ELL211 Homework 4 (20 pts)
1. An abrupt silicon pn junction at zero bias has dopant concentrations of Na =1017 cm-3 and Nd =5 x1015 cm-3. T = 300 K.
(a) Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level.
(b) Sketch the equilibrium energy band diagram for the junction and determine Vbi from the diagram and the results of part (a).
(c) Calculate Vbi using Equation and compare the results to part (b).
Problems
(d) Determine xn, xp, and the peak electric field for this junction.
a d N $N
2. A silicon PIN junction has the doping profile shown in the figure. The “I” corresponds to an ideal (Nd $ Na ) (cm$3)
intrinsic region in which there is no impurity doping concentration. A reverse-biased
Na0 voltage is 5 # 1015
applied to the PIN junction so that the total depletion width extends from -2 µm to +2 µm. (a) Using
x0 !1 !2
Poisson’s equation, calculate the magnitude of the electric fi eld at x = 0. (b) Sketch the electric
$2 $1
field through the PIN junction. (c) Calculate the reverse-biased voltageNd0 that must be applied. x x (!m)
$ $5 # 1015
2
3. Design an abrupt silicon n+p junction diode that has a reverse breakdown
$Nd0 voltage of 80 V.
i region
4. An ideal germanium pn junction diode has the following parameters:, Nd =4x1015 cm-3 Nd =2x1017 cm-3, Dp =48 cm2/s, Dn = 90
Figure P7.33 | Figure for Problem 7.33. Figure P7.34 | Figure for Problem 7.34.
-4
cm2/s, tp0 =tn0 = 2µs, and A=10 cm2. Determine the diode current 7.30
for A(a)
silicon p!n junction hasvoltage
a forward-bias doping concentrations of Na (b)
of 0.25 V and "2a 1017 cm$3 and Nd "
# reverse-biased
2 # 1015 cm$3. The cross-sectional area is 10$5 cm2. Calculate (a) Vbi and (b) the junc-
voltage of 0.25 V. The low injection limit is defined as the condition when the minority carrier concentration is 1/10 the majority
tion capacitance at (i) VR " 1 V, (ii) VR " 3 V, and (iii) VR " 5 V. (c) Plot 1!C 2 versus
carrier concentration. For what voltage is this limit reached. VR and show that the slope can be used to find Nd and the intercept at the voltage axis
yields Vbi.
7.31 The total junction capacitance of a GaAs pn junction at T " 300 K is found to be
5. Consider, as shown in Figure, a uniformly doped silicon pn junction at T = 300 K with impurity doping concentrations of N =Nd = 5
1.10 pF at VR " 1 V. The doping concentration in one region is measured anda found
=1015 cm-3 and minority carrier lifetimes of tn0 = tp0 =t0 = 10-7 s. A reverse-biased
to be 8 # 1016 voltage
cm$3, and = 10 potential
oftheVRbuilt-in V is applied.
is foundA
to light
be Vbi "source
1.20 [Link] incident
Determine
only on the space charge region, producing an excess carrier 328 (a) therate
generation doping ofing’ = 4 H Ax 10
the Cother Pregion
T E19Rcm -3 The
of8 the -1 junction
spn . pn and (b)
Junction
Calculate thegeneration
Diode
the cross-sectionalcurrent
area.
(c) The reverse-biased voltage is changed and the capacitance is found to be 0.80 pF.
density. What is the value of VR?
7.32 Examine how the capacitance C% and the function (1/C%)2 vary withIllumination reverse-biased
6. Calculate the small-signal diffusion capacitance and diffusion resistance voltage of
VR asa the dopingpn
silicon concentrations
junction diode change. In particular, consider these plots ver-
sus Na for Na & 100 Nd and versus Nd for Nd & 100 Na.
biased at IDQ =1.2 mA. Assume the minority carrier lifetimes are 0.5 µs in both the n and p regions.
*7.33 A pn junction has the doping profile shown in Figure P7.33. Assume that xn ' x0 for
all reverse-biased voltages. (a) What is the built-in potential across the junction?
7. We want to consider the effect of a series resistance on the forward-bias (b) For the abrupt required
voltage junction approximation,
to achievesketch p
a the charge density through the njunc-
tion. (c) Derive the expression for the electric field through the space charge region.
particular diode current. (a) Assume the reverse-saturation current in a diode is Is = 10 A at T = 300 K.
