MBR20200CT

Switch‐mode
Power Rectifier
Dual Schottky Rectifier

Features and Benefits http://onsemi.com

• Low Forward Voltage
SCHOTTKY BARRIER
• Low Power Loss/High Efficiency
• High Surge Capacity RECTIFIER
• 175°C Operating Junction Temperature 20 AMPERES, 200 VOLTS
• 20 A Total (10 A Per Diode Leg)
• This is a Pb-Free Device* 1
2, 4
Applications 3
• Power Supply − Output Rectification
• Power Management 4

• Instrumentation
Mechanical Characteristics TO−220
• Case: Epoxy, Molded CASE 221A
PLASTIC
• Epoxy Meets UL 94, V−0 @ 0.125 in STYLE 6
• Weight: 1.9 Grams (Approximately)
1
• Finish: All External Surfaces Corrosion Resistant and Terminal 2
3
Leads are Readily Solderable
• Lead Temperatures for Soldering Purposes: 260°C Max. for MARKING DIAGRAM
10 Seconds
• ESD Rating: Human Body Model 3B
Machine Model C

AYWW
MBR20200CTG
AKA

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Diode Polarity

ORDERING INFORMATION

Device Package Shipping

*For additional information on our Pb−Free strategy and soldering details, please MBR20200CTG TO−220 50 Units / Rail
download the ON Semiconductor Soldering and Mounting Techniques
(Pb−Free)
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

September, 2014 − Rev. 10 MBR20200CT/D
 MBR20200CT

MAXIMUM RATINGS (Per Leg)

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current (TC = 161°C) Per Leg IF(AV) 10 A
Per Package 20

Peak Repetitive Forward Current per Leg IFRM 20 A

(Square Wave, 20 kHz, TC = 158°C)

Non-Repetitive Peak Surge Current IFSM 150 A

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ −65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS
Characteristic Condition Symbol Value Unit
Maximum Thermal Resistance, Junction-to-Case Minimum Pad RqJC 2.0 °C/W
Maximum Thermal Resistance, Junction-to-Ambient Minimum Pad RqJA 60.0 °C/W

ELECTRICAL CHARACTERISTICS (Per Leg)

Characteristic Symbol Min Typical Max Unit
Maximum Instantaneous Forward Voltage (Note 1) VF V
(IF = 10 A, TJ = 25°C) − 0.80 0.90
(IF = 10 A, TJ = 125°C) − 0.66 0.80
(IF = 20 A, TJ = 25°C) − 0.89 1.00
(IF = 20 A, TJ = 125°C) − 0.76 0.90
Maximum Instantaneous Reverse Current (Note 1) IR mA
(Rated dc Voltage, TJ = 25°C) − 0.0002 1.0
(Rated dc Voltage, TJ = 125°C) − 0.4 50
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

DYNAMIC CHARACTERISTICS (Per Leg)

Characteristic Symbol Value Unit
Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz) CT 500 pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

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 MBR20200CT

100 100
IF, INSTANTANEOUS FORWARD

IF, INSTANTANEOUS FORWARD

175°C
150°C 175°C
CURRENT (A)

CURRENT (A)
125°C 150°C
25°C
10 10
125°C

100°C 100°C

25°C
1 1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

IF(AV), AVERAGE FORWARD CURRENT (A)

10,000 20
18
TJ = 150°C
1,000 16 dc
IR , REVERSE CURRENT ( μ A)

TJ = 125°C 14
100
TJ = 100°C 12
SQUARE
10 10
8
1 6
4
0.1
TJ = 25°C 2
0
0.01
0 20 40 60 80 100 120 140 160 180 200 140 145 150 155 160 165 170 175 180

VR, REVERSE CURRENT (V) TC, CASE TEMPERATURE (°C)

Figure 3. Typical Reverse Current (Per Leg) Figure 4. Current Derating, Case, Per Leg

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 MBR20200CT

IF(AV), AVERAGE FORWARD CURRENT (A)

20 26

PF(AV), AVERAGE POWER DISSIPATION

RJA = 16°C/W 24 TJ = 175°C
18
RJA = 60°C/W 22
16 No Heatsink
20 SQUARE
14 18 WAVE
12 16
dc 14
10

(w)
12
8 SQUARE 10 dc
WAVE 8
6
6
4
4
2 2
0 0
0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 20 22 24 26
TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A)

Figure 5. Current Derating, Ambient, Per Leg Figure 6. Forward Power Dissipation

500

TJ = 25°C
400
C, CAPACITANCE (pF)

300

200

100

0
1 2 5 10 20 50 70 100
VR, REVERSE VOLTAGE (V)

Figure 7. Typical Capacitance (Per Leg)

R(t), TRANSIENT THERMAL RESISTANCE

10

D = 0.5
1
0.2
0.1
0.05
0.1
0.01
P(pk)
SINGLE PULSE t1
0.01
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 8. Thermal Response Junction-to-Case

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AJ
DATE 05 NOV 2019

SCALE 1:1

STYLE 1: STYLE 2: STYLE 3: STYLE 4:

PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2
3. EMITTER 3. COLLECTOR 3. GATE 3. GATE
4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2

STYLE 5: STYLE 6: STYLE 7: STYLE 8:

PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY
4. DRAIN 4. CATHODE 4. ANODE 4. ANODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12:

PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2
3. EMITTER 3. DRAIN 3. GATE 3. GATE
4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−220 PAGE 1 OF 1

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