ELE 241

Electronics I

Department of Electrical Engineering

College of Engineering
American University of Sharjah

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 ELE 241
Electronics I

Lecture 8. Bipolar Junction Transistors (BJTs)

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Learning Objectives

§ BJTs structure and physical operation

§ Current-Voltage characteristics

§ Recommended Reading: Chapter 4.1 and 4.2, Microelectronic Circuits 8th

International Edition, Adel Sedra and Kenneth Smith.

ELE 241 Electronics I | L8 | Learning Objectives 3

Learning Outcomes
Spring 24 Semester

1. Calculate the fundamental characteristics of intrinsic and doped semiconductors.

2. Calculate the physical parameters of a PN junction.
3. Analyze diode circuits.
4. Analyze BJT and MOSFET biasing circuits.
5. Design MOSFET amplifier circuits.
6. Synthesize CMOS logic gate circuits.
7. Analyze CMOS inverter circuits.

ELE 241 Electronics I | L8 | Learning Objectives 4

Learning Outcomes

1. Calculate the electron and hole concentrations in intrinsic and doped semiconductor
materials.
2. Calculate the built-in potential, depletion region width and junction capacitance of a PN
junction.
3. Analyze diode circuits.
4. Describe the BJT structure, operation, and I-V characteristics.
5. Design BJT DC biasing circuits.
6. Describe the MOSFET structure, operation, and I-V characteristics.
7. Analyze MOSFET DC biasing circuits, amplifiers, and CMOS logic gate circuits.
8. Design MOSFET amplifiers and CMOS logic gate circuits.
9. Analyze CMOS inverter circuits.

ELE 241 Electronics I | L8 | Learning Objectives 5

BJTs Structure
§ The BJTs device consists of three layers of semiconductors in a monolithic
structure.
§ The three layers are doped npn or pnp and identified as Emitter (E), Base (B),
and Collector (C).

§ A simplified npn transistor structure: 6.1 Device Structure and Physical Operation 307

Metal
n-type p-type n-type contact

Emitter Base Collector

Emitter Collector
region region region
(E) (C)

Emitter–base Collector–base
junction junction
Base
(EBJ) (CBJ)
(B)

Figure 6.1 A simplified structure of the npn transistor.

ELE 241 Electronics I | L8 | BJTs Structure 6

Metal
contact
 Metal
n-type p-type n-type contact

Emitter Base Collector

Emitter Collector
region region region
(E) (C)

Emitter–base Collector–base
BJTs Structure junction
(EBJ)
Base
junction
(CBJ)
(B)
§ A simplified pnp transistor structure:
Figure 6.1 A simplified structure of the npn transistor.

Metal
contact
p n p
E Emitter Base Collector C
region region region

316
Figure 6.2 A 6simplified
Chapter Bipolarstructure
Junctionof Transistors
the pnp transistor.
(BJTs)
§ Structure of an actual npn transistor:
Table 6.1 BJT Modes of Operation E B C

Mode EBJ CBJ

Cutoff Reverse p Reverse n
Active Forward Reverse
Saturation Forward Forward
n

ELE 241 Electronics I | L8 | BJTs StructureFigure 6.7 Cross section of an npn BJT. 7
6.1.2 Operation of the npn Transistor in the Active Mode
BJTs Circuit Symbols
Circuitand
Circuit Conventions
Symbols
Symbols andand
Conventions
Conventions
§ npn transistor: pnp transistor:

ELE 241 Electronics I | L8 | BJTs Circuit Symbols and Conventions 8

BJTs Physical Operation
§ The transistor consists of two pn junction. 6.1 Device Structure and Physical Operation 307

Metal
n-type p-type n-type contact

Emitter Base Collector

Emitter Collector
region region region
(E) (C)

Emitter–base Collector–base
junction junction
Base
(EBJ) (CBJ)
(B)

Figure 6.1 A simplified structure of the npn transistor.

