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ZTX550/551 Transistor Specifications

This document provides specifications for two medium power transistor models: ZTX550 and ZTX551. It includes typical characteristics curves showing collector current, saturation voltage, and gain over a range of currents. It also lists absolute maximum ratings, features, and electrical characteristics for each transistor including breakdown voltages, current ratings, power dissipation limits, and operating temperature ranges.

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heruye mulugeta
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182 views2 pages

ZTX550/551 Transistor Specifications

This document provides specifications for two medium power transistor models: ZTX550 and ZTX551. It includes typical characteristics curves showing collector current, saturation voltage, and gain over a range of currents. It also lists absolute maximum ratings, features, and electrical characteristics for each transistor including breakdown voltages, current ratings, power dissipation limits, and operating temperature ranges.

Uploaded by

heruye mulugeta
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

ZTX550 PNP SILICON PLANAR ZTX550

ZTX551 MEDIUM POWER TRANSISTORS ZTX551


ISSUE 1 – MARCH 94
TYPICAL CHARACTERISTICS FEATURES
* 60 Volt VCEO
100 * 1 Amp continuous current
-0.8 * Ptot= 1 Watt

hFE - Normalised Gain (%)


80
-0.6
C
VCE(sat) - (Volts)

ZTX551
ZTX550 60 B
E
-0.4 ZTX551
IC/IB=10
40 E-Line
-0.2 TO92 Compatible
20
ABSOLUTE MAXIMUM RATINGS.
0 -0.01 -0.1 -1 -10 -0.001 -0.01 -0.1 -1 -10
PARAMETER SYMBOL ZTX550 ZTX551 UNIT
Collector-Base Voltage VCBO -60 -80 V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector-Emitter Voltage VCEO -45 -60 V
VCE(sat) v IC hFE v IC Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC -1 A

-1.0
Power Dissipation: at Tamb=25°C Ptot 1 W
-1.4
derate above 25°C 5.7 mW/ °C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
VBE - (Volts)

-1.2 -0.9
VBE(sat) - (Volts)

-1.0 -0.8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).


PARAMETER SYMBOL ZTX550 ZTX551 UNIT CONDITIONS.
-0.8 -0.7
MIN. MAX. MIN. MAX.
Collector-Base V(BR)CBO -60 -80 V IC=-100µ A
-0.6 -0.6
-0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 Breakdown Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter VCEO(sus) -45 -60 V IC=-10mA*
Sustaining Voltage
VBE(on) v IC VBE(sat) v IC
Emitter-Base V(BR)EBO -5 -5 V IE=-100µ A
Breakdown Voltage
Single Pulse Test at Tamb=25°C
10
Collector Cut-Off ICBO -0.1 µA VCB=-45V
Current -0.1 µA VCB=-60V
IC - Collector Current (Amps)

Emitter Cut-Off IEBO -0.1 -0.1 µA VEB=-4V


Current
ZTX550

1
Collector-Emitter VCE(sat) -0.25 -0.35 V IC=-150mA,
ZTX551

D.C.
1s
Saturation Voltage IB=-15mA*
100ms
10ms
0.1 1.0ms
0.3ms
Base-Emitter VBE(sat) -1.1 -1.1 V IC=-150mA,
0.1ms Saturation Voltage IB=-15mA*
Static Forward hFE 100 300 50 150 IC=-150mA,
0.01 Current Transfer 15 10 VCE=-10V*
0.1 1 10 100 Ratio IC=-1A, VCE=-10V*
VCE - Collector Voltage (Volts)
Transition fT 150 150 MHz IC=-50mA, VCE=-10V
Safe Operating Area Frequency f=100MHz

3-195 3-194
ZTX550 PNP SILICON PLANAR ZTX550
ZTX551 MEDIUM POWER TRANSISTORS ZTX551
ISSUE 1 – MARCH 94
TYPICAL CHARACTERISTICS FEATURES
* 60 Volt VCEO
100 * 1 Amp continuous current
-0.8 * Ptot= 1 Watt

hFE - Normalised Gain (%)


80
-0.6
C
VCE(sat) - (Volts)

ZTX551
ZTX550 60 B
E
-0.4 ZTX551
IC/IB=10
40 E-Line
-0.2 TO92 Compatible
20
ABSOLUTE MAXIMUM RATINGS.
0 -0.01 -0.1 -1 -10 -0.001 -0.01 -0.1 -1 -10
PARAMETER SYMBOL ZTX550 ZTX551 UNIT
Collector-Base Voltage VCBO -60 -80 V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector-Emitter Voltage VCEO -45 -60 V
VCE(sat) v IC hFE v IC Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC -1 A

-1.0
Power Dissipation: at Tamb=25°C Ptot 1 W
-1.4
derate above 25°C 5.7 mW/ °C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
VBE - (Volts)

-1.2 -0.9
VBE(sat) - (Volts)

-1.0 -0.8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).


PARAMETER SYMBOL ZTX550 ZTX551 UNIT CONDITIONS.
-0.8 -0.7
MIN. MAX. MIN. MAX.
Collector-Base V(BR)CBO -60 -80 V IC=-100µ A
-0.6 -0.6
-0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 Breakdown Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter VCEO(sus) -45 -60 V IC=-10mA*
Sustaining Voltage
VBE(on) v IC VBE(sat) v IC
Emitter-Base V(BR)EBO -5 -5 V IE=-100µ A
Breakdown Voltage
Single Pulse Test at Tamb=25°C
10
Collector Cut-Off ICBO -0.1 µA VCB=-45V
Current -0.1 µA VCB=-60V
IC - Collector Current (Amps)

Emitter Cut-Off IEBO -0.1 -0.1 µA VEB=-4V


Current
ZTX550

1
Collector-Emitter VCE(sat) -0.25 -0.35 V IC=-150mA,
ZTX551

D.C.
1s
Saturation Voltage IB=-15mA*
100ms
10ms
0.1 1.0ms
0.3ms
Base-Emitter VBE(sat) -1.1 -1.1 V IC=-150mA,
0.1ms Saturation Voltage IB=-15mA*
Static Forward hFE 100 300 50 150 IC=-150mA,
0.01 Current Transfer 15 10 VCE=-10V*
0.1 1 10 100 Ratio IC=-1A, VCE=-10V*
VCE - Collector Voltage (Volts)
Transition fT 150 150 MHz IC=-50mA, VCE=-10V
Safe Operating Area Frequency f=100MHz

3-195 3-194

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