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2 SD 1761

This document provides specifications for a 2SD1761 NPN bipolar transistor in a TO-220F package. Key specifications include a low collector saturation voltage of 0.3V typical, excellent current gain characteristics, and a maximum collector power dissipation of 30W at 25°C. The transistor is rated for a collector-base voltage of 80V maximum, collector-emitter voltage of 60V maximum, and emitter-base voltage of 5V maximum. It is commonly used in a complementary pair with a 2SB1187 PNP transistor.

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227 views2 pages

2 SD 1761

This document provides specifications for a 2SD1761 NPN bipolar transistor in a TO-220F package. Key specifications include a low collector saturation voltage of 0.3V typical, excellent current gain characteristics, and a maximum collector power dissipation of 30W at 25°C. The transistor is rated for a collector-base voltage of 80V maximum, collector-emitter voltage of 60V maximum, and emitter-base voltage of 5V maximum. It is commonly used in a complementary pair with a 2SB1187 PNP transistor.

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Copyright
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2SD1761(NPN)

TO-220F Bipolar Transistors


TO-220F

1. BASE

2. COLLECTOR

3. EMITTER
1 2 3

Features
 Low collector saturation voltage:
Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
 Excellent current characteristics of DC current gain.
 Large collector power dissipation: PC=30W(TC=25℃)
 Complementary pair with 2SB1187
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Dimensions in inches and (millimeters)

Symbol Parameter Value Units


VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
pC Collector Power dissipation 2 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=50uA, IE=0 80 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 60 V

Emitter-base breakdown voltage V(BR)EBO IE=50uA,IC=0 5 V

Collector cut-off current ICBO VCB=60V,IE=0 10 uA

Emitter cut-off current IEBO VEB=4V,IC=0 10 uA

DC current gain hFE(1) VCE=5V,IC=0.5A 60 320

Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.2A 1 V

Base-emitter saturation voltage VBE(sat) IC=2A,IB=0.2A 1.5 V

Transition frequency fT VCE=5V,IC=0.5A 8 MHz

Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 90 pF

CLASSIFICATION OF hFE(1)
Rank D E F

Range 60-120 100-200 160-320


2SD1761(NPN)
TO-220F Bipolar Transistors

Typical Characteristics

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