TEAM-TECH(H.K.

)ELECTRONICS,LTD TG2309
P-Channel Enhancement Mode Field Effect Transistor
z Features z General Description

VDS(V) = -30V, ID = -4.2A, This P-Channel enhancement mode power FETs are produced
RDS(ON) = 52mΩ @VGS = -10V. with high cell density, DMOS trench technology, which is
RDS(ON) = 68mΩ @VGS = -4.5V. especially used to minimize on-state resistance. This device is
High density cell design for low RDS(ON). particularly suited for low voltage application such as portable
equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small
outline surface mount package.

z Pin Configurations

z Absolute Maximum Ratings @TA=25℃ unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage VDSS -30 V

Gate-Source Voltage VGSS ±20 V

Continuous TA=25°C -4.2 A

Drain Current (Note 1) ID
Pulsed (Note 2) -50 A
Total Power Dissipation (Note 1) PD 1000 mW

Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 °C

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z Electrical Characteristics @TA=25℃ unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250μA -30 -34 V

Zero Gate Voltage Drain Current IDSS VDS = -24 V, VGS = 0 V -3 -200 nA

Gate–Body Leakage Current IGSS VGS = ± 20 V, VDS = 0 V ±1.5 ±50 nA

ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID =-250μA -1 -1.3 -3 V

VGS = -10 V, ID = -5 A 52 65
Drain–Source On–State Resistance RDS(ON) mΩ
VGS = -4.5 V, ID = -4 A 68 85

Forward Transconductance GFS VDS = -5 V, ID = -6 A 12 S

DYNAMIC CHARACTERISTICS

Input Capacitance CISS 550

VDS = -15 V, VGS = 0 V, F =

Output Capacitance COSS -- 60 pF
1.0 MHz

Reverse Transfer Capacitance CRSS 50

SWITCHING CHARACTERISTICS

Turn–On Delay Time TD(ON) 8.6

VDS = -15 V, RL = 2.5Ω,
nS
VGS = -10V, RGEN=3Ω
Turn–Off Delay Tim TD(OFF) 28.2

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Diode Forward Voltage VSD VGS = 0 V, IS = -1 A -0.81 V

Notes
1、Pulse width limited by maximum junction temperature.
2、Pulse test: PW≤300μs, duty cycle≤2%.
3、Guaranteed by design, not subject to production testing.
4、Surface Mounted on FR4 Board,T < 5 sec.

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 TEAM-TECH(H.K.)ELECTRONICS,LTD TG2309
z Typical Performance Characteristics (TJ =25 Noted)

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z Package Information

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IMPORTANT NOTICE
The information in this document has been carefully reviewed and is believed to be accurate.
Nonetheless, this document is subject to change without notice. Team-tech assumes no responsibility for
any inaccuracies that may be contained in this document, and makes no commitment to update or to
keep current the contained information, or to notify a person or organization of any update. Team-tech
reserves the right to make changes, at any time, in order to improve reliability, function or design and to
attempt to supply the best product possible.

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