§ Using the npn transistor as an example: we have the Base-Emitter junction (BE)
and the Base-Collector
Metal junction (BC).
contact
p n p
E Emitter Base Collector C
region region region

ELE 241 Electronics I | L8 | BJTs Physical Operation B 9

BJTs Physical Operation
§ 1. BE junction is forward-biased, and BC junction is reverse-biased. This is often
called the active mode or active region of operation. The transistor function as
an amplifier.

§ 2. BE junction is forward-biased, and BC junction is forward-biased. This

condition is called the saturation mode.

§ 3. BE junction is reverse-biased, and BC junction is reverse-biased. This state is

referred to as the cut-off mode.

§ 4. BE junction is reverse-biased, and BC junction is forward-biased. This

situation is referred to as the reverse-active or inverted mode.

ELE 241 Electronics I | L8 | BJTs Physical Operation 10

BJTs Physical Operation in Active Mode
§ Using npn transistor as an example, the normal state of biasing the transistor
consists of having the BE junction forward-biased, and the BC junction reverse-
biased.
§ In this configuration, the main current flows between the collector and emitter,
while the base terminal provides a tiny current or voltage to control the main
current.

ELE 241 Electronics I | L8 | BJTs Physical Operation in Active Mode 11

BJTs Physical Operation in Active Mode
§ Forward-biasing of the emitter-base reduces the space charge region at the BE
junction and allows electrons to be injected from the heavily doped emitter into
the lightly doped base.
§ In p-type base these are minority carriers. After diffusing to the BC junction,
which is reverse-biased, they are swept through this junction and enter the
collector circuit.
§ Not all of the electrons reach the BC space charge due to recombination with
holes (~1%), and some flow into the base terminal to provide the base current.

§ The ratio of carrier population that reach the collector to those emitted into the
base is denoted 𝛼 (the common-base current gain).
§ The base should be narrow to ensure that most electrons reach the collector.
This results in a large 𝛽, where 𝛽 is the common-emitter current gain.

ELE 241 Electronics I | L8 | BJTs Physical Operation in Active Mode 12

BJTs Physical Operation in Active Mode
§ pnp transistor operation in active mode.

ELE 241 Electronics I | L8 | BJTs Physical Operation in Active Mode 13

BJTs Physical Operation in Saturation and Cutoff
Mode
§ Saturation arises when the BC junction voltage is zero or is forward-biased, such
that injected carriers in the base accumulate and don't get swept to the collector.
§ When both junctions are reverse-biased, all terminal currents are extremely
small and the transistor is said to be off.

ELE 241 Electronics I | L8 | BJTs Physical Operation in Saturation and Cutoff Mode 14
 BJT iv characteristics:
iB = f(vBE) & iC = g(iB , vCE)
Saturation:
BJTs Operations Summary BE is forward biased, BC is forward biased
1. Soft saturation: V, iC iv characteristics:
0.3 vCE 0.7 BJT iB Active:
6.2 Current–Voltage
BE is forward biased Charact
§ For npn transistor (for pnp
2. Deep saturation: 0.1 transistor,
vCE 0.3 V, reverse
iC iB the sign)
3. Near cut-off: i B = f(v BE
vCE 0.1 V, iC 0
) & i C = g(i B , v CE )i
BC is reverse biased
iB
C

BJT iv characteristics:
Saturation:
BE is forward biased, BC is forward biased
1. Soft saturation: 0.3 v 0.7 V, i iB Active:

iB = f(vBE) & iC = g(i

i
B , vCE0.)1 v 0.3 V, i
CE C
B BE is forward biased
2. Deep saturation: CE C iB BC is reverse biased
3. Near cut-off: vCE 0.1 V, iC 0 iC iB
Saturation:
orward biased, BC is forward biased
uration: 0.3 iB Active:
vCE 0.7 V, iC iB
BE is forward biased
aturation: 0.1 vCE 0.3 V, iC iB BC is reverse biased
t-off: vCE 0.1 V, iC 0 iC iB

