Topic 1

OVERVIEW OF POWER
ELECTRONIC DEVICES
DET40073- Power Electronics

June 2021
 Function Of Power Electronics
• Power electronics deals with conversion and control of large
amounts of electrical power.
• The power semiconductor devices are used as on/off switches in
power control circuit.
• The word power means high amplitudes of current and voltage.

Figure 1 : Basic diagram Conversion Inverter

Switch-Mode Power Supply
The electronic power supply integrated with the switching regulator
for converting the electrical power efficiently from one form to
another form with desired characteristics is called as Switch-mode
power supply.
It is used to obtain regulated DC output voltage from unregulated
AC or DC input voltage.

Figure 2 : Basic Block diagram of an SMPS

The Block Diagram of SMPS
The basic building blocks of an SMPS are shown in Figure 3:

Figure 3 : Block diagram of an SMPS

Concept Of Ac To Dc Converter in SMPS
• Input Rectifier Stage
• if the SMPS has an AC input, then the first stage is to convert the input to DC.

• Inverter Stage
• The inverter stage converts DC, whether directly from the input or from the rectifier stage
described above, to AC by running it through a power oscillator.

• Output Transformer
• If the output is required to be isolated from the input, as is usually the case in mains
power supplies, the inverted AC is used to drive the primary winding of a high-frequency
transformer and this converts the voltage up or down to the required output level on its
secondary winding.
• Output Rectifier And Filter
• If a DC output is required, the AC output from the transformer is rectified.

• Chopper Controller
• Feedback circuit monitors the output voltage and compares it with a reference voltage.
Power Electronics In HVDC
High Voltage Direct Current Transmission | HVDC Transmission
■ The massive transmission of electricity in the form of DC over
long distances by means of submarine cables or overhead
transmission line is the high voltage direct current transmission.
This type of transmission is preferred over HVAC transmission for
very long distance when considering the cost, losses and many
other factors. The names Electrical superhighway or Power
superhighway are often used for HVDC.
Figure 4 : HVDC Substation Layout
HVDC Transmission System
■ AC power is generated in the generating station. This should first be
converted into DC. The conversion is done with the help of rectifier.
The DC power will flow through the overhead lines. At the user end,
this DC has to be converted into AC. For that purpose, an inverter is
placed at the receiving end.
■ Thus, there will be a rectifier terminal in one end of HVDC substation
and an inverter terminal in the other end. The power of the sending
end and user end will be always equal (Input Power = Output Power)
Silicon Controlled Rectifiers (SCR)
• Silicon Controlled Rectifier (SCR) is a four layer PNPN silicon-
switching device.
• The SCR has three terminals the anode (A), cathode (K) and gate
(G). There are correspondingly three junctions J1, J2 and J3
respectively.
• The symbol and structure of SCR are shown below:
• SCR is a unidirectional device conducting only from anode to cathode
(forward bias).
• It blocks the current flow from anode to cathode until it is triggered in
to conduction by the application of suitable gate signal between gate
and cathode.
• SCR is so called because Silicon is used for its construction and its
operation as a Rectifier can be controlled.
• Once the SCR start conducting, it behaves like a conducting diode
and there is no control over the device although the gate voltage
has stopped.
Turn-on characteristics of SCR
Two condition must be met to turn-on an SCR :
1. Anode voltage should be positive with respect to the
cathode.
2. Gate voltage should be positive with respect to the
cathode.
Turn-off characteristics of SCR
The gate has no control over the SCR once it goes into conduction.
Turn-off must be achieved in the anode-to-cathode circuit such as :
1. Reversing anode-to-cathode terminal
2. Forcing current in the anode circuit in the reverse direction.
3. Decrease forward current (IF) lower than holding current (IH)
(Gate-controlled effect)
• Forward bias with no gate current – no current flow means will act as
open circuit.

• Forward bias with gate current – conduct and act as closed circuit.

• Reversed bias – there is no current flow and act as

open circuit.

• VBO – Forward Breakover Voltage is the value forward biased voltage that
turns SCR from blocking state to conduction state without positive voltage
at gate.

• VBR – Reversed Breakover Voltage is the maximum value of reverse biased

voltage to be in blocking state. If the reverse voltage is exceeds VBR, the
SCR is damaged.
• Latching current, IL – the minimum forward current that flows
through the SCR to keep it in forward conduction mode (i.e ON
state) at the time of triggering. If forward current is less than
latching current, SCR does not turn-on.

