REALISTIC. ~ Service!\/anual! HTX-100 10 METER SSB/CW TRANSCEIVER Catalog Number : 19-1101 TABLE OF CONTENTS Aignment Procedure... ‘Alignment Points Locatons .. PCB (Top and Bottom) Views. Wiring Diagrams... Electrical Pars List .. Exploded View . Mechanical Pans List Transistor Votage Chan. Ie Votage Chart... Semiconductor Leas Identification. Ie Internat Diagram ‘Schematic Diagram. pases aes Ee 6 RRealiatic and Radio Shack are registered Cademarks of Tandy Corporation.SPECIFICATIONS GENERAL 1 2 10. oe Frequency Range Microphone |. Speaker . Antenna Connector Jacks & Connectors Controls Display/Indicators LCD LED Size Weight Accessories Power Source MEASUREMENT CONDITIONS 1 2 3. Power Source ‘Antenna impedance Test Temperature ‘SSB Modulation Frequency, Two Tone: Mean Signal input Level Reference Audio Output Power Audio Frequency SSB cw ‘Audio Output Load 28.0000 ~ 29.6999 MHz 2 600 Q, Dynamic Type : 8O,5W : M Type: MIC (8 PIN), DC Power (3 PIN), EXT SP (3.5¢), CW Key IN (3.59), Phone (3.54) 2 Mode selector (SSB/CW), ON/OFF Volume, Squelch, RF Gain, Power Hi/LOW Switch, RIT, NB ON/OFF Switch, Frequency Dial, Frequency/Memory UP/DOWN SW, Store Key, 500 k Key, MEMO key, Step Key, F. LOCK ‘Switch, TX/X Switch Frequency Indicator, Memory Channel Indicator, Mode In- dicator (CW/SSB) MEMO, TX Indicator RF/S Meter 2 BTaQ(H) X Tag"(W) X 77/50) 62 mm(H) x 185 mm(W) x 200 mm(D) (Unit) 1 Ibs 3 02 (1.9 kgs) (Unit) DC Power Cable with Fuse Microphone with UP/DOWN SW Mic Hanger 2 13.8 VDC + 15/-20 %, Negative Ground 13.8 V(DC) : $02 2 77 (25°C) 500 Hz & 2400 Hz 1000 Vv osw 1 kHz 800 Hz 8 ResistiveTRANSMITTER SECTION ITEMS 10, "1 12. 13, UNIT NOMINAL, 1. Frequency Tolerance at 25°C (5 minutes after Switch on) (ssB cw) Hz +300 Carrier Power cw HI w 25.0 Low w 5.0 PEP Power (18 Wpep + 10 dB up Two Tone) ssB HI Wpep 25.0 Low Wpep 5.0 Spurious Harmonic Emission (SSB CW) 3B —50 Carrier Suppression ssB 3B —55 Unwanted Sideband Suppression (at 2500 Hz 4 Wpep 16 dB up Single tone) SSB 3B —50 Battery Drain ‘SSB: at No Modulation mA 800 CW: NOT KEY Down mA 800 Battery Drain SSB: MAX Wpep, Two Tone HI mA 3200 Low mA 1600 CW: MAX Carrier HI mA 5000 Low mA 2400 Modulation Frequency Response (1 kHz, 0 dB Reference) Lower at 450 Hz ssB a8 -4 Upper at 2.0 kHz ssB aB 6 Microphone Sensitivity mv 1.0 ALC Range ‘SSB: 18 — 28 Wpep 3B 50 CW Monitor Output mw 5 ‘CW Monitor Frequency Hz 1000 CW Monitor Distortion % 25 14. UuMIT +1500 22.5 ~ 29.0 3.0 ~ 7.0 22.5 ~ 28.0 3.07.0 1500 1500 4500 2500 6000 3200 =10 -10 20 40 2510 850 1150 6RECEIVER SECTION (NB Switch OFF) ITEMS UNIT NOMINAL umrr 1. Max. Sensitivity cw/SsB Ww 0.25 1.0 2. Sensitivity for 10. 