TLP181

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP181
Office Machine
Unit in mm
Programmable Controllers
AC / DC−Input Module
Telecommunication

The TOSHIBA mini flat coupler TLP181 is a small outline coupler,

suitable for surface mount assembly.
TLP181 consist of a photo transistor optically coupled to a gallium
arsenide infrared emitting diode.

· Collector−emitter voltage: 80V (min.)

· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· Isolation voltage: 3750Vrms (min.)
· UL recognized: UL1577,
file no. E67349
· Option (V4) type
VDE approved: VDE0884 satisfied TOSHIBA 11−4C1
Maximum operating insulation voltage: 565VPK
Weight: 0.09 g
Highest permissible over voltage: 6000VPK

Pin Configuration (top view)

1 6

3 4

1: Anode
3: Cathode
4: Emitter
6: Collector

1 2002-09-25
 TLP181
Current Transfer Ratio
Current Transfer Ratio (%)
(IC / IF)
Classification IF = 5mA, VCE = 5V, Ta = 25°C
Type Marking Of Classification
*1

Min. Max.

(None) 50 600 BLANK, Y, Y■, G, G■, B, B■, GB

Rank Y 50 150 Y, Y■
TLP181 Rank GR 100 300 G, G■
Rank BL 200 600 B, B■
Rank GB 100 600 G, G■, B, B■, GB

*1: EX, Rank GB: TLP181 (GB)

(Note) Application, type name for certification test, please use standard product type name, i, e.
TLP181 (GB): TLP181

2 2002-09-25
 TLP181
Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 50 mA
Forward current detating ∆IF / °C -0.7 (Ta ≥ 53°C) mA / °C
Pulse forward current
LED

IFP 1 A
(100µs pulse, 100pps)
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Emitter-collector valtage VECO 7 V
Collector current IC 50 mA
Detector

Collector power dissipation

PC 150 mW
(1 Circuit)
Collector power dissipation
∆PC / °C -1.5 mW / °C
derating (1 Circuit Ta ≥ 25°C)
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation
∆PT / °C -2.0 mW / °C
derating (Ta ≥ 25°C)
Isolation voltage
BVS 3750 Vrms
(AC, 1min., R.H. ≤ 60%) (Note 1)

(Note 1) Device considered a two-terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 48 V

Forward current IF ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C

3 2002-09-25
 TLP181
Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5 V — — 10 µA
Capacitance CT V = 0, f = 1 MHz — 30 — pF
Collector-emitter
V(BR) CEO IC = 0.5 mA 80 — — V
breakdown voltage
Emitter-collector
V(BR) ECO IE = 0.1 mA 7 — — V
breakdown voltage
Detector

VCE = 48 V, ( Ambient light 0.01 0.1

— µA
below 1000 lx) (2) (10)
Collector dark current ICEO
VCE = 48 V, Ta = 85°C, ( Ambient 2 50
— µA
light below 1000 lx) (4) (50)
Capacitance
CCE V = 0, f = 1 MHz — 10 — pF
(collector to emitter)

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn. Typ. Max. Unit

IF = 5 mA, VCE = 5 V 50 — 600

Current transfer ratio IC / IF %
Rank GB
100 — 600

IF = 1 mA, VCE = 0.4 V — 60 —

Saturated CTR IC / IF (sat) %
Rank GB 30 — —
IC = 2.4 mA, IF = 8 mA — — 0.4
Collector-emitter
VCE (sat) IC = 0.2 mA, IF = 1 mA — 0.2 — V
saturation voltage
Rank GB — — 0.4
Off-state collector current IC (off) VF = 0.7V, VCE = 48 V — 1 10 µA

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance
CS VS = 0V, f = 1 MHz — 0.8 — pF
(input to output)
Isolation resistance RS VS = 500 V, R.H. ≤ 60% 1×1012 1014 — Ω
AC, 1 minute 3750 — —
Vrms
Isolation voltage BVS AC, 1 second, in oil — 10000 —
DC, 1 minute, in oil — 10000 — Vdc

