Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - 25 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
ICsat Collector saturation current 6.0 - A
tf Fall time ICM = 6.0 A; IB(end) = 0.85 A 0.2 0.35 µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c
case
1 base
2 collector
b
3 emitter

case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - 25 A
IB Base current (DC) - 6 A
IBM Base current peak value - 9 A
-IB(AV) Reverse base current average over any 20 ms period - 150 mA
-IBM Reverse base current peak value 1 - 6 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W

1 Turn-off current.

November 1995 1 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
VBEsat Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V
hFE DC current gain IC = 100 mA; VCE = 5 V 6 13 26
hFE IC = 6 A; VCE = 5 V 5 7 10

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (32 kHz line ICM = 6.0 A; LC = 330 µH; Cfb = 9 nF;
deflection circuit) IB(end) = 0.85 A; LB = 3.45 µH;
-VBB = 4 V; (-dIB/dt = 1.2 A / µs)
ts Turn-off storage time 3.0 4.0 µs
tf Turn-off fall time 0.2 0.35 µs
Switching times (16 kHz line ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF;
deflection circuit) IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
ts Turn-off storage time 4.5 5.5 µs
tf Turn-off fall time 0.35 0.5 µs

2 Measured with half sine-wave voltage (curve tracer).

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

ICM
TRANSISTOR
+ 50v
100-200R IC DIODE

IB IBend
Horizontal
t
Oscilloscope
10us 13us
Vertical
32us

100R 1R VCE
6V
30-60 Hz
t

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms (32 kHz).

IC / mA ICM
90 %

IC

250
10 %
200
tf t
ts
IB
100 IBend

t
0
VCE / V min

VCEOsust - IBM

Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times definitions.

ICM + 150 v nominal

TRANSISTOR
adjust for ICM
IC DIODE

Lc
IB IBend

20us 26us
IBend LB T.U.T. BY228
Cfb
64us

VCE -VBB

Fig.3. Switching times waveforms (16 kHz). Fig.6. Switching times test circuit.

November 1995 3 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

hFE VBESAT / V
100 1.2
Tj = 25 C
Tj = 25 C
1.1 Tj = 125 C
5V Tj = 125 C

10 0.9
1V IC=
0.8
8A
6A
0.7
5A
4A
1 0.6
0.1 1 10 100 0 1 2 3 4
IC / A IB / A
Fig.7. Typical DC current gain. hFE = f (IC) Fig.10. Typical base-emitter saturation voltage.
parameter VCE VBEsat = f (IB); parameter IC

VBESAT / V VCESAT / V
1.2 10
Tj = 25 C Tj = 25 C
1.1 Tj = 125 C
Tj = 125 C
1

0.9 8A
0.8 1
6A
0.7 IC/IB=
3 5A
0.6
4
IC = 4 A
0.5 5
0.4 0.1
0.1 1 10 0.1 1 10
IC / A IB / A
Fig.8. Typical base-emitter saturation voltage. Fig.11. Typical collector-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB VCEsat = f (IB); parameter IC

VCESAT / V Eoff / uJ
1 1000
IC/IB =
0.9
5
0.8 IC = 6 A
4 32 kHz
0.7
3
0.6 5A 16 kHz
0.5 100
Tj = 25 C
0.4 Tj = 125 C
0.3
0.2
0.1
0 10
0.1 1 10 100 0.1 1 10
IC / A IB / A
Fig.9. Typical collector-emitter saturation voltage. Fig.12. Typical turn-off losses. Tj = 85˚C
VCEsat = f (IC); parameter IC/IB Eoff = f (IB); parameter IC; parameter frequency

November 1995 4 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

ts, tf / us PD% Normalised Power Derating

12 120
with heatsink compound
11 ts 110
16 kHz
10 100
9 90
8 80
7 70
6 60
5 IC = 50
4 6A 40
3 30
2 5A 20
1 tf 10
0 0
0.1 1 10 0 20 40 60 80 100 120 140
IB / A Ths / C
Fig.13. Typical collector storage and fall time. Fig.15. Normalised power dissipation.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz PD% = 100⋅PD/PD 25˚C = f (Ths)

ts, tf / us Zth / (K/W)

12 10
11
32 kHz
10
0.5
9 1
8 ts 0.2
0.1
7
0.05
6 0.1
5 0.02
IC =
4
6A PD tp tp
3 0.01 D=
T
2 5A
1 tf D=0 t
T
0 0.001
0.1 1 10 1E-06 1E-04 1E-02 1E+00
IB / A t/s
Fig.14. Typical collector storage and fall time. Fig.16. Transient thermal impedance.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz Zth j-hs = f(t); parameter D = tp/T

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

IC / A BU2520AF
100

tp =

ICM = 0.01
30 us

ICDC
10

100 us

Ptot
1

1 ms

0.1

10 ms

DC

0.01
1 10 100 1000 VCE / V

Fig.17. Forward bias safe operating area. Ths = 25 ˚C

ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.

November 1995 6 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

MECHANICAL DATA

Dimensions in mm
15.3 max 5.2 max
Net Mass: 5.5 g
0.7 3.1
7.3 3.3 3.2

o
6.2 45
5.8

21.5
max
seating
plane

3.5 max
3.5 not tinned

15.7
min

1 2 3
2.1 max 1.2 0.7 max
1.0
0.4 M 2.0
5.45 5.45

Fig.18. SOT199; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

November 1995 7 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

November 1995 8 Rev 1.200