48 S/N cw/ssB Ww 0.25 1.0 3. AGC Figure of Merit, 50 mV for 10 dB Change in Audio Output cwssB 3B 80 70 4, Overall Audio Fidelity at 6 dB down Upper Frequency ssB Hz 3200 2500 ~ 3900 Lower Frequency ssB Hz 400-200 ~ 500 5. Adjacent Channel Selectivity (10 kHz, 1 GEN) cw/SsB dB 70 60 6. Maximum Audio Output Power CW/SSB w 3.0 20 7. Audio Output Power at 10% THD cwssB w 20 18 8. RF Gain Control Range cw/SsB 3B 55 30.70 9. Squelch Sensitivity at Threshold cw/ssB Ww 05 20 10. Squelch Sensitivity at Tight cw/SsB Ww 1000 250 4000 11, S Meter Sensitivity at “S-9” (No Modulation) cwrssB wv 100 © 25 ~ 400 12, Image Rejection Ratio cwrssB 3B 65 55 13, IF Rejection Ratio cwrssB 3B 65 55 14, Oscillator Dropout Voltage cwrsse v 9 WW 15. Battery Drain at No Signal cwrssB mA 500 800 16. Battery Drain at Max. Audio Output CW/SSB mA 1000 1500 17. RIT Range cwssB kHz £15410 420 18. S/N Ratio at input mV ssB eB 45 30 19. THD at 500 mW 1 kHz ssB % 25 6 cw % 25 6 20. Output Deference ImV SSB 0dB Ref. CW Counterclockwise VR it : Counterclockwise VR 12 + Clockwise TYRX SW: AX FREQUENCY —: 29.000 MHz 3. Alignment Procedure Step] Presetto__| Adjustment | Remarks Remove the B001 (PB-100) from Main PCB. VR 12 |Connect a OC Ampere meter (+) to TP 6, (=) to TP 5. |Adjust VR 11 for 50 mA reading on the DC Ampere meter. Connect the DC Ampere meter (+) to TP 6, (—) to TP 4. |, [Mode: ss8 | No modulation Pilea VA11 lagjust VR 12 for 50 mA reading on the DC Ampere Meter. | Disconnect the DC Ampere meter. Reinstall the 8001 to the | |Main PCB. | }OSC 1:500Hz | | Connect a RF Power meter to the Antenna jack and then, con- 3 [OSC.2: 2400 Ha Lag nest a AF SSVM, an osciloscope across a RF dummy load to $1, S2: ON the RF power meter. Mode:SSB Adjust L 26 for maximum reading on the RF SSVM. During this step, set the AF S.G. so that the output is less than| 20 Vp-p. Repeat this step two times. [Adjust level of OSC 1 and OSC 2 for 30 mV reading on the AF 4 |Same VRS |SSVM, then adjust VR 5 for 36 Vp-p reading on the oscillo- { scope. Pull RF Gain [Adjust level of OSC 1 and OSC 2 for 30 mV reading on the AF 5. |Control VR6 —|SSVM, then adjust VR 6 for 16 Vp-p reading on the oscillo- (Low Power) scope. [OSC 1, 0SC2 | yp [Adjust VR 4 so thatthe carrier leakage at SSB and CW be- OFF come minimum and almost equal. 7 [sameasstepa. | vag _ [Abjustlevel of OSC 1 and OSC 2 or 30 mV reading on the AF SSVM, then adjust VA 9 so that “9” LED just lights on. ieceiew. {Connect an AF SSVM across a dummy load (8 ohm) to EXT Ne niedoleer VR 13 jack. Connect a key switch to the Key jack. With Key switch ‘ON, adjust VR 13 for 0.2 V reading on the AF SSVM. -2~Step] __Presetto —_| Adjustment Remarks 9 (Mode: CW | No |Check if the RF power level is 23 ~ 29 W reading on the RF [KEY SW: ON |_aligament_|power meter. | Mode: CW jo (LowPowe | __No__|Gheck i the RF power levelis 3 ~ 7 W reading on the AF Pull RF Gain Con- | alignment |power meter. trol 4, TEST EQUIPMENT CONNECTION Connection for Transmitter Alignment Mic PLUG ©oe @ @® @ @ © @ 1K sw 20-16, 70—_________| —13- AFOSC (+) AFOSC(-)ALIGNMENT OF RECEIVER PORTION 1. Test Equipment Required AF SSVM DC Power Supply (13.8 V) Oscilloscope Dummy Load (8 chm) Standard Signal Generator (29.000 MHz, _Noise Generator and 50 ohm Impedance) 2. Preparation for Alignment NB SW : OFF MODE SW : SSB ‘Squelch Min, RF Gain MAX VOLUME, MAX TURK SW: RX RIT : Middle position 3. Alignment Procedure Step, Preset to Adjustment Remarks [Alignment for sensitivity L2~LS5 |Adjust coils for maximum reading on the AF SSVM L7 