Si4403DDY

[Link]
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
SO-8 Single FEATURES
D • TrenchFET® Gen III p-channel power MOSFET
D 5
D 6 • 1.8 V rated RDS(on)
D 7
8
• 100% Rg tested
• Material categorization: 
for definitions of compliance please see
[Link]/doc?99912
4
3 G
2 S APPLICATIONS S
1 S • Adapter switch
S
Top View • Load switch
PRODUCT SUMMARY • DC/DC converters G
VDS (V) -20 • High speed switching
RDS(on) max. () at VGS = -4.5 V 0.0140 • Power management in
RDS(on) max. () at VGS = -2.5 V 0.0200 battery-operated, mobile and
RDS(on) max. () at VGS = -1.8 V 0.0300 wearable devices P-Channel MOSFET
Qg typ. (nC) 39 D
ID (A) -15.4 e
Configuration Single

ORDERING INFORMATION
Package SO-8
Lead (Pb)-free and halogen-free Si4403DDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -20
V
Gate-source voltage VGS ±8
TC = 25 °C -15.4 e
TC = 70 °C -12.3
Continuous drain current (TJ = 150 °C) ID
TA =25 °C -10.9 b, c
TA = 70 °C -8.7 b, c A
Pulsed drain current (t = 100 μs) IDM -32 a
TC = 25 °C -4.2
Continuous source-drain diode current IS
TA = 70 °C -2 b, c
TC = 25 °C 5
TC = 70 °C 3.2
Maximum power dissipation PD W
TA = 25 °C 2.4 b, c
TA = 70 °C 1.5 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150
°C
Soldering recommendations (peak temperature) 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t  10 s RthJA 41 52
°C/W
Maximum junction-to-foot (drain) Steady state RthJF 20 25
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 100 °C/W
e. TC = 25 °C

S17-0318-Rev. A, 27-Feb-17 1 Document Number: 70094

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Si4403DDY
[Link]
Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -20 - - V
VDS temperature coefficient VDS/TJ - -12.5 -
ID = -250 μA mV/°C
VGS(th) temperature coefficient VGS(th)/TJ - 26.5 -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -0.4 - -1 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA
VDS = -20 V, VGS = 0 V - - -1
Zero gate voltage drain current IDSS μA
VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10
On-state drain current a ID(on) VDS  -5 V, VGS = 0 V -5 - - A
VGS = -4.5 V, ID = -9 A - 0.0105 0.0140
Drain-source on-state resistance a RDS(on) VGS = -2.5 V, ID = -6 A - 0.0140 0.0200 
VGS = -1.8 V, ID = -3 A - 0.0190 0.0300
Forward transconductance a gfs VDS = -10 V, ID = -9 A - 45 - S
Dynamic b
Input capacitance Ciss - 3250 -
Output capacitance Coss VDS = -10 V, VGS = 0 V, f = 1 MHz - 340 - pF
Reverse transfer capacitance Crss - 325 -
VDS = -10 V, VGS = -8 V, ID = -5 A - 66 99
Total gate charge Qg
VDS = -10 V, VGS = -4.5 V, ID = -5 A - 39 59
nC
Gate-source charge Qgs - 3.7 -
VDS = -10 V, VGS = -4.5 V, ID = -5 A
Gate-drain charge Qgd - 7.9 -
Gate resistance Rg f = 1 MHz 0.7 3.7 7.4 
Turn-on delay time td(on) - 21 40
Rise time tr VDD = -10 V, RL = 2 , ID  -5 A, - 25 50
Turn-off delay time td(off) VGEN = -4.5 V, Rg = 1  - 70 140
Fall time tf - 24 50
ns
Turn-on delay time td(on) - 9 20
Rise time tr VDD = -10 V, RL = 2 , ID  -5 A, - 18 35
Turn-off delay time td(off) VGEN = -8 V, Rg = 1  - 74 150
Fall time tf - 20 40
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - -5.2
A
Pulse diode forward current ISM - - -32
Body diode voltage VSD IS = -5 A, VGS = 0 V - -0.8 -1.2 V
Body diode reverse recovery time trr - 31 60 ns
Body diode reverse recovery charge Qrr - 20 40 nC
IF = -5 A, dI/dt = 100 A/μs, TJ = 25 °C
Reverse recovery fall time ta - 12 -
ns
Reverse recovery rise time tb - 19 -
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S17-0318-Rev. A, 27-Feb-17 2 Document Number: 70094