• Holding current, IH – the minimum forward current that flows

through the SCR to keep it in forward conduction mode. When
forward current reduces below holding current, SCR turn-off.
I-V characteristics of SCR

Figure above is V-I characteristic of SCR where the forward current, IF is plotted with
respect forward voltage, VF.
‘VBO’ = forward breakover voltage
‘VBR’ = reverse breakover voltage.
Gate-controlled effect for Forward Breakover Voltage
(VBO)

If gate current (IG) is supplied sufficiently, the forward breakover voltage

(VBRF) will start early. Means, the higher rate of gate current (IG), the
lower VBRF needed for SCR to conduct.
For example in figure above, VBRF0 is at the instance of IG0 = 0. If the
IG0 is increased to IG1, VBRF1 will happen earlier than VBRF0. The rate
of VBRF can be lowered by increasing IG. If it is adjusted to a value that is
higher enough, SCR will act as a diode.
• When supply voltage < forward breakover voltage (VBO), SCR is
in ‘OFF’ condition.

• If supply voltage ≥ VBO , SCR is in ‘ON’ condition.

• When SCR is in ‘ON’ condition, the rate of current flow should not
lower than the rate of holding current of the SCR.
Concept and Principle of SCR as a switch

• SCR firing circuit uses scr as a switch to

control a lamp and also be used control
circuit for a motor, heater or some other
such DC load
Regenerative Action using two-transistor model

• Transistor Q1 is PNP, whereas Q2 is NPN. The base of Q1 is connected to

collector of Q2. Similarly base of Q2 is connected to collector of Q2.
• These transistor is in common base configuration.
• If anode (Q1 emitter terminal) is supplied with positive voltage more
than cathode (Q2 emitter terminal), the Q1 & Q2 transistors will not
operate because not in conducting condition.

• When a pulse is connected to gate (Q2 base terminal), then Q2 will

operate. This is because Q2 is NPN-type transistor where positive
voltage at base terminal is needed for Q2 turn into forward bias.

• When Q2 is operated, the collector current of Q2, ICQ2 start to flow.

As there is direct relation between collector Q2 and base Q1, so ICQ2
= IBQ1. With the existence of IBQ1, it will causing Q1 to operate.
• As Q1 is operating, it will produce collector current, ICQ1. By direct
relation between collector Q1 and base Q2, it will causing, ICQ1 =
IBQ2.
• With the existence of IBQ2, it will cause Q2 always in operating
condition. This is called regenerative action where current will flowing
continuously from anode to cathode although positive voltage at the
gate is disconnected.
Gate-Turn-Off (GTO)

Structure diagram
• A gate-turn-off (GTO) is a member of the thyristor family. It has
three terminals : anode (A), cathode (C) and gate (G).
• The basic structure of a GTO is similar to a thyristor (a four-layer
pnpn SCR).
• A GTO is turned on by forward biasing the gate- cathode junction
and turned off by reverse biasing the same junction (contrary to
SCR).
• Observe that there is double arrow on the gate. This indicates that
bidirectional current flows through the gate. The rest of the symbol
is similar to SCR.
Basic operation of GTO

• In terms of operation, GTO has same function as SCR. But in

terms of method to turn-on and turn-off GTO, it is easier than SCR
as long as certain pulse is supplied between the gate and the
cathode.

• GTO-SCR do not need external circuit for turn-off. Hence turn-off

of GTO can be achived by negative current from gate.
Turn-on characteristic of GTO
• The GTO can be turned on by the application of the gate signal,
and can also be turned-off by a gate signal of negative polarity.
Thus gate has full control over the operation of GTO.
• Turn on is accomplished by a "positive current" pulse between
the gate and cathode terminals. As the gate-cathode behaves
like PN junction, there will be some relatively small voltage
between the terminals.
On-state condition of GTO
• The turn on phenomenon in GTO is however, not as reliable as
an SCR and small positive gate current must be maintained
even after turn on to improve reliability.
• The on-state voltage drop for the GTO is about 2V to 3V which is
high as compared to the conventional thyristor (1 to 1.5V).
• The switching speeds are in the range of the few microsec to 30 m
sec, means that a short duration gate pulse is enough to drive
them in the on-state.
Turn-off characteristic of GTO
• Turn off is accomplished by a "negative voltage" pulse between the
gate and cathode terminals.
• Some of the forward current (about one- third to one-fifth) is "stolen"
and used to induce a cathode-gate voltage which in turn induces the
forward current to fall and the GTO will switch off (transitioning to the
'blocking' state.)
I-V characteristic of GTO

• In this figure observe that the V-I characteristics of GTO in forward

direction are similar to that of SCR. However, they have relatively
larger holding current and gate trigger current
• But in reverse direction GTO has virtually no blocking capability.
Observe that GTO starts conducting in reverse direction after very
small reverse (20 to 30V) voltage. This is because of the anode short
structure.
Concept and Principle of GTO as a switch

• The basic operation of GTO is the

same as that of the conventional
SCR.
Merit of GTO
i. Gate has full control over the operation of GTO.
ii. Low on-state loss.
iii. High ratio of peak surge current to average current.
iv. High on-state gain.
Limitations of GTO

i. GTO’s require large negative gate currents for turn-off. Hence

they are suitable for low power applications.
ii. Very small reverse voltage blocking capability.
iii. Switching frequencies are very small.
TRIAC (Bidirectional Triode Thyristor)

Structure diagram
• Triac is also called bi-directional device. It conducts in both the
direction.
• It contains 3 terminals : Main Terminal 1 (MT1), Main Terminal 2
(MT2) and Gate (G).
• The control terminal, gate is near to terminal MT1. This device is
turned-on by
+ve gate current that the gate signal
being applied between the gate and MT1 terminals.
Turn-on characteristic of TRIAC
• This device is turned-on by +ve gate current that the gate signal
being applied between the gate and MT1 terminals.