and L 8 |(During this step, set the Standard Signal Generator attenuator [So that the standard output is less than 0.5 W (2 V/8 ohm).) [Alignment for Squetch ‘Squelch: Fully vr2__ [Set the output of Standard Signal Generator to 1 mV and clockwise squelch to maximum. Adjust VR 2 so that the squelch just breaks. | i Alignment for S-Meter | | | Set the output of Standard Signal Generator to 100 nV, no. 3 VR1 modulation, ‘Adjust VR 1 so that “9” LED just lights on Set the level of S.S.G. to approx. 2uV, then adjust L1 for maxi- 4 |NB:ON L1 [mum reading on the oscilloscope. [Connect the oscilloscope to TP 1. TEST EQUIPMENT CONNECTION r= ~MeALIGNMENT POINT LOCATIONS Main PCB PBIZOAA Pee vate VRS VRS VRS tre 5 16 vem) (1 ( pred 00 Dl HI POWER: ie val ‘ ep 3a SMETER u us ys ] wf CJ Sain ps ag = L Liz U3 F ves cater BALANCE POIS3AA bats (Fs0} Toeso3 O t VR303, (Eales oe | (308) 1303 i res0y vR302 si Oo] t VR304 132i iwz ] L304 om Coutma (vm BALANCE I vaSOT BLANGE 2 =18-TROUBLESHOOTING HINTS Note: Refer to the transistor voltage chart and the IC voltage chart for the IC and transistor terminal vol- tages. TRANSMITTER SECTION NG Replace defective Check PTT switch. Prraien TOK 7 NG_ [Replace detective ‘Cheek microphone, aaa OK Check microphone |_NG |” Replace detective jack. parts, Check microprocessor circuit. | + See microprocessor section. eis naaes ie: Check pins 7 and 8 of [C3}——--} Replace defective parts. YOK Gheck vonage of O31, |_NS_[ fostace defective part 29 and 027. Reslace defective parts. OK Cheek voltage and frequency at TP2. YOK [ecient ne jace antenna an Check antenna. [NS | Replace af a antenna jack, | % See PLL section OK Check antenna wire. [SS of Resolder W511. OK Check voltage of 0502, |_NG JT GS01, G33 and 034, Reclace defective parts TOK ‘Cheek voltage of 1C6, 162. 3. ‘Check voltage and NG [Check voltage of NG] Replace dete frequency at TPS 23. parts | ‘OK = |S | Replace defective parts. Tx section is not defective. 16RECEIVER SECTION No receation. OK —___!_ the wire connection. Check the speaker and NG Replace defective parts and/or poor soldering, OK Check voltege at pin? of ICB. Check voltage at NG base of 039, | OK Check voltage at pint of C5. ok Check voltage of 027. 31, ok — = | Tex See microprocessor section. Replace defective parts. Replace defective carts. ‘Check if the SQ control operates normally. oK ‘Check if the voltage level is 1Vo-p and frequency is 10.695MH2 (CW) and 10.6965MHz (SSB) at TPS. Replace defective parts and/or readjust SQ control ‘Check voltage at pin of ICt. Replace defective crystal (X1), NG [Check voltege of | |.NG, 923. Rx section is not defective -v-PLL SECTION No good. Check if the LCD displays |_NG normally. plays | Tbe % See microprocessor section check, OK Check i the frequency is 1024MHz at emitter of 9305, defective O305 and/or X301. 10K Check if the voltage is .8Vep and frequency is 10.4985Mnz (SSB) and 10.495MHz (CW) at ‘TP302. ‘Check if the voltage is 6V at TP301. oK 6 ox i | oK oS Check voltage of 10305, [SS o} Replace defective parts Tox Check if the voltase |NG[ Check if the voltaze |NG NG] Replace 3h data se SEV et pyizomver ang Check voltage defective 0309 x iz and frequency is 22MHz es . ; at 28.000MHz, at TP307. faut and/or X302. Check if the voltage is Check voltage 120mVp-p and frequency is of IC308 and 17.6985MHz at TP305. 