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The document discusses the deposition methods used in IC fabrication, primarily focusing on physical vapor deposition (PVD) and chemical vapor deposition (CVD). PVD involves sputtering particles from a target using gas ions, while CVD relies on chemical reactions at high temperatures, which can be mitigated by using plasma enhanced chemical vapor deposition (PECVD). CVD generally offers better uniformity in layer thickness compared to PVD.

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41 views1 page

Deposit On

The document discusses the deposition methods used in IC fabrication, primarily focusing on physical vapor deposition (PVD) and chemical vapor deposition (CVD). PVD involves sputtering particles from a target using gas ions, while CVD relies on chemical reactions at high temperatures, which can be mitigated by using plasma enhanced chemical vapor deposition (PECVD). CVD generally offers better uniformity in layer thickness compared to PVD.

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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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DEPOSITON

A multitude of layers of different materials have to be


deposited during the IC fabrication process. The two
most important deposition methods are the physical
vapor deposition (PVD) and the chemical vapor deposition
(CVD). During PVD accelerated gas ions sputter particles
from a sputter target in a low pressure plasma chamber.
The principle of CVD is a chemical reaction of a gas
mixture on the substrate surface at high temperatures.
The need of high temperatures is the most restricting
factor for applying CVD. This problem can be avoided with
plasma enhanced chemical vapor deposition (PECVD),
where the chemical reaction is enhanced with radio
frequencies instead of high temperatures. An important
aspect for this technique is the uniformity of the
deposited material, especially the layer
thickness. CVD has a better uniformity than PVD.

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