PD - 97214C

IRFB3307ZPbF
IRFS3307ZPbF
Applications
l High Efficiency Synchronous Rectification in
IRFSL3307ZPbF
SMPS
HEXFET® Power MOSFET
l Uninterruptible Power Supply
l High Speed Power Switching D VDSS 75V
l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m:
max. 5.8m:
G
ID (Silicon Limited) 120Ac
Benefits
l Improved Gate, Avalanche and Dynamic S ID (Package Limited) 120A
dv/dt Ruggedness
l Fully Characterized Capacitance and D D
D
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability S S
S
D
D G G
G

TO-220AB D2Pak TO-262

IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF

G D S
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 120c
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 84c A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120
IDM Pulsed Drain Current d 480
PD @TC = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery f 6.7 V/ns
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbxin (1.1Nxm)

Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e 140 mJ
IAR Avalanche Currentd See Fig. 14, 15, 22a, 22b A
EAR Repetitive Avalanche Energy g mJ

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case k ––– 0.65
RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W
RθJA Junction-to-Ambient, TO-220 k ––– 62
RθJA 2
Junction-to-Ambient (PCB Mount) , D Pak jk ––– 40
www.irf.com 1
03/20/08
IRFB/S/SL3307ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.094 ––– V/°C Reference to 25°C, ID = 5mAd
RDS(on) Static Drain-to-Source On-Resistance ––– 4.6 5.8 mΩ VGS = 10V, ID = 75A g
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 150µA
RG(int) Internal Gate Resistance ––– 0.70 ––– Ω
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 75V, VGS = 0V
––– ––– 250 VDS = 75V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 320 ––– ––– S VDS = 50V, ID = 75A
Qg Total Gate Charge ––– 79 110 nC ID = 75A
Qgs Gate-to-Source Charge ––– 19 ––– VDS = 38V
Qgd Gate-to-Drain ("Miller") Charge ––– 24 ––– VGS = 10V g
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 55 ––– ID = 75A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time ––– 15 ––– ns VDD = 49V
tr Rise Time ––– 64 ––– ID = 75A
td(off) Turn-Off Delay Time ––– 38 ––– RG = 2.6Ω
tf Fall Time ––– 65 ––– VGS = 10V g
Ciss Input Capacitance ––– 4750 ––– pF VGS = 0V
Coss Output Capacitance ––– 420 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 190 ––– ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)i ––– 440 ––– VGS = 0V, VDS = 0V to 60V j
Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 410 ––– VGS = 0V, VDS = 0V to 60V h

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 120c A MOSFET symbol D

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– 480 integral reverse G

S
(Body Diode)di p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V g
trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C VR = 64V,
––– 39 59 TJ = 125°C IF = 75A
Qrr Reverse Recovery Charge ––– 42 63 nC TJ = 25°C di/dt = 100A/µs g
––– 56 84 TJ = 125°C
IRRM Reverse Recovery Current ––– 2.2 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Calculated continuous current based on maximum allowable junction „ ISD ≤ 75A, di/dt ≤ 1570A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
temperature. Bond wire current limit is 120A. Note that current … Pulse width ≤ 400µs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Coss while VDS is rising from 0 to 80% VDSS.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.050mH ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994.
above this value. ‰ Rθ is measured at TJ approximately 90°C.

2 www.irf.com
 IRFB/S/SL3307ZPbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
100 4.8V 100 4.8V
BOTTOM 4.5V BOTTOM 4.5V
4.5V

4.5V

10 10

≤60µs PULSE WIDTH ≤60µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
ID = 72A

RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current (A)

100 2.0

T J = 175°C
(Normalized)

T J = 25°C
10 1.5

1 1.0

VDS = 25V
≤60µs PULSE WIDTH
0.1 0.5
2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

100000 12.0
VGS = 0V, f = 1 MHZ
ID= 72A
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
VGS, Gate-to-Source Voltage (V)

10.0 VDS= 60V

Coss = Cds + Cgd
VDS= 38V
C, Capacitance (pF)

10000 8.0 VDS= 15V

Ciss
6.0

Coss
1000 4.0

Crss
2.0

100 0.0
1 10 100 0 10 20 30 40 50 60 70 80 90
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com 3
 IRFB/S/SL3307ZPbF
1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

1000
T J = 175°C
100

100µsec
100
T J = 25°C
10 1msec
10msec
10

DC
1
1
Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.0 0.5 1.0 1.5 2.0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

V(BR)DSS , Drain-to-Source Breakdown Voltage (V)

120 100
Id = 5mA
95
100

90
ID, Drain Current (A)

80
85
60
80
40
75

20 70

0 65
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C) T J , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage

1.2 600
ID
EAS , Single Pulse Avalanche Energy (mJ)

1.0 500 TOP 15A

26A
BOTTOM 75A
0.8 400
Energy (µJ)

0.6 300

0.4 200

0.2 100

0.0 0
20 30 40 50 60 70 80 25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)

Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent
4 www.irf.com
 IRFB/S/SL3307ZPbF
1

D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10
0.05 R1 R2 R3
Ri (°C/W) τi (sec)
R1 R2 R3
τJ τC
0.02 τJ τ
0.1164 0.000088
τ1 τ2 τ3
0.01 0.01 τ1 τ2 τ3 0.3009 0.001312
Ci= τi/Ri 0.2313 0.009191
Ci τi/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100
Allowed avalanche Current vs avalanche
0.01
pulsewidth, tav, assuming ∆ Tj = 150°C and
Duty Cycle =
Tstart =25°C (Single Pulse)
Single Pulse
0.05
Avalanche Current (A)

10
0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

150 Notes on Repetitive Avalanche Curves , Figures 14, 15:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1.0% Duty Cycle 1. Avalanche failures assumption:
125 ID = 75A Purely a thermal phenomenon and failure occurs at a temperature far in
EAR , Avalanche Energy (mJ)

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
100
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
75 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
50 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
25 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25 50 75 100 125 150 175
Iav = 2DT/ [1.3·BV·Zth]
Starting T J , Junction Temperature (°C) EAS (AR) = PD (ave)·tav

Fig 15. Maximum Avalanche Energy vs. Temperature

www.irf.com 5
IRFB/S/SL3307ZPbF
4.5 20
IF = 48A
4.0
VGS(th) , Gate threshold Voltage (V)

V R = 64V

15 TJ = 25°C
3.5
TJ = 125°C
3.0

IRR (A)
2.5 10

2.0 ID = 150µA
ID = 250µA
1.5 ID = 1.0mA 5
ID = 1.0A
1.0

0.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 200 0 200 400 600 800 1000
T J , Temperature ( °C ) diF /dt (A/µs)

Fig 16. Threshold Voltage vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt

20 420
IF = 72A IF = 48A
V R = 64V V R = 64V
340
15 TJ = 25°C TJ = 25°C
TJ = 125°C TJ = 125°C
260
QRR (A)
IRR (A)

10

180

5
100

0 20
0 200 400 600 800 1000 0 200 400 600 800 1000
diF /dt (A/µs) diF /dt (A/µs)

Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt

420
IF = 72A
V R = 64V
340
TJ = 25°C
TJ = 125°C
260
QRR (A)

180

100

20
0 200 400 600 800 1000
diF /dt (A/µs)

Fig. 20 - Typical Stored Charge vs. dif/dt

6 www.irf.com
 IRFB/S/SL3307ZPbF
Driver Gate Drive
D.U.T P.W.
Period D=
P.W.
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚
-
„ +
Recovery
Current
Body Diode Forward
Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS

Fig 21a. Unclamped Inductive Test Circuit Fig 21b. Unclamped Inductive Waveforms

LD
VDS VDS
90%
+
VDD -

D.U.T 10%
VGS VGS
Pulse Width < 1µs
Duty Factor < 0.1% td(on) tr td(off) tf

Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms
Id
Vds

Vgs

L
VCC
DUT Vgs(th)
0
1K

Qgs1 Qgs2 Qgd Qgodr

Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform
www.irf.com 7
IRFB/S/SL3307ZPbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21:: ,17(51$7,21$/ 3$57180%(5
,17+($66(0%/</,1(& 5(&7,),(5
/2*2
Note: "P" in assembly line
position indicates "Lead-Free" '$7(&2'(
$66(0%/< <($5 
/27&2'( :((.
/,1(&

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
8 www.irf.com
 IRFB/S/SL3307ZPbF

D2Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

D2Pak (TO-263AB) Part Marking Information

7+,6,6$1,5)6:,7+ 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5 )6
,17+($66(0%/</,1(/ /2*2
'$7(&2'(
$66(0%/< <($5 
/27&2'( :((.
/,1(/

25
3$57180%(5
,17(51$7,21$/
5(&7,),(5 )6
/2*2 '$7(&2'(
3 '(6,*1$7(6/($')5((
352'8&7237,21$/
$66(0%/< <($5 
/27&2'(
:((.
$ $66(0%/<6,7(&2'(
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
www.irf.com 9
IRFB/S/SL3307ZPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

(;$03/( 7+,6,6$1,5//
/27&2'( 3$57180%(5
,17(51$7,21$/
$66(0%/('21::
5(&7,),(5
,17+($66(0%/</,1(& /2*2
'$7(&2'(
<($5 
$66(0%/<
/27&2'( :((.
/,1(&

25

3$57180%(5
,17(51$7,21$/
5(&7,),(5
/2*2
'$7(&2'(
3 '(6,*1$7(6/($')5((
$66(0%/<
/27&2'( 352'8&7237,21$/
<($5 
:((.
$ $66(0%/<6,7(&2'(

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
10 www.irf.com
 IRFB/S/SL3307ZPbF

D2Pak (TO-263AB) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/08
www.irf.com 11