Taiz University

Al-saeed Faculty for Engineering

and Information Technology
IT Department

Electronic Devices Laboratory Reports

1. Ala,a Slah Morshed

2. Khalil mohmmed
3. Forsan sadiq hassen
4. Omer Amain Hmod
5. Zaid Ali Nasheer

Experiment 1
Supervisor
Eng. Haitham Alboraihi

2023
 Diode Characteristics

Objectives
The purpose of this experiment is to measure and plot the forward and
reverse IV characteristics of a silicon diode, and to measure the DC and AC
(dynamic) resistances of the diode.

Required Parts and Equipments

1- DC Power Supply
2- Digital Multimeters
3-Electronic Test Board
4-Small Signal Silicon Diode 1N4148
5- Resistors, 470 Ω, 1 MΩ
6- Leads and wires

1- Connect the diode circuit shown in Fig.3.

2
 Diode Characteristics

Procedure and results

1. Forward bias.

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Table 1: Recorded data for the forward biasing diode circuit.

I D (mA ) V D (V )
0 0
0.5 0
1 0.63
2 0.64
4 0.65
6 0.66
8 0.67
10 0.67
12 0.68
16 0.69
18 0.695
20 0.7
22 0.71

3
 Diode Characteristics

2. Reverse bias

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Table 1: Recorded data for the forward biasing diode circuit

V R (V ) I R (uA)
0 0
5 0
10 0
15 0
20 0
25 0
.

current in hole circuit

And we prove that no output in reverse contacting
And the diode will be an open circuit and no current
Flood through the circuit.

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4
 Diode Characteristics

Calculations and Discussion

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1-Plot the diode forward characteristics from the results obtained, and determine the cut
in voltage Vγ from the sketch.

the cut in voltage for the diode will start or increase from 0.7

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2-From the sketched characteristic curve determine the static resistance of the diode RDC
at IDQ = 10mA. Determine also the diode dynamic resistance at IDQ = 10mA, and compare
it with the theoretical value obtained from equation 4.

The dynamic resistance at IDQ = 10mA

Vd /ID RD the static resistance of the diode RDC
0 0 at IDQ = 10mA
0.54V / 0.5A 1Ω just equal the last voltage and
0.57V / 1A 0.56 Ω current 0.71v/22A=0.032 Ω.
0.61V / 2A 0.25Ω
0.65V / 4A 0.186Ω

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5
 Diode Characteristics

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3-Plot the diode reverse characteristic, and estimate an approximate value for
the reverse saturation current IS.

The value for the current will be equal to zero because the circuit is considered open
circuit

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4-From the results obtained in this experiment, compute the maximum power
dissipated in the diode
P=VR P=15.6W
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5-Explain how you could use an ohmmeter to identify the cathode of an unmarked diode.

We can use ohmmeter in parallel and connect the positive to the cathode if the sign obtained
is a negative that ensure we determined the cathode
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6
 Diode Characteristics

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6-Explain why a series resistor is necessary when a diode is forward-biased

The resistance reduce the current flowing to diode and the total voltage will go to the
diode , it will be in a parallel with the source with no resistance the current may damage
the diode derictly

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7-In a certain silicon diode, it was found that the diode current is 15mA when the diode
voltage is 0.64V at room temperature. Determine the diode current when the voltage
across It becomes 0.68V. Use the approximate diode characteristic equation.
Frist we find the resistance by using
Vd
Rd=
Id
0.64
Rd=
15
Rd=0.0426KΩ
To find the current where voltage =0.68v
Vd
Id =
Rd
0.68
I= = 15.962 mA
0.0426
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7
 Diode Characteristics

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8-From the approximate diode characteristic equation, derive an expression for the
dynamic resistance rd.
Dynamic resistance (rd) is the ratio of the change in voltage (ΔV) to the change in current
(ΔI) of a diode
Vd
Rd =
Id

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Conclusion
the diode positive side called the anode, and the negative side is called the cathode.
When the diode’s anode is at a higher potential than the cathode, the diode is forward-
biased, and current will flow through the diode from anode to cathode. On the other
hand, if the anode is at a lower potential than the cathode, the diode is said to be reverse-
biased, and only a very small reverse current flows from cathode to anode until break-
down occurs at a very high reverse voltage VBR, and a successive current may flow in the
reverse and voltage of a diode between 0.65v and 0.70v in a foreward base and open
circuit in reverse base.