ZXTP2012A

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE

SUMMARY
BVCEO = -60V : RSAT = 38m ; IC = -3.5A

DESCRIPTION
Packaged in the E-line outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.

FEATURES
• 3.5 amps continuous current E-line

• Up to 15 amps peak current

APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Power switches
• Motor control

ORDERING INFORMATION
DEVICE QUANTITY PER REEL

ZXTP2012ASTOA 2,000 units / reel PINOUT

DEVICE MARKING
ZXT
P20
12

TOP VIEW

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ZXTP2012A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV CBO -100 V
Collector-emitter voltage BV CEO -60 V
Emitter-base voltage BV EBO -7 V
Continuous collector current (a) IC -3.5 A
Peak pulse current I CM -15 A
Practical power dissipation at T A =25°C (a) PD 1.0 W
Linear derating factor 8 mW/°C
Power dissipation at T A =25°C (b) PD 0.71 W
Linear derating factor 5.7 mW/°C
Operating and storage temperature range T j , T stg -55 to 150 °C

THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT

Junction to ambient (a) R ⍜JA 125 °C/W

Junction to ambient (b) R ⍜JA 175 °C/W

NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b) For a device mounted in a socket in still air conditions. Collector lead length 10mm.

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CHARACTERISTICS

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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV CBO -100 -120 V I C =-100␮A
Collector-emitter breakdown voltage BV CER -100 -120 V I C =-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BV CEO -60 -80 V I C =-10mA*
Emitter-base breakdown voltage BV EBO -7 -8.1 V I E =-100␮A
Collector cut-off current I CBO ⬍1 -20 nA V CB =-80V
-0.5 ␮A VCB=-80V, Tamb=100⬚C
Collector cut-off current I CER ⬍1 -20 nA V CB =-80V
Rⱕ1k⍀ -0.5 ␮A VCB=-80V, Tamb=100⬚C
Emitter cut-off current I EBO ⬍1 -10 nA V EB =-6V
Collector-emitter saturation voltage V CE(SAT) -14 -20 mV I C =-0.1A, I B =-10mA*
-50 -65 mV IC=-1A, IB=-100mA*
-80 -115 mV IC=-2A, IB=-200mA*
-145 -210 mV IC=-4A, IB=-400mA*
Base-emitter saturation voltage V BE(SAT) -960 -1060 mV I C =-4A, I B =-400mA*
Base-emitter turn-on voltage V BE(ON) -850 -960 mV I C =-4A, V CE =-1V*
Static forward current transfer ratio h FE 100 250 I C =-10mA, V CE =-1V*
100 200 300 IC=-1A, VCE=-1V*
65 120 IC=-4A, VCE=-1V*
10 25 IC=-10A, VCE=-1V*
Transition frequency fT 120 MHz I C =-100mA, VCE =-10V
f=50MHz
Output capacitance C OBO 48 pF V CB =-10V, f=1MHz*
Switching times t ON 39 ns I C =-1A, V CC =-10V,
t OFF 370 I B1 =I B2 =-100mA

* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.

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TYPICAL CHARACTERISTICS

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PACKAGE OUTLINE

Controlling dimensions are in millimeters. Approximate conversions are given in inches

PACKAGE DIMENSIONS
Millimeters Inches
DIM
Min Max Min Max

A 0.41 0.495 0.016 0.0195

B 0.41 0.495 0.016 0.0195

C 3.61 4.01 0.142 0.158

D 4.37 4.77 0.172 0.188

E 2.16 2.41 0.085 0.095

F — 2.50 — 0.098

G 1.27 NOM 0.050 NOM

L 13.00 13.97 0.512 0.550

© Zetex Semiconductors plc 2005

Zetex GmbH Zetex Inc Zetex (Asia) Ltd Zetex Semiconductors plc
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