• Gate has no control over the conduction once triac is turned on.

Turn-off characteristic of TRIAC

• Triac turns-off when voltage is reversed.

I-V characteristic of TRIAC
I-V characteristic of TRIAC

• The supply voltage at which the Triac is turned ON depends upon

the gate current.
• The Triac operates in quadrant 1, where the terminal MT2 is positive
with respect to terminal MT1. Now the Triac is positively biased.
• The Triac operates in quadrant 3 where the terminals MT2 is
negative with respect to terminal MT1. Now the Triac is negatively
biased.
• The static switching characteristic in quadrant 1 is identical to that
of the SCR and the characteristic in quadrant 3 is symmetrical to
that in quadrant 1. Thus the Triac is effectively equivalent to an
inverse-parallel arrangement of two SCRs.
• Other characteristic that same as SCR curve is that the higher rate
of gate current (IG), the lower VBRF needed for Triac to conduct.
Equivalent Circuit Using SCR
Concept and Principle of TRIAC as a switch

• Simple triac switching circuit is require

an additional positive or negative
gate supply to trigger the triac into
conduction.

DC triggered triac power

switching circuit
 • But can also trigger the triac using
the actual AC supply voltage itself
as the gate triggering voltage

Simple static AC power

switch circuit
 • Triac switching circuit uses phase
control to vary the amount of voltage
of AC motor.

Basic phase triggering circuit

Merits of TRIAC

i. Triacs is a bidirectional device, i.e. it conducts in both

directions.
ii. Triacs turns-off when voltage is reversed.
iii. Single gate controls conduction is both directions.
iv. Triacs with high voltage and current ratings are available.
Demerits of TRIAC

i. Triacs are latching devices like SCR. Hence, they are not suitable
for DC power applications.
ii. Gate has no control over the conduction once triac is turned on.
iii. Triacs have very small switching frequencies.
IGBT(Insulated Gate Bipolar Transistor)
• The Insulated Gate Bipolar Transistor (IGBT) is the latest device in
power electronics.

• This device combines the advantages of MOSFET and

BJT.
i. Like MOSFET, it is not having the secondary breakdown
problem. It is having high input impedance.
ii. Like BJT, it is having the low-on state power loss.
Symbol Of IGBT

• IGBT has three terminals : Gate (G), collector (C) and emitter (E).
• Sometime the collector is also called drain and emitter is also
called source.
Structure of IGBT

• The IGBT structure is very close to the n-channel MOSFET. The

major difference between the structure of the n-channel IGBT and
MOSFET is that a highly doped P+ type substrate is provided with
IGBT.
• From the basic structure, n+ P body region, n- forms the power
MOSFET.
• The n- drift region forms the drain.
• The next part will constitute the three layers p+ n- p, that forms a
bipolar junction transistor between the drain and source terminals p
n- p+ regions will behave as collector, base and emitter (E) of pnp
transistor respectively.
I-V characteristic of IGBT
• The figure shows the V-I characteristics of n- channel IGBT.
• Sometime the collector is also called drain and emitter is also
called source.
• The characteristics are plotted for drain (collector) current iD with
respect to drain source (collector emitter) voltage VDS.
• The characteristics are plotted for different values of gate to
source (VGS) voltages.
• When the gate to source voltage is greater than the threshold
voltage VGS(th), then IGBT turns-on.
• The IGBT is off when VGS is less than vGS(th).
• The figure shows the ‘on’ and ‘off’ regions of IGBT.
• The BVDSS is the breakdown drain to source voltage when gate is
open circuited.
• IGBT have turn-on and turn-off times of order of 1µsec and
are available in large ratings as large as 1700V and 1200A.
Voltage ratings up to 2.3 kV are projected.
• The switching frequency of IGBT is in the range of 50kHz.
• It can be used for the speed control of AC and DC motor drives.
Concept and Principle of IGBT as a switch
Merits of IGBT
i. Voltage controlled device. Hence drive circuit is very
simple.
ii. On-state losses are reduced.
iii. Switching frequencies are higher than thyristor.
iv. No commutation circuits are required.
v. Gate have full control over the operation of IGBT.
vi. IGBTs have approximately flat temperature coefficient.

Demerits of IGBT
i. IGBTs have static charge problems.
ii. IGBTs are costlier than BJTs and MOSFETs.