[Link].

kr

AON7430
30V N-Channel MOSFET
General Description Features

The AON7430 uses advanced trench technology to

provide excellent RDS(ON) with low gate charge. VDS (V) = 30V
This device is suitable for high side switch in SMPS and ID = 34A (VGS = 10V)
general purpose applications.
RDS(ON) < 12mΩ (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 4.5V)

100% UIS Tested

100% Rg Tested

DFN 3x3 EP D
Top View Bottom
Top View

1 8

2 7

3 6

4 5
G

Pin 1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 34
Current TC=100°C ID 21 A
C
Pulsed Drain Current IDM 80
Continuous Drain TA=25°C 13
A
Current A TA=70°C IDSM 10.2
Avalanche Current C IAR 22 A
Repetitive avalanche energy L=0.1mH C EAR 24 mJ
TC=25°C 23
PD W
Power Dissipation B TC=100°C 9
TA=25°C 3.1
PDSM W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 60 75 °C/W
Maximum Junction-to-Case B Steady-State RθJC 4.5 5.4 °C/W

Rev 3: Feb 2010 [Link] Page 1 of 6

Datasheet pdf - [Link]

[Link]

AON7430

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 1.9 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 80 A
VGS=10V, ID=20A 10 12
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 16 19
VGS=4.5V, ID=20A 13 16 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 45 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 25 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 610 760 910 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 88 125 160 pF
Crss Reverse Transfer Capacitance 40 70 100 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 11 14 17 nC
Qg(4.5V) Total Gate Charge 5 6.6 8 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 1.9 2.4 2.9 nC
Qgd Gate Drain Charge 1.8 3 4.2 nC
tD(on) Turn-On DelayTime 4.4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 9 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 5.6 7 8 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 6.4 8 9.6 nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 3: Feb 2010 [Link] Page 2 of 6

Datasheet pdf - [Link]

[Link]

AON7430

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 30
5V 4.5
10V VDS=5V
25
60 6V 4V
20
ID (A)

ID(A)
40 3.5V 15

10
20 125°C
VGS=3V 5 25°C

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

18 Normalized On-Resistance
1.8

16 VGS=10V
1.6
ID=20A
VGS=4.5V
14
RDS(ON) (mΩ )

1.4
17
12
5
1.2 VGS=4.5V 2
10 ID=20A 10
VGS=10V 1
8

6 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction
18
Gate Voltage
Temperature

35 1.0E+02
ID=20A
1.0E+01
30
40
1.0E+00
25
RDS(ON) (mΩ )

1.0E-01
IS (A)

125°C
20 125°C
1.0E-02
25°C
15 1.0E-03

1.0E-04
10
25°C
1.0E-05
5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10 VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Rev 3: Feb 2010 [Link] Page 3 of 6

Datasheet pdf - [Link]

[Link]

AON7430

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=20A 1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
400

2 Coss
200

Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 160 TJ(Max)=150°C

RDS(ON) 10µs TC=25°C
limited
ID (Amps)

Power (W)

10.0 100µs 120 17

1ms 5
1.0 DC 10ms 80 2
10
0.1 40
TJ(Max)=150°C
TC=25°C
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased 18
Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=5.4°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 3: Feb 2010 [Link] Page 4 of 6

Datasheet pdf - [Link]

[Link]

AON7430

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 30
ID(A), Peak Avalanche Current

25
TA=25°C

Power Dissipation (W)

20
TA=100°C

TA=150°C 15
TA=125°C
10

10 0
1 10 100 1000 0 25 50 75 100 125 150
µs)
Time in avalanche, tA (µ TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

40 10000

35 TA=25°C
30 1000
Current rating ID(A)

17
Power (W)

25

100 5
20
2
15 10
10 10

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=75°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 3: Feb 2010 [Link] Page 5 of 6

Datasheet pdf - [Link]

[Link]

AON7430

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 3: Feb 2010 [Link] Page 6 of 6

Datasheet pdf - [Link]