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Si4403DDY
[Link]
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

50 10000 50 10000
VGS = 5 V thru 2.5 V
VGS = 2 V
40 40
ID - Drain Current (A)

ID - Drain Current (A)

1000 1000
30 30

2nd line

2nd line
1st line

1st line
2nd line

2nd line
TC = 25 °C
20 20
100 100
VGS = 1.5 V
10 10 TC = 125 °C

TC = -55 °C
0 10 0 10
0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line

Output Characteristics Transfer Characteristics

Axis Title Axis Title

0.05 10000 5000 10000
RDS(on) - On-Resistance (Ω)

0.04 4000
C - Capacitance (pF)

VGS = 1.8 V Ciss

1000 1000
0.03 3000
2nd line

2nd line
1st line

1st line
2nd line
2nd line

0.02 2000
VGS = 2.5 V 100 100

0.01 1000
Coss
VGS = 4.5 V
Crss
0 10 0 10
0 10 20 30 40 50 0 5 10 15 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
2nd line 2nd line

On-Resistance vs. Drain Current and Gate Voltage Capacitance

Axis Title Axis Title

8 10000 1.5 10000
RDS(on) - On-Resistance (Normalized)

ID = 9 A VGS = 4.5 V
1.4
VGS - Gate-to-Source Voltage (V)

ID = 5 A
VGS = 2.5 V
6 1.3
VDS = 10 V 1000 1000
VDS = 16 V 1.2
VGS = 1.8V
2nd line

2nd line
1st line

1st line
2nd line

2nd line

4 1.1
VDS = 5 V 1.0
100 100
2 0.9

0.8

0 10 0.7 10
0 20 40 60 80 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
2nd line 2nd line

Gate Charge On-Resistance vs. Junction Temperature

S17-0318-Rev. A, 27-Feb-17 3 Document Number: 70094

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Si4403DDY
[Link]
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

100 10000 0.04 10000

ID = 9 A

RDS(on) - On-Resistance (Ω)

IS - Source Current (A)

TJ = 150 °C 0.03
10 1000 1000

2nd line
TJ = 25 °C

1st line

2nd line
2nd line

1st line
2nd line
0.02
TJ = 150 °C
1 100 100
0.01
TJ = 25 °C

0.1 10 0 10
0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Axis Title Axis Title

0.8 10000 100 10000

0.7
80
VGS(th) (V)

0.6
2nd line

1000 1000
Power (W)

60
2nd line

2nd line
0.5
2nd line
1st line

1st line
0.4
40
ID = 250 μA
100 100
0.3
20
0.2

0.1 10 0 10
-50 -25 0 25 50 75 100 125 150 0.0001 0.001 0.01 0.1 1 10 100 1000
TJ - Temperature (°C) Time (s)
2nd line 2nd line

Threshold Voltage Single Pulse Power, Junction-to-Ambient

Axis Title
100 (1)
10000
Limited by RDS(on)

10 100 μs
ID - Drain Current (A)

1000
1 ms
2nd line
1st line
2nd line

1 10 ms
100 ms
1s 100
0.1 10 s
DC
TA = 25 °C
Single pulse
0.01 10
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

S17-0318-Rev. A, 27-Feb-17 4 Document Number: 70094

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Si4403DDY
[Link]
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

20 10000 6 10000

5
15
ID - Drain Current (A)

1000 4 1000
Package limited

Power (W)
2nd line

2nd line
2nd line
1st line

1st line
2nd line

10 3

100 2 100
5
1

0 10 0 10
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TF - Foot Temperature (°C) TF - Foot Temperature (°C)
2nd line 2nd line

Current Derating a Power, Junction-to-Foot

Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.

S17-0318-Rev. A, 27-Feb-17 5 Document Number: 70094

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Si4403DDY
[Link]
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title
1 10000
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

Notes: 1000
0.1

2nd line
1st line
PDM
0.1
0.05 t1
t2
t 100
0.02 1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA (t)

Single pulse 4. Surface mounted

0.01 10
0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Ambient

Axis Title
1 10000
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

1000
0.1

2nd line
1st line
0.1 0.05

0.02
100

Single pulse

0.01 10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Foot


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






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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see [Link]/ppg?70094.

S17-0318-Rev. A, 27-Feb-17 6 Document Number: 70094

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 [Link]

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

[Link] Document Number: 72606

22 Revision: 21-Jan-08
 Legal Disclaimer Notice
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Revision: 01-Jan-2023 1 Document Number: 91000