0306, a307, Roplaco defective parts, oK 1k NG. Check voltage of 0307, |=} Replace defective parts. NG ee es Check voltage of 0308. Replace defective arts. 28,000MH2~29,6993MH2, 1% Check if connection of J301 is OK. || Replace cefective L318 and/or L319, T yox PLL section is not defective. 1MICROPROCESSOR SECTION oK Check waveform at pins 1 and 52 of IC401. oK Check waveform of pins 6~13 of IC401. Check if the waveform is as following figure i SS aniac at sind of Check if the Cheah if the Glock]NG| faba wnen [NS Replace UCD displays BAM to owe anhel voltage detective normally icaor. is on. oro parts. | [ie Lee Reslace defactive R404. Reolace defective 16402. Replace defective LCD. Reolace defective parts. Replace defective Y401. ING ‘Check if S613 operates normally, Check voltage of 10403. NG Replat defective 1C403, oK Check if S605~S612 ‘operate normally, Check the output of Mute and the output of BEEP, Replace defective Ieao2. OK t Microprocessor section is not detective. Tox Replace defective $613. Replace defective Switch (@).. Chack voltage at pinét of 1c402, Check voltage of Q401. Replace defective S603 and/or Mic. Jack. Replace defective 1C402. -19-PCB (Top and Bottom) VIEWS Main PCB (Top View) 3P13 + zz P. == 'oee 3 22 GL Reo 6 SPA3 TE — teat <> 659 lear tty e9df P58 RITS te DBD PVIVIXFIDIIDAD YD »y) YF YY VD) ) yyy PLL PCB (Top View) ee 3 5 = . 2 3 2PLL PCB (Bottom View) cate as S Fe = Ld a —24— ————- -, YYIIIIIIIIIIIIIIID DD DSODID II II II VIO yy) ) YR VV) Y VV YIM) WIRINC Fis01.s07 c¥YI72 WASOG —W-071389 W506 BUL_ 3-70 FCSO! _—FA-064 WASC3 —_—W-O71448A PB-133 (TOP: W5i! GRY 3-30-10. 4503 dK052 BLK wses ORG 5-50- waSo1 ¥2-229 Fcso2 WF-059 3- WASG2 W-071427 WASOS W-O71461 W512 BLK 3-160-3 1csot SP501 SP1B11 DIAGRAM WRSOt RVES3 VRSOS KB RY68E RF GAIN SOK A VOL TINCOATED WIRE WASOT W-071659 FRONT PCB MICOM PCB WASOL W-071L69 SOLDERING SOLDERING TINCOATED WIRE TRRAX TUBE (¢ PB-1301TOP) PB-132( TOP) GELLELIRAAELAEERARRARAS.ELECTRICAL PARTS LIST MAIN PCB ASS'Y B001 | PC BOARD MAIN PB-130AA No. oe PART NO. | PART NO. ASSEMBLY, PCB, MAIN ATSS3ZTBEA Consists of the following PC BOARD BPBYO130AAZ| CAPACITORS The following codes indicate variations of capacitors against temperatures; YA = +5%, YB = +10%, YD = ISL = +350ppm/°C ~ —1000ppm/°C, UJ = —750ppm/"C + 120ppm/*C 20 —30%, YE = +20 —50% (—25 ~ +85°C), ZF = +30 ~80% (—10 ~ +70°C), CH = 0+ 60ppm/"C, RH = 220ppm/*C + 60ppm/"C, TH = ~470ppm/°C + 6Oppm/*C, IC001 | Ceramic 4pF50V +0.25% SL |BCCG814091Z| }C002 | Ceramic 0.0047 uF 50 V +80/—20% YF(F) IBCKG814720Z, 1C003 |Semi-conductor (SR) 0.047 uF 25V + 10% 'BCGC514735Z| C004 | Ceramic 22 pF 50 V +10% SL 8CCG8122052| ICOO5 |Semi-conductor (SR) 0.022 uF 25V + 10% BCGC5122352| COO |Semi-conductor (SR) 0.047 uF 25V +10% |BCGC5147352Z| C007 |Ceramic 0.0047 uF 50 V +80/—20% YF(F) |BCKG8147202| C008 | Ceramic 0.001 uF 50 