4 2002-09-25
 TLP181
Swiching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr — 2 —
Fall time tf VCC = 10 V, IC = 2 mA — 3 —
µs
Turn-on time ton RL = 100Ω — 3 —
Turn-off time toff — 3 —
Turn-on time tON — 2 —
RL = 1.9 kΩ (Fig.1)
Storage time ts — 25 — µs
VCC = 5 V, IF = 16 mA
Turn-off time tOFF — 40 —

Fig. 1 Switching time test circuit

IF VCC IF
RL tS
VCE 4.5V
VCE
0.5V

tON tOFF

5 2002-09-25
 TLP181

IF – Ta PC – Ta
100 200

80 160

Allowable collector power

dissipation PC (mW)
Allowable forward current

60 120
IF (mA)

40 80

20 40

0 0
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

IFP – DR IF – VF
3000 100
Pulse width ≤ 100µs
IFP (mA)

Ta = 25°C
1000
IF (mA)

10
500
300
Pulse forward current

1
Forward current

100

50 0.1
30

0.01
10
-3 -2 -1 0 25
3 10 3 10 3 10 3 10 85°C -25°C
°C
Duty cycle ratio DR 0.001
0 0.4 0.8 1.2 1.6 2

Forward voltage VF (V)

∆VF / ∆Ta – IF IFP – VFP

-3.2 1000
coefficient ∆VF / ∆Ta (mV / °C)

IFP (mA)

500
Forward voltage etemperature

-2.8
300

-2.4
100
Pulse forward current

-2.0 50
30
-1.6

10
-1.2
Pulse width ≤ 10µs
5
Repetitive
-0.8 3
frequency = 100Hz
Ta = 25°C
-0.4 1
0.1 0.3 0.5 1 3 5 10 30 50 0.6 1.0 1.4 1.8 2.2 2.6 3.0

Forward current IF (mA) Pulse forward voltage VFP (V)

6 2002-09-25
 TLP181

IC – VCE IC – VCE
50 30
Ta = 25°C Ta = 25°C
50mA
50mA
(mA)

(mA)
40 40mA
30mA
20mA 30mA
15mA 20
Collector current IC

Collector current IC
30 20mA
10mA

PC (MAX.) 10mA
20
10 5mA
IF = 5mA

10
2mA

0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC – IF ICEO – Ta
1
10
Ta = 25°C
100

50
(mA)

Collector dark current ID(ICEO) (µA)

30 0
10
Collector current IC

10 Sample A

5
3 -1
10 VCE = 48V
Sample B
1
24V
0.5
VCE = 10V 10V
0.3 10
-2
VCE = 5V
5V
VCE = 0.4V
0.1
0.1 0.3 0.5 1 3 5 10 30 50

Forward current IF (mA) -3

10

-4
10
0 20 40 60 80 100

IC / IF – IF Ambient temperature Ta (°C)

1000
Ta = 25°C

500

300
Current transfer ratio

Sample A
IC / IF (%)

100
Sample B

50

30
VCE = 10V
VCE = 5V
VCE = 0.4V
10
0.1 0.3 0.5 1 3 5 10 30 50

Forward current IF (mA)

7 2002-09-25
 TLP181

VCE(sat) – Ta IC – Ta
0.24 100
IF = 1mA VCE = 5V
IC = 0.2mA
50 IF = 25mA
Collector-emitter saturation

0.20

(mA)
voltage VCE(sat) (V)

30
10mA
0.16

Collector current IC
5mA
0.12 10

5
0.08
3

0.04

1mA
0 1
-40 -20 0 20 40 60 80 100

Ambient temperature Ta (°C) 0.5

0.5mA
0.3

0.1
-20 0 20 40 60 80 100
Switching Time – RL Ambient temperature Ta (°C)
1000
Ta = 25°C
IF = 16mA
500 VCC = 5V

300 Switching Time – Ta

160
tOFF

50
tOFF
100
30
ts
Switching time (µs)

50 ts
Switching time (µs)

10
30

3
tON
10

1
5
0.5
3
0.3
IF = 16mA
tON
VCC = 5V
RL = 1.9kΩ
1 0.1
1 3 5 10 30 50 100 -20 0 20 40 60 80 100

Load resistance RL (kΩ) Ambient temperature Ta (°C)

8 2002-09-25
 TLP181

RESTRICTIONS ON PRODUCT USE 000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

9 2002-09-25