2MBI100N-060 IGBT Module
600V / 100A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Equivalent Circuit Schematic
Item Symbol Rating Unit
C2E1
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltaga VGES ±20 V C1 E2
Collector Continuous IC 100 A
current 1ms IC pulse 200 A
Continuous -IC 100 A
¤ ¤
1ms -IC pulse 200 A
Max. power dissipation PC 400 W
Operating temperature Tj +150 °C
G1 E1 G2 E2
Storage temperature Tstg -40 to +125 °C
¤ Current control circuit
Isolation voltage Vis AC 2500 (1min.) V
Screw torque Mounting *1 3.5 N·m
Terminals *1 3.5 N·m
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES – – 1.0 VGE=0V, VCE=600V mA
Gate-Emitter leakage current IGES – – 15 VCE=0V, VGE=±20V µA
Gate-Emitter threshold voltage VGE(th) 4.5 – 7.5 VCE=20V, IC=100mA V
Collector-Emitter saturation voltage VCE(sat) – – 2.8 VGE=15V, IC=100A V
Input capacitance Cies – 6600 – VGE=0V pF
Output capacitance Coes – 1470 – VCE=10V
Reverse transfer capacitance Cres – 670 – f=1MHz
Turn-on time ton – 0.6 1.2 VCC=300V µs
tr – 0.2 0.6 IC=100A
Turn-off time toff – 0.6 1.0 VGE=±15V
tf – 0.2 0.35 RG=24 ohm
Diode forward on voltage VF – – 3.0 IF=100A, VGE=0V V
Reverse recovery time trr – – 0.3 IF=100A µs
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Thermal resistance Rth(j-c) – – 0.31 IGBT °C/W
Rth(j-c) – – 0.7 Diode °C/W
Rth(c-f)*2 – 0.05 – the base to cooling fin °C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI100N-060 IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C
200 200
150
Collector current : Ic [A]
150
Collector current : Ic [A]
100 100
50 50
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C Tj=125°C
10 10
VCE [V]
VCE [V]
8 8
Collector-Emitter voltage :
Collector-Emitter voltage :
6 6
4 4
2 2
0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Switching time vs. Collector current
Vcc=300V, RG=24 ohm, VGE=±15V, Tj=25°C Vcc=300V, RG=24 ohm, VGE=±15V, Tj=125°C
1000 1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
100 100
10 10
0 25 50 75 100 125 150 0 25 50 75 100 125 150
Collector current : Ic [A] Collector current : Ic [A]
2MBI100N-060 IGBT Module
Switching time vs. RG Dynamic input characteristics
Vcc=300V, Ic=100A, VGE=±15V, Tj=25°C Tj=25°C
500 25
1000
Switching time : ton, tr, toff, tf [n sec.]
400
Collector-Emitter voltage : VCE [V]
20
Gate-Emitter voltage : VGE [V]
300 15
100 200 10
100 5
10 00 0
10 30 50 100 0 100 200 300 400 500 600
Gate resistance : RG [ohm] Gate charge : Qg [nC]
Forward current vs. Forward voltage Reverse recovery characteristics
VGE=0V trr, Irr, vs. IF
250
200
Reverse recovery time : trr [n sec.]
Reverse recovery current : Irr [A]
100
(Forward current : IF [A] )
Collector current : -Ic [A]
150
50
100
50
0 10
0 1 2 3 4 0 25 50 75 100 125 150
Emitter-Collector voltage VECD [V] Forward current : IF [A]
(Forward voltage : VF [V])
Switching loss vs. Collector current Reversed biased safe operating area
< 15V, Tj <
+VGE=15V, -VGE = = 125°C, RG >
= 24 ohm
Vcc=300V, RG=24 ohm, VGE=±15V
10 1000
Switching loss : Eon, Eoff, Err [mJ/cycle]
8 800
Collector current : Ic [A]
6 600
4 400
2 200
0 0
0 25 50 75 100 125 150 0 100 200 300 400 500 600
Collector current : Ic [A] Collector-Emitter voltage : VCE [V]
2MBI100N-060 IGBT Module
Capacitance vs. Collector-Emitter voltage
Transient thermal resistance Tj=25°C
1
10
Capacitance : Cies, Coes, Cres [nF]
Thermal resistance : R th (j-c) [°C/W]
0.1
0.01 0.1
0.001 0.01 0.1 1 0 5 10 15 20 25 30 35
Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V]
Outline Drawings, mm
mass : 180g