V +20% YD(D) BCKD8 110262 IC009 | Ceramic 82 pF 50 V +10% SL ) 'BCCG818205Z, }C010 |Ceramic 0.01 uF 50 V +80/—20% YF(F) | BCKG811030Z }CO11 Electrolytic 0.47 uF 50 V +80/~20% | BCEL814780Z |CO12 |Ceramic 330 pF 50 V +10% SL | BCCG8133152| C013 | Ceramic 0.001 uF 50 V +20% YD(D) | |BCKD811026Z C014 | Ceramic 0.001 uF 50 V +20% YD(D) 1 BCKD811026Z C015 | Electrolytic 100 uF 10 V +80/-20% BCEL111010Z |CO16 | — Not Used — 1CO17 |Semi-conductor (SR) 0.01 uF 25V 10% /BCGC511035Z ICo18 |Ceramic 0.001 uF 50 V +20% YO(D) | BCKO811026Z |C019 | Ceramic 39 pF 50 V +10% SL 1 /BCCG8139052Z} }CO20 |— Not Used — 021 | Ceramic 39 pF 50V +10% SL BCCGB13905Z| C022 | Ceramic 10 pF 50 V =0.5% SL BCCGs110022| |CO23 | Electrolytic 47 uF 10 V +80/—20% BCEL114700Z C024 |Semi-conductor (SR) 0.001 uF 25 V +10% BCGC5110252| |CO25 | Electrolytic 22 uF 10 V +80/—20% BCEL1122002 |CO26 | Semi-conductor (SR) 0.012 uF 25V +10% BCGC5112352| |C027 | Semi-conductor (SR) 0.0033 uF 25 V = 10% ' BCGC513325Z [coze | Electrolytic 22 uF 10 V +80/—20% | |BCEL1 122002 eramic 0.0047 uF 50 V +80/—20% [coa0 pany bsyeeeengze af 20% YF(F) |BCKG8147202, 031 |Ceramic 2% Sime iE EVIEES., scoonac (C033 |Ceramic 0.001 uF 50. V + 20% YD(D) BCKDB110262 ~27-7 REF. : RS MFR'S No. | eee | PART NO.| PART NO. C034 [Electrolytic 47 uF 10 V +80/-20% BCEL1147002 C035 | Ceramic 0.0% uF 50 V +80/—20% YF(F) BCKGB110302 (6036 | Geramic 0.01 uF §0 V +80/~20% YF(F) BCKGB? 10302 C037 |Ceramic 0.01 uF 50V + 20% YD(O) &CKDB11036Z. cose |Ceramic 0.0047 uF 50 V +80/—20% YF(F) BCKGE14720Z [cog9 |Electrolytc 100 uF 10 V +80/~20% BCEL1110102 [C040 |— Not Used — | Coat | Ceramic 3pF50V 0.25% SL acocs1s091Z C042 [Ceramic 3 pF 50V +0.25% SL jpcccarao91z C043 | Ceramic 0.0047 wF 50V +80/—20% YF(F) |BCKG8147202! Coda |— Not Used — | C045 | Semi-conductor (SA) 0.047 wF 25V + 10% 'acecs147352! C046 |— Not Used — 6047 |Semi-conductor (SR) 0.01 uF 25V + 10% BCGCS11035Z C048 |Semi-conductor (SR) 0.047 uF 25V +10% BCGC514735Z C049 [Electrolytic 10 uF 16 V +80/-20% |BCELS1 1000Z C050 |— Not Used — { i (Cosi |Semi-conductor (SR) 0.047 uF 25 V + 10% jsccosta7352| [cose |— Not Used — Coss |Ceramic 100 pF SOV + 10% SL | BCCGB110152 IC0S4 |Semi-conductor (SR) 0.047 uF 25 £10% 8CGC5147352 Coss |Ceramic 0.087 uF 25 V +80/—20% ZF BCKC5147302, [C056 |Semi-conductor (SR) 0.047 uF 25V +10% BCGC514735Z Icos7 |Geramic 0.01 iF 50 V +80/—20% YF(F) BCKGB11030Z Coss | Ceramic 12 pF 50V +5% RH | BCCRB112042 C059 ‘Ceramic 23 pF 50 V 5% RH | |BCCRs12304z }C060 |Semi-conductor (SR) 0.047 uF 25V + 10% | BCGC5147362 Jco61 | Ceramic 270 pF SOV = 10% SL accge127152 Icos2 Ceramic 0.01 wf 50V +80/—20% YFIF) jBCKG81 10302 [C083 |Geramic 180 pF SOV +5% CH |scccs118142 Cosa |Etectrolytic 220 uF 10 V +80/~20% BCEL112210Z [Coss |Semi-conductor(SR) 0.01 uF 25V +10% BCGCS1 10352 ICo6s ! Electrolytic 47 uf 10 V +80/-20% BCEL114700Z [C087 |Semi-conductor (SR) 0.0 uF 25V + 10% BCGCS1 10352 (cos | Ceramic 39 pF 50 V =10% SL BCCG813905Z JCo6s | Geramic 150 pF 50 V £ 10% SL acca 15152 }C070 |— Not Used — [C071 |Semi-conductor (SR) 0.056 uF 25 V +10% BcGcs156352| 1C072 | Ceramic 