-10
*7.34 A silicon PIN junction has the doping profile shown in Figure P7.34. The “I” cor-
The resistivity of the n region is 0.2 Ω-cm and the resistivity of the p region
responds isto 0.1 Ω-cm.
an ideal Assume
intrinsic region inthe which there is no impurity doping W concentra-
-2
length of each neutral region is 10 cm and the cross-sectional area is tion. 2 x 10 -5
cm2. Determine
A reverse-biased voltage is the
applied to the PIN junction so that the #V total
R % depletion
required applied voltage to achieve a current of 10mA (i) Ignoring Series width resistance
extends from (ii)Considering
$2 !m to !2 !m. (a) Using Poisson’s equation, calculate the
Series Resistance/ magnitude of the electric field at x " 0. (b) Sketch the electric Figurefield
P8.35
through the PIN
| Figure for
junction. (c) Calculate the reverse-biased voltage that must be applied.
Problem 8.35 and 8.36.
8. Consider a diode with a junction capacitance of 18 pF at zero Section
bias and7.44.2 pFJunction Breakdown
8.35 Consider, as
at a reverse-biased shown in
voltage VR =10P8.35,
ofFigure V. Thea uniformly
minority doped silicon pn junct
carrier lifetimes are 10-7 s. The diode is switched from a forward 7.35
bias with a current
Consider a silicon nof
! 2 mA
p junctionto
300
T !diode. K with impurity voltage
a reverse-biased doping
The critical electric
concentrations
field for of 10 V in #7
breakdown
of N ! Nd ! 5 " 1015
sili- a
applied through a 10 kΩ resistor. Estimate the turn-off time. con is approximately Ecrit " minority carrier
4 # 10 5 V/cm. lifetimestheofmaximum
Determine !n0 ! !p0 p-type
! !0 ! 10 s. A reverse-biased v
doping
VR ! 10 Vvoltage
concentration such that the breakdown is applied.
is (a) A
40light
V andsource
(b) 20 is
[Link] only on the space charg
7.36 Design an abrupt silicon n!pducing
junctionandiode
excess
thatcarrier generation
has a reverse rate ofvoltage
breakdown g$ ! 4of" 1019 cm#3 s#1. Calc
9. Consider a contact between Al and n Si doped at Nd = 1016 cm 3. T = 30080 V. K. eration current density.
(a) Draw the energy-band diagrams of the two materials before the 7.37 junction is formed.
(a) The n-type 8.36
doping (b) ADraw
concentration the
in anideal
long silicon energy
pn junction
abrupt p!n GaAs band
diode at zero
has
junction bias
the following
diode is Nd " parameters: Nd ! 10
after the junction is formed. (c) Calculate B0, xd, and Emax for part (b) 1016 cm$3. Determine the breakdown
Na ! 3 " voltage.
1016 cm(b)#3Repeat
, !n0 !part
!p0 (a)
! !for
0 ! "#710s,15 D
Nd10 cmn !. 18 cm /s, and Dp !
$3 2
light source is incident on the space charge region such as shown in Fig
*Asterisks next to problems indicate problems that are more difficult.
ducing a generation current density of JG ! 25 mA /cm2. The diode is o
10. Both Schottky barrier diodes and ohmic contacts are to be fabricated by depositing a particular metalcurrent
The generation on a silicon integrated
density forward biasescircuit.
the junction, inducing a f
The work function of the metal is 4.5 V. Considering the ideal metal–semiconductor contact, determine
current the allowable
in the opposite range
direction to of doping
the generation current. A steady-state
concentrations for each type of contact. Consider both p- and n-type silicon regions. reached when the generation current density and forward-bias current de
in magnitude. What is the induced forward-bias voltage at this steady-st
nea29583_ch07_241-[Link] 273
Section 8.3 Small-Signal Model of the pn Junction
8.37 (a) Calculate the small-signal diffusion capacitance and diffusion resist
con pn junction diode biased at IDQ ! 1.2 mA. Assume the minority car
are 0.5 " s in both the n and p regions. (b) Repeat part (a) for the case w
is biased at IDQ ! 0.12 mA.
8.38 Consider the diode described in Problem 8.37. A sinusoidal signal volta
value of 50 mV is superimposed on the dc forward-bias voltage. Determ
nitude of charge that is being alternately charged and discharged in the
8.39 Consider a p% n silicon diode at T ! 300 K. The diode is forward biased
of 1 mA. The hole lifetime in the n region is 10#7 s. Neglecting the depl
tance, calculate the diode impedance at frequencies of 10 kHz, 100 kHz
10 MHz.
8.40 Consider a silicon pn junction with parameters as described in Problem
culate and plot the depletion capacitance and diffusion capacitance over
range #10 & Va & 0.75 V. (b) Determine the voltage at which the two
are equal.
8.41 Consider a p% n silicon diode at T ! 300 K. The slope of the diffusion c
versus forward-bias current is 2.5 " 10#6 F /A. Determine the hole lifeti
diffusion capacitance at a forward-bias current of 1 mA.
