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Task 1 Questions

The document describes an assessment task to plot the V-I characteristics of NMOS and PMOS transistors and determine their threshold and pinch-off voltages. It also involves measuring the channel length modulation coefficient and body bias effect of an NMOS transistor.

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Darsh Gupta
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35 views3 pages

Task 1 Questions

The document describes an assessment task to plot the V-I characteristics of NMOS and PMOS transistors and determine their threshold and pinch-off voltages. It also involves measuring the channel length modulation coefficient and body bias effect of an NMOS transistor.

Uploaded by

Darsh Gupta
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Assessment-1

V-I Characteristics of PMOS and NMOS. Measure channel length modulation and
body bias effect.

Task No. 1
i. To Plot the V-I Characteristics (Input and output) of NMOS (L=180nm and W=400nm) and
PMOS (L=180nm and W=600nm) transistors. Determine the region of operation for the
MOSFET. Calculate its threshold voltage and pinch-off voltage.

ii. To find the channel length modulation co-efficient (λ) and observe body bias effect (VBS=0.5 and
VSB=0.5) of N-Channel MOSFET.
Lab Record must contain

• Aim
• Tool requirement
• Schematic diagram (NMOS and PMOS)
• Procedure
• Model graph
• Calculation ( Threshold Voltage, Pinch off voltage,
and CLM parameter)
• Result and Inference
Your notebook must be clearly labelled on the cover with the following information:

Top of Form

Course Name : VLSI System Design Lab

Name :

Register no :

Slot/Batch timing :

Lab faculty Name : Mr. Dayasagar Chowdary

Theory Faculty Name : Dr. Vikas Vijayvargiya

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