Cut-off :
BE is reverse biased
iB 0, iC Cut-off
0 :
F. Najmabadi, ECE65, Winter 2012 BE is reverse biased
iB 0, iC 0
F. Najmabadi, ECE65, Winter 2012

Image from [Link]

Figure 6.18 (a) Conceptual circuit for measuring the iC –v CE characteristics of the BJT. (b) The iC –v CE
ELE 241 Electronics I | L8 | BJTs Operations Summary
characteristics of a practical BJT. 15
Cut-off :
Figure 6.14 Graphical representation of the conditions for operating the BJT in the active mo
saturation mode.

Table
BJTs6.2
Current-Voltage Relationships
Summary of the BJT in Active Mode
Current–Voltage Relationships in the Active Mode
6.2 Current–Voltage Cha
v /V
iC = IS e BE T
! "
iC IS v BE /VT
iB = = e
β β
! "
i I
iE = C = S ev BE /VT
α α
Note: For the pnp transistor, replace v BE with v EB .
iE
iC = αiE iB = (1 − α)iE =
β +1
iC = βiB iE = (β + 1)iB
α β
β= α=
1−α β +1
kT
VT = thermal voltage = ≃ 25 mV at room temperature
q
Figure 6.18 (a) Conceptual circuit for measuring the iC –v CE characteristics of the BJT. (b) The iC –v CE
ELE 241 Electronics I | L8 | BJTs Current-Voltage Relationships
characteristics in Active
of a practical BJT. Mode 16
BJTs Large-Signal Models 6.1 Device Structure and Physical Operatio

§ Terminal current equations

dictate that the transistor be
modeled by two circuit
components; one at each
junction; a diode for the BE
junction, and a dependent
current source on the collector
side.
§ The models are shown for an npn
transistor. The signs and arrows
are reversed for a pnp.

Figure 6.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.

ELE 241 Electronics I | L8 | BJTs Large-Signal Models 17

Finally, we note that the models in Fig. 6.5 apply for any positive value of v BE . That is,
BJTs Large-Signal Models
Example 8.1: An npn transistor having IS = 10−15 A and β = 100 is connected as
follows:
§ The emitter is grounded, the base is fed with a constant-current source
supplying a dc current of 10 µA, and the collector is connected to a 5-V dc supply
via a resistance RC of 3 k𝛺.
§ Assuming that the transistor is operating in the active mode, find VBE and VCE.
Use these values to verify active-mode operation.
§ Replace the current source with a resistance connected from the base to the 5-V
dc supply. What resistance value is needed to result in the same operating
conditions?

ELE 241 Electronics I | L8 | BJTs Large-Signal Models – Example 8.1 18

BJTs Large-Signal Models
Example 8.1 cont.:

Answer: VBE = 0.69 V; IC = 1 mA; VCE = 2 V; RB = 431 k𝛺

ELE 241 Electronics I | L8 | BJTs Large-Signal Models – Example 8.1 19

 D6.12 Repeat Example 6.2 for a transistor fabricated in a modern integrated-circuit pro
yields devices that exhibit larger v BE at the same iC because they have much sm
The dc power supplies utilized in modern IC technologies fall in the range of
a circuit similar to that shown in Fig. 6.15 except that now the power supplies
BJT has β = 100 and exhibits v BE of 0.8 V at iC = 1 mA. Design the circuit so th

BJTs Operations Summary flows through the collector and a voltage of +0.5 V appears at the collector.
Ans. RC = 500 !; RE = 338 !
6.13 In the circuit shown in Fig. E6.13, the voltage at the emitter was measured and
Example 8.2: In the circuit shown below, the voltage at the emitter was measured
If β = 50, find IE , IB , IC , and VC .
and found to be –0.7 V.
10 V
§ If β = 50, find IE , IB , IC , and VC .