0.001 uF 50V 20% YD(D) BCKD8110262 [C073 | Semi-conductor (SR) 0.0047 uF 25 V + 10% BGc5147252| C074 |Ceramic 560 pF 50 V 10% SL |accgs1s6152| C075 | Geramic 560 pF 50V = 10% SL BCCGE15615Z C076 jElectrolytic 4.7 uF 50 V +80/—20% BCELB14790Z 16077 [Electrolytic 220 uF 10 V +80/—20% BCEL122102 1078 | Ceramic 0.001 uF 50V +20% YD(O) BCKO8110262 [C079 |— Not Used — C080 jElectrolytic 0.22 uF 50 V +80/-20% BCEL812280Z C081 | Electrolytic 1 uF 50 V +80/—20% BCEL811090Z C082 {Electrolytic 2.2 uF 60 V +80/—20% BCEL812290Z Jcoas |Ceramic 0.001 uf 50V +20% YD(D) |eCKD81 10262 C084 [Electrolytic 100 uF 10V +80/—20% BCELI1010Z _| RS | MER'S NO. aaa PART NO.) PART NO. Co8s |Ceramic 100 pF 50 V +5% CH BCCC811014Z |CO86 | Semi-conductor (SR) 0.1 uF 25V +10% BCGCS1 ee }C087 [Electrolytic 10 uF 16 V +80/-20% BCEL31 10007 [Coss |Ceramic 0.001 nF 50 V + 20% YD(D) cxbe 10262 |COB9 |Ceramic 0.047 uF 25 V +80/—20% ZF BCKCS1 4731 }CO90 |— Not Used — }Cog91 }— Not Used — | }ca92 |— Not Used — }CO93 |— Not Used — }Co94 |— Not Used — C095 |Semi-conductor (SR) 0.01 uF 25 V + 10% Eee rar cone 'C096 | Electrolytic 10 uF 16 V +80/—20% cet s1:0002 |C097 | Electrolytic 10 uF 16 V +80/—-20% — Not Used — cose Electrolyte 100 uF 10 V +80/-20% }BCEL111010Z |C100 !— Not Used — C101 |Semi-conductor (SR) 0.1 uF 25. V + 10% socest wossz C102 {Electrolytic 470 uF 10 V +80/—20% Cee aoe C103 |Electrolytic 47 uF 16 V +80/-20% Beis eeaaz C104 {Electrolytic 2.2 uF 50 V +80/—20% ace.s:22907 C105 | Electrolytic 4.7 uF 50 V +80/—20% C106 |— Not Used — Ei emer OEY Ea om sees mic 0.001 uF +20% E108 Estat 0.0047 uF 50 V +80/-20% YF(F) | eee eae 1C110 |— Not Used — | C111 |Semi-conductor (SR) 0.01 wF 25.V + 10% i jecerara7 on C112 | Electrolytic 4.7 uF SOV peo =e % BCCrS 110912 C113 |Ceramic 1 pF SOV > 0.25% cK Bocup tans) C114 |Ceramic 4pF 50 V +0.25% UJ BCeLericoae C115 [Electrolytic 1 uF 50 V +80/-20% pecuelnen! C116 Ceramic 4 pF 50V £0.25' % UJ BCCRS182022: 1C117 |Ceramic 82 pF 50 V +5% RH Becas ated C118 Ceramic 150 pF 50 V +5% RH eereiensiz C119 Ceramic 0.5 pF 50 V +0.25% CK Bocre:soerz C120 |Ceramic 22 pF SOV +5% RH Ecoasiaanae! C121 Ceramic 33 pF 50 V +5% RH penal 1122 |Ceramic 120 pF 50 V +5% RH Bi nat eae }C123 |Ceramic 150 pF 50 V +5% RH |BCCI 1 iI C124 | Ceramic 390 pF 50V +10% SL BCCGB1391 3 C125 | Ceramic 0.047 uF 25 V +80/—20% ZF Eeaicetee’ C126 |Ceramic 0.001 uF 50V +20% YD(D) fBoxbe1 10282 C127 | Electrolytic 0.47 uF 50 V +80/—20% BCEL81478( : \C128 | Ceramic 560 pF 50V +10% SL pcoasieevea 10129 | Ceramic 560 pF 50 V 10% SL BCCGS15615: C130 |Ceramic 0.01 uF 50 V 20% YD(O) BCKD811036Z C131 |Ceramic 820 pF 50 V +10% SL BCCG8182152| C132 Ceramic 0.01 uF 50 V +80/-20% YF(F) IBCKG811030Z| C133 | Electrolytic 2.2 uF 50 V +80/-20% BCEL8122902 10134 |Ceramic 0.001 uF 50 V-+80/-20% YF(F) ‘BCKG8110202| C135 iCeramic 0.001 uF 50V + 20% YD(D) BCKD8110262 -29T | REF. RS MFR'S No. | DESCRIPTION PART NO.| PART NO. c136 \Ceramic 10 pF 60 V +0.5% CH ‘acces 10022! 