltage
Identical to that of power
MOSFET
When VGE is less than
Vget , IGBT is in the off
state
When the device is off ,
junction J2 blocks forward
voltage and in case reverse
voltage appears across
collector and emitter ,
Junction J1 blocks 7
Static V-I (output)Characteristics
Plot of Ic and Vce
In the forward
direction it is
similar to BJT
characteristics
Here controlling
parameter is Vce
Since IGBT is a
voltage controlled
device
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Switching Characteristics of IGBT
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Switching Characteristics of IGBT
The turn on time – Time between the instants of
forward blocking to forward on state
Ton = tdn + tr
Delay time = time for the collector emitter
voltage to fall from Vce to 0.9 Vce (Vce = initial
collector emitter voltage) = time for the collector
current to rise from its initial leakage current Ice
to 0.1 Ic (Ic is the final value)
Rise time = time during which collector emitter
voltage falls from 0.9 Vce to 0.1 Vce=Time for
the collector to rise from 0.1 Ic to its final value
Ic
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Switching Characteristics of IGBT
After Ton, the collector is Ic and the collector emitter
voltage falls in to small value called conduction drop
(Vces)
Turn off time = tdf + tf1+tf2
Tdf = time during which gate voltage falls from Vce to
threshold voltageVget
As Vce falls to Vget during tdf, the collector Ic falls to
0.9Ic.
At the end of tdf, the collector emitter voltage begins to
rise
Tf1 = time during which collector current falls from
90% to 20% of its initial value= time during which
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collector emitter voltage rises from Vces to 0.1 Vce
Switching Characteristics of IGBT
Tf2 =time during which collector current falls from 20
to 10% of Ic=time during which collector emitter
voltage rises from 0.1 Vce to final value Vce
Applications of IGBT:
Used in medium power applications----ac, dc motor
drives, UPS systems, power supplies and drives for
solenoids , relays and contactors
IGBT –expensive than BJT-but popular due to low
gate drive requirements, lower switching losses and
smaller snubber circuit requirements
IGBT converters -more efficient –less size , cost
IGBT inverter fed IM are widely used-less audio-noise
IGBT are available up to 1200 V ,500 A
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