5k
IC
VC
IB

VE
IE

10 k

10 V Figure E6.13
Answer: 0.93 mA; 18.2 µA; 0.91 mA; +5.45 V
Ans. 0.93 mA; 18.2 µA; 0.91 mA; +5.45 V
ELE 241 Electronics I | L8 | BJTs – Example 8.2 20
BJTs Temperature Effect
§ The iC-vBE characteristic for an npn
transistor.

§ Effect of temperature on the iC-vBE

characteristic. Voltage polarities and current
flow in transistors biased in the active mode.

ELE 241 Electronics I | L8 | BJTs Temperature Effect 21

 The Early Effect
328 Chapter 6 Bipolar Junction Transistors (BJTs)
§ Slopes of the plots in the active
region indicate that iC and 𝛽
increase with increasing Thevlinear
CE. dependence of iC on v CE can be explicitly accounted for by as
remains constant and including the factor (1 + v CE /VA )in the equation for iC as
§ This is caused by the early effect ! "
(base narrowing). v
iC = IS ev BE /VT 1 + CE
§ To visualise this effect, think of VA
each characteristic as being an
The nonzero slope of the iC –v CE straight lines indicates that the output resis
extension of rays originating from
a common point on into
thethenegative
collector is not infinite. Rather, it is finite and defined by
nsistors (BJTs) # %−1
CE voltage axis. $
∂iC $$
ro ≡
§ This point, called the Early voltage, ∂v CE $v = constant
pendence ofViC, on v been candefined
be explicitly
suchaccounted for by assuming that IS
A has CE that: BE

and including the factor (1 + v CEUsing the (6.18)

/VA )inEq. equation
wefor as follows:
caniC show that
! "
v V + VCE
iC = IS ev BE /VT 1 + CE ro = A
(6.18)
VA IC
where I and V are the coordinates of the point at which the BJT is operating on
e of the iC –v CE straight lines indicates Cthat theCEoutput resistance looking
i –v 8.2curve (i.e., the curve obtained for v BE equal to constant value22VBE at wh
ELE 241 Electronics I | L8 | BJTs – Example
is not infinite. Rather, it is finite Cand CE defined by
is evaluated). Alternatively, we can write
BJTs Modified Large-Signal Models
Example: 8.3: Consider the circuit shown below. At VCE= 1 V, VBE is adjusted to
yield a collector current of 1 mA. Then, while VBE is kept constant, VCE is raised to
11V. 6.2 Current–Voltage Characteristics 3
§ Find the new value of IC. For this transistor, VA =100V.

Answer: 1.1 mA

ELE 241 Electronics I | L8 | BJTs Modified Large-Signal Models 23

BJTs Modified Large-Signal Models
§ Large-signal equivalent-circuit models of an npn BJT operating in the active
mode in the common-emitter configuration with the output resistance ro
included.

ELE 241 Electronics I | L8 | BJTs Modified Large-Signal Models 24

BJTs Common-Emitter Characteristics
Example 8.4: For the circuit shown below, it is required to
determine the value of the voltage VBB that results in the
transistor operating
§ (a) in the active mode with VCE = 5 V
§ (b) at the edge of saturation
§ (c) deep in saturation with βforced = 10
§ Assume that VBE remains constant at 0.7 V.
§ The transistor β is specified to be 50.

Answer: a) 1.7 V; b) 2.64 V; c) 10.5 V

ELE 241 Electronics I | L8 | BJTs Modified Large-Signal Models 25

 ELE 241
Electronics I

End of Lecture 8. Bipolar Junction Transistors

(BJTs)
Some materials/figures in this presentation are adapted/taken from (with permission):
Microelectronic Circuits 8th International Edition. By Adel Sedra and Kenneth Smith,
Lecture notes from Dr. Oualid Hammi, Dr. Lufti Albasha, and Dr. Alex Hariz,
and Other online resources.

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