6137 |Ceramic 0.01 pF 80 V +80/—20% YF(F) |BCKGB11030Z C138 |Ceramic 0.01 uF 50V +20% YD(O) |BCKD811036Z C138 |Ceramic 560 pF 50V =10% SL BCCGB156152| C140 |Ceramic 390 pF 50 V +10% YB(B) BCKBS13915Z C141 |Semi-conductor (SR) 0.0047 uF 25V + 10% | BCGC5147252| IC142 |Ceramic 0.01 uF 50 V +80/—20%:YF(F) BCKGB11030Z 1143 | Ceramic 470 pF 50V +10% SL BCCGB14715Z C144 — Not Used — C145 |Ceramic 0.01 pF 50 V +80/—20% YF(F) ' BCKG811030Z C146 |Ceramic 100 pF 50 V +10% SL | BCCGE110152| [C147 |Ceramic 0.0047 uF 50 V +80/—20% YF(F) BCKG814720Z C148. Semi-conductor (SR) 0.01 uF 25V + 10% | BCGC51 10352 IC149 |— Not Used — C150 | — Not Used — C151 | Ceramic 0.01 pF 50 V +80/—20% YF(F) ]BCKGS11030Z C152 Ceramic 0.001 uF 50V +20% YD(0) BCKD811026Z C153 |Ceramic 0.01 uF 50 V +80/—20% YF(F) BCKG811030Z C154 | Electrolytic 22 uF 10 V +80/-20% BCEL112200Z IC155 | Electrolytic 4.7 UF 80 V +80/—20% BCELB14790Z IC156 |Semi-conductor (SR) 0.01 uF 25 V = 10% BCGCS110352| [C157 |Semi-conductor (SR) 0.01 uF 25 V + 10% ]BCGCS110352| C158 |Semi-conductor (SR) 0.01 nF 25V 10% BCGCS110352| C159 |Semi-conductor (SR) 0.047 uF 25 V + 10% BCGCS147352| 1C160 |Semi-conductor (SR) 0.022 uF 25 V + 10% BCGC5122352 C161 |Semi-conductor (SR) 0.047 uF 25V + 10% BCGC5147352 C162 | Electrolytic 1000 iF 25 V + 20% C-095 BCERS1 10262 C163 [Electrolytic 1000 uF 25 V + 20% C-095 ]BCERS1 1026Z 1164 |— Not Used — C165 |Ceramic 0.01 uF 50 V +80/—20% YF(F) \BckGe110302 C166 |Ceramic 0.01 wF 0 V +80/—20% YF(F) \BCKGE11030Z C167 |Ceramic 0.01 uF 50 V +80/—20% YF(F) [BokGat 10302 DIODES D001 | Silicon 41N6O AM BDAY0001001 D002 | Silicon 1N6O AM BOAY0001001 D003 | Silicon 18133 Taping BDAY0497001 boos | Zener HZ3B3 BDAYO269003| D005 | Silicon 188133 Taping BDAY0497001 1006 | — Not Used — | D007 | Silicon 11N6O AM | BOAYO001001 D008 | Silicon 1N60 AM | BDAY0001001 1D00g | Silicon 1$S133 Taping BDAY0497001 [D010 | Silicon MC-301 BDAY0090001 Dori | Silicon MC-301 BDAY00S0001 D012 | Silicon 188133 Taping BDAY0497001 D013 | Silicon 1§8133 Taping BDAY0497001 Do14 188133 Taping BDAY0497001 D015 | Silicon 1$8133 Taping BDAY0497001 D016 | Silicon 18133 Taping _ BDAY0497001 -2-| MFR'S REF, ) RS No. Leceeiielet | PART NO. PART NO. 10017 Silicon 1$$133 Taping | | ppayoss7001 |D018 | Silicon 1§$133 Taping BDAY0497001 D019 | Silicon 1§$133 Taping BDAY0497001 1D020 | Silicon 1SS133 Taping BDAY0497001 [D021 | Silicon 1$S133 Taping BDAY0497001 D022 | Silicon 188133 Taping BDAY0497001 10023 | Silicon 18S133 Taping BDAY0497001 1024 | Zener HZ5C-1 BDAY0269002| D025 | Silicon 188133 Taping BDAY0497001 1026 | — Not Used — D027 | Silicon 1$$133 Taping BDAY0497001 1D028 | Silicon 1$S133 Taping BDAY0497001 10029 | Silicon 1$S133 Taping BDAY0497001 1D030 | — Not Used — D031 | Silicon 18S133 Taping BDAY0497001 10032 | Silicon 188133 Taping BOAY0497001 1DO33 | Varistor KB-262 BDFY0004002 D034 | Silicon 18S133 Taping BDAY0497001 D035 | Silicon 188133 Taping BDAY0497001 036 | Varistor MV-1YH-S BOFY0058001 D037 | Varistor MV-1YH-S BDFY0058001 D038 | Silicon 1$S133 Taping BDAY0497001 [D039 | Silicon 185133 Taping BDAY0497001 D040 | — Not Used — 1D041 | Silicon 1N4003 BDAY0133001 D042 | Silicon 188133 Taping BDAY0497001 10043 | Silicon 1$S133 Taping BDAY0497001 [D044 | Silicon 1N5401 BDAY0245001 [D045 | Silicon 188133 Taping BDAY0497001 046 | Slicon 188133 Taping BDAY0497001 COILS L001 LB-693 41M7-M(R12H810A) BLBY0693001 Lo02 LB-695 L-2M7-S(R12-H882X) | BLBY0695001 L003 LB-691 41M7-2(R12 H811A) 1 BLBY0691001 L004 LB-691 41M7-2(R12 H811A) BLBY0691001 LOOS LB-691 41M7-2(R12 H811A) BLBY0691001 |LOO6 Inductor Molded LZ-051 SP0305-471K 470 «H BLZY0051471 L007 (8-694 41M7-S(R12-H881A) BLBY0694001 L008 LB-692 41M7-S(R12-H880A) BLBY0692001 L008 | inductor Molded LZ-035 470 wH BLZY0035471 — Not Used — JL011 | Inductor Molded 2-035 470 uH BLZY0035471 Lore | B-689 L-3M7-D3(R12H600X) BLBY0689001 L013 LB-689 L-3M7-D3(R12H600X) | BLBY0689001 Lois LE-096 8 1/2T | | BLEY0096001 Lor UE-092 6 1/2T | BLEY0092001 iat ipa 71/27 | BLEY0093001 L018 Lp-230 BLDY0230001 | BLDY0230001 maeMFR'S 7 T REF.‘ | RS NO. | pean PART NO. PART NO. Lora] \D-221 | sLOY0221001 L020 | LD-229 | BLDY0229001 Lo2t LD-087 BFO4-3°5"1 | BLOY0087001 L022 LD-087 BFO4-3°5"1 BLDY0087001 Lo23 LD-087 BFO4-~ 1 BLDY0087001 L024 LD-228 ATOS02T-3012 BLDY0228001 L025 LE-201 D2.4 31/2T BLEY0201001 L026 Ll LB-692 41M7-S(R12-H880A) 1 BLBY0692001 TRANSISTORS. (Q001 | Silicon, NPN (DB-259 2SC1675-L | BOBC1675111! 1Q002 | Silicon, NPN DB-259 2SC1675-L BDBC1675111' 1Q003 | Silicon, NPN DB-259 2SC1675-L BDBC1675111 1Q004 | Silicon, NPN DB-224 2SC945A-Q BDBC0945507| 1Q005 | Silicon, NPN DB-224 2SC945A-Q BDBC0945507/ 1Q006 | Silicon, PNP DB-027 2SA733A-PB. | BDBA0733541 1Q007 | Silicon, NPN (0B-224 2SC945A-Q. 1 | BDBC0945507| 1Q008 | Silicon, NPN. (DB-224 2SC945A-Q. | BDBC0945507| 1Q009 | — Not Used — 1Q010) —- Not Used — }Q011 | Silicon, NPN DB-224 2SC945A-Q 8D8C0945507| 1Q012 | Silicon, NPN DB-224 2SC945A-Q. | BDBC0945507| }Q013 | Silicon, NPN DB-295 2SC1674-L | BDBC1674111 la014| Field Effect Transistor DC-019 2SK192A-BL \ BDCB0192533} 1Q015 | Silicon, NPN (DB-295 2SC1674-L | i BDBC1674111 1Q016 | Silicon, NPN DB-259 2SC1675-L } BDBC1675111 1Q017 | Silicon, NPN DB-259 2SC1675-L | BD8C1675111 1Q018 | Silicon, NPN. DB-269 2SC1730-L BDBC1730111 1Q019 | Silicon, PNP DB-027 2SA733A-PB | BDBA0733541 0020 | — Not Used — | 1Q021 | Silicon, NPN DB-224 2SC945A-Q BDBC0945507| 1Q022 | Silicon, NPN DB-224 2SC945A-Q BDBC0945507| |Q023 | Silicon, NPN. DB-259 2SC1675-L ‘BDBC1675111) |Q024 | Silicon, NPN DB-383 2SC3242A-E BOBC3242536| 1Q025 | Silicon, PNP DB-027 2SA733A-PB | BDBA0733541 12026 | Silicon, NPN DB-259 2SC1675-L | BOBC1675111 1Q027 | Silicon, NPN DB-383 2SC3242A-E | BDBC3242536} 12028 | Silicon, NPN DB-224 2SC945A-Q BDBC0945507| 1Q029 | Silicon, PNP DB-106 2SB525-E BDBB0S25105} 1Q030 | Silicon, NPN DB-224 2SC945A-Q | ; BDBC0945507) Ja03t | Silicon, NPN DB-224 2SC945A- ‘BDBC0945507 }Q032 | Silicon, NPN DB-224 2SC945A-Q. | BDBC0945507| 1033 | Silicon, NPN DB-272 2SC1973-SSB BOBC1973315| 034 Silicon, NPN DB-228 26C2086-D | BDBC2086104| }2035 | Silicon, NPN DB-224 25C9454- | BDBC0945507 }2036 | Silicon, NEN DB-224 28C945A-Q | 8DBC0945507| }2037 | Silicon, NPN DB-224 2SC945A-0 ! BDBC0945507| }Q038 | Silicon, NPN DB-224 2SC945A-Q BDBC0945507| j2039 | Silicon, NPN B-224 2SC945A-0 8DBC0845507