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Silicon PNP Power Transistors

This document provides specifications for the 2SB1187 silicon PNP power transistor. It is in a TO-220Fa package and is intended for low frequency power amplifier applications. It has excellent DC current gain characteristics and a wide safe operating area. Key specifications include a collector-emitter saturation voltage below 1V, DC current gain between 60-320, and transition frequency of 12MHz.

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90 views3 pages

Silicon PNP Power Transistors

This document provides specifications for the 2SB1187 silicon PNP power transistor. It is in a TO-220Fa package and is intended for low frequency power amplifier applications. It has excellent DC current gain characteristics and a wide safe operating area. Key specifications include a collector-emitter saturation voltage below 1V, DC current gain between 60-320, and transition frequency of 12MHz.

Uploaded by

klaus allows
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

JMnic Product Specification

Silicon PNP Power Transistors 2SB1187

DESCRIPTION ・
・With TO-220Fa package
・Low saturation voltage
・Complement to type 2SD1761
・Excellent DC current gain characteristics
・Wide safe operating area

APPLICATIONS
・For low frequency power
amplifier applications

PINNING

PIN DESCRIPTION

1 Emitter

2 Collector

3 Base

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -80 V

VCEO Collector-emitter voltage Open base -60 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current (DC) -3 A

ICM Collector current-Peak -6 A

TC=25℃ 30
PC Collector power dissipation W
Ta=25℃ 2

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon PNP Power Transistors 2SB1187

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA , IB=0 -60 V

V(BR)CBO Collector-base breakdown voltage IC=-50μA , IE=0 -80 V

V(BR)EBO Emitter-base breakdown voltage IE=-50μA , IC=0 -5 V

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V

VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V

ICBO Collector cut-off current VCB=-60V ;IE=0 -10 μA

IEBO Emitter cut-off current VEB=-4V; IC=0 -10 μA

hFE DC current gain IC=-0.5A ; VCE=-5V 60 320

fT Transition frequency IC=-0.5A ; VCE=-5V 12 MHz

Cob Output capacitance IE=0 ; VCB=-10V ,f=1MHz 100 pF

2
JMnic Product Specification

Silicon Power Transistors 2SB1187

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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