Transistors

2SC2631
Silicon NPN epitaxial planar type

For low-frequency high breakdown voltage amplification Unit: mm

Complementary to 2SA1123 5.0±0.2 4.0±0.2

5.1±0.2
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
• High collector-emitter voltage (Base open) VCEO

0.7±0.2
0.7±0.1
• Small collector output capacitance (Common base, input open cir-

12.9±0.5
cuited) Cob

ue e/
■ Absolute Maximum Ratings Ta = 25°C
0.45+0.15
–0.1 0.45+0.15
–0.1
Parameter Symbol Rating Unit

tin nc 2.5+0.6 2.5+0.6

e)
–0.2 –0.2

d
typ
Collector-base voltage (Emitter open) VCBO 150 V
1: Emitter

d
on e.
Collector-emitter voltage (Base open) VCEO 150 V 1 2 3

ue
isc ag
2: Collector

±0.2

tin
, d st
Emitter-base voltage (Collector open) VEBO 5 V
on na

ed cle2.3
3: Base
EIAJ: SC-43A
Collector current IC 50 mA

yp cy
TO-92-B1 Package

d t ife
Peak collector current ICP 100 mA

ue t l
tin uc
Collector power dissipation PC 750 mW
sc te

on rod
Junction temperature Tj 150 °C
isc r P
d d fou

Storage temperature Tstg −55 to +150 °C

Di ain

ne ng
pla wi
e, ollo

■ Electrical Characteristics Ta = 25°C ± 3°C

typ s f
ce de
an clu

Parameter Symbol Conditions Min Typ Max Unit

en in
M

IC = 100 µA, IB = 0
int ed

Collector-emitter voltage (Base open) VCEO 150 V

ma inu

Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V

e, ont

Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 1 µA

typ isc
ce /D

Forward current transfer ratio * hFE VCE = 5 V, IC = 10 mA 130 330 

an ce
en an

Collector-emitter saturation voltage VCE(sat) IC = 30 mA, IB = 3 mA 1 V

int ten

Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz 160 MHz

ma ain

VCB = 10 V, IE = 0, f = 1 MHz
M

Collector output capacitance Cob 3 pF

(Common base, input open circuited)
ed

Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 150 300 mV

lan

Rg = 100 kΩ, Function = FLAT

(p

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S
hFE 130 to 220 185 to 330

Publication date: March 2003 SJC00117BED 1

2SC2631

PC  Ta IC  VBE VCE(sat)  IC
1.0 120 100
IC / IB = 10

Collector-emitter saturation voltage VCE(sat) (V)

VCE = 10 V

25°C
Collector power dissipation PC (W)

100
0.8

Collector current IC (mA)

10
Ta = 75°C −25°C
80
0.6

60 1

0.4 Ta = 75°C
25°C
40

0.1 −25°C
0.2
20

0 0 0.01
0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100

ue e/
Ambient temperature Ta (°C) Base-emitter voltage VBE (V) Collector current IC (mA)

tin nc

e)
hFE  IC fT  I E Cob  VCB

d
typ
600 300 5

d
VCB = 10 V

on e.
C (pF)
VCE = 10 V IE = 0

ue
f = 200 MHz

isc ag
f = 1 MHz

tin
Ta = 25°C

, d st
ob
Ta = 25°C
on na
500 250
Forward current transfer ratio hFE

ed cle
Transition frequency f (MHz)

circuited)

yp cy
d t ife
400 200
T

ue t l
3

tin oduc
isc capacitance
oninputPropen
sc te

300 Ta = 75°C 150

25°C
r

−25°C 2
d d fou
(Common base,

200 100
Collector output
Di ain

ne ng
pla wi

1
e, ollo

100 50
typ s f
ce de

0 0 0
an clu

0.1 1 10 100 −1 −10 −100 1 10 100

en in
M

Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V)
int ed
ma inu
e, ont
typ isc
ce /D
an ce
en an
int ten
ma ain
ed M
lan
(p

2 SJC00117BED
 Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

ue e/
Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

tin nc
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

e)
d
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

yp
defect which may arise later in your equipment.

dt
on e.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

ue
isc ag
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

tin
, d st
on na
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

ed cle
yp cy
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

d t ife
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

ue t l
tin uc
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
sc te

on rod
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
isc r P

Electric Industrial Co., Ltd.

d d fou
Di ain

ne ng
pla wi
e, ollo
typ s f
ce de
an clu
en in
M

int ed
ma inu
e, ont
typ isc
ce /D
an ce
en an
int ten
ma ain